FR2246067A1 - Deposition of hetero-epitaxial layers from liq. phase - rough surface on substrate bridges difference in lattice spacings - Google Patents

Deposition of hetero-epitaxial layers from liq. phase - rough surface on substrate bridges difference in lattice spacings

Info

Publication number
FR2246067A1
FR2246067A1 FR7428513A FR7428513A FR2246067A1 FR 2246067 A1 FR2246067 A1 FR 2246067A1 FR 7428513 A FR7428513 A FR 7428513A FR 7428513 A FR7428513 A FR 7428513A FR 2246067 A1 FR2246067 A1 FR 2246067A1
Authority
FR
France
Prior art keywords
deposition
difference
rough surface
liq
hetero
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7428513A
Other languages
English (en)
French (fr)
Other versions
FR2246067B3 (nl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2246067A1 publication Critical patent/FR2246067A1/fr
Application granted granted Critical
Publication of FR2246067B3 publication Critical patent/FR2246067B3/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Weting (AREA)
FR7428513A 1973-08-21 1974-08-20 Deposition of hetero-epitaxial layers from liq. phase - rough surface on substrate bridges difference in lattice spacings Granted FR2246067A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7311470A NL7311470A (nl) 1973-08-21 1973-08-21 Werkwijze voor het neerslaan van een epitaxiale

Publications (2)

Publication Number Publication Date
FR2246067A1 true FR2246067A1 (en) 1975-04-25
FR2246067B3 FR2246067B3 (nl) 1977-06-10

Family

ID=19819436

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7428513A Granted FR2246067A1 (en) 1973-08-21 1974-08-20 Deposition of hetero-epitaxial layers from liq. phase - rough surface on substrate bridges difference in lattice spacings

Country Status (6)

Country Link
JP (1) JPS5051668A (nl)
BE (1) BE818985A (nl)
DE (1) DE2438588A1 (nl)
FR (1) FR2246067A1 (nl)
IT (1) IT1020026B (nl)
NL (1) NL7311470A (nl)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2426496A1 (fr) * 1978-05-23 1979-12-21 Massachusetts Inst Technology Procede d'amelioration des caracteristiques epitaxiales et produits obtenus selon le procede
EP1605498A1 (en) * 2004-06-11 2005-12-14 S.O.I. Tec Silicon on Insulator Technologies S.A. A method of manufacturing a semiconductor wafer

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961997A (en) * 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
US4333792A (en) * 1977-01-03 1982-06-08 Massachusetts Institute Of Technology Enhancing epitaxy and preferred orientation
US4174422A (en) * 1977-12-30 1979-11-13 International Business Machines Corporation Growing epitaxial films when the misfit between film and substrate is large
US5122223A (en) * 1979-05-29 1992-06-16 Massachusetts Institute Of Technology Graphoepitaxy using energy beams
US5156995A (en) * 1988-04-01 1992-10-20 Cornell Research Foundation, Inc. Method for reducing or eliminating interface defects in mismatched semiconductor epilayers
JP2642031B2 (ja) * 1992-05-19 1997-08-20 住友電気工業株式会社 化合物半導体の液相エピタキシャル成長方法及び化合物半導体単結晶基板

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2426496A1 (fr) * 1978-05-23 1979-12-21 Massachusetts Inst Technology Procede d'amelioration des caracteristiques epitaxiales et produits obtenus selon le procede
EP1605498A1 (en) * 2004-06-11 2005-12-14 S.O.I. Tec Silicon on Insulator Technologies S.A. A method of manufacturing a semiconductor wafer
US7138325B2 (en) 2004-06-11 2006-11-21 S.O.I.Tec Silicon On Insulator Technologies S.A. Method of manufacturing a wafer

Also Published As

Publication number Publication date
BE818985A (fr) 1975-02-19
JPS5051668A (nl) 1975-05-08
FR2246067B3 (nl) 1977-06-10
NL7311470A (nl) 1975-02-25
IT1020026B (it) 1977-12-20
DE2438588A1 (de) 1975-02-27

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Legal Events

Date Code Title Description
ST Notification of lapse