FR2235482A1 - Eliminating interface states in MIOS structures - at low temp to avoid degradation of electrical props - Google Patents

Eliminating interface states in MIOS structures - at low temp to avoid degradation of electrical props

Info

Publication number
FR2235482A1
FR2235482A1 FR7416726A FR7416726A FR2235482A1 FR 2235482 A1 FR2235482 A1 FR 2235482A1 FR 7416726 A FR7416726 A FR 7416726A FR 7416726 A FR7416726 A FR 7416726A FR 2235482 A1 FR2235482 A1 FR 2235482A1
Authority
FR
France
Prior art keywords
interface states
mios
structures
substrate
low temp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7416726A
Other languages
English (en)
French (fr)
Other versions
FR2235482B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to FR7416726A priority Critical patent/FR2235482A1/fr
Publication of FR2235482A1 publication Critical patent/FR2235482A1/fr
Application granted granted Critical
Publication of FR2235482B1 publication Critical patent/FR2235482B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10W74/43—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—

Landscapes

  • Formation Of Insulating Films (AREA)
FR7416726A 1974-05-07 1974-05-07 Eliminating interface states in MIOS structures - at low temp to avoid degradation of electrical props Granted FR2235482A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7416726A FR2235482A1 (en) 1974-05-07 1974-05-07 Eliminating interface states in MIOS structures - at low temp to avoid degradation of electrical props

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7416726A FR2235482A1 (en) 1974-05-07 1974-05-07 Eliminating interface states in MIOS structures - at low temp to avoid degradation of electrical props

Publications (2)

Publication Number Publication Date
FR2235482A1 true FR2235482A1 (en) 1975-01-24
FR2235482B1 FR2235482B1 (enExample) 1976-12-24

Family

ID=9138828

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7416726A Granted FR2235482A1 (en) 1974-05-07 1974-05-07 Eliminating interface states in MIOS structures - at low temp to avoid degradation of electrical props

Country Status (1)

Country Link
FR (1) FR2235482A1 (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1603354A (enExample) * 1967-08-02 1971-04-13

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1603354A (enExample) * 1967-08-02 1971-04-13

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
UE US "JOURNAL OF THE ELECTROCHEMICAL SOCIETY", VOLUME 116, NO. 11, NOVEMBRE 1969, "ANNEALING MECHANIST IN RADIATION DAMAGED MNOS STRUCTURES",J.J. TENTOR, ABSTRACT 233, PAGE 337C) *

Also Published As

Publication number Publication date
FR2235482B1 (enExample) 1976-12-24

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Legal Events

Date Code Title Description
ST Notification of lapse