FR2235482A1 - Eliminating interface states in MIOS structures - at low temp to avoid degradation of electrical props - Google Patents

Eliminating interface states in MIOS structures - at low temp to avoid degradation of electrical props

Info

Publication number
FR2235482A1
FR2235482A1 FR7416726A FR7416726A FR2235482A1 FR 2235482 A1 FR2235482 A1 FR 2235482A1 FR 7416726 A FR7416726 A FR 7416726A FR 7416726 A FR7416726 A FR 7416726A FR 2235482 A1 FR2235482 A1 FR 2235482A1
Authority
FR
France
Prior art keywords
interface states
mios
structures
substrate
low temp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7416726A
Other languages
English (en)
French (fr)
Other versions
FR2235482B1 (Direct
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to FR7416726A priority Critical patent/FR2235482A1/fr
Publication of FR2235482A1 publication Critical patent/FR2235482A1/fr
Application granted granted Critical
Publication of FR2235482B1 publication Critical patent/FR2235482B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)
FR7416726A 1974-05-07 1974-05-07 Eliminating interface states in MIOS structures - at low temp to avoid degradation of electrical props Granted FR2235482A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7416726A FR2235482A1 (en) 1974-05-07 1974-05-07 Eliminating interface states in MIOS structures - at low temp to avoid degradation of electrical props

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7416726A FR2235482A1 (en) 1974-05-07 1974-05-07 Eliminating interface states in MIOS structures - at low temp to avoid degradation of electrical props

Publications (2)

Publication Number Publication Date
FR2235482A1 true FR2235482A1 (en) 1975-01-24
FR2235482B1 FR2235482B1 (Direct) 1976-12-24

Family

ID=9138828

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7416726A Granted FR2235482A1 (en) 1974-05-07 1974-05-07 Eliminating interface states in MIOS structures - at low temp to avoid degradation of electrical props

Country Status (1)

Country Link
FR (1) FR2235482A1 (Direct)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1603354A (Direct) * 1967-08-02 1971-04-13

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1603354A (Direct) * 1967-08-02 1971-04-13

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
UE US "JOURNAL OF THE ELECTROCHEMICAL SOCIETY", VOLUME 116, NO. 11, NOVEMBRE 1969, "ANNEALING MECHANIST IN RADIATION DAMAGED MNOS STRUCTURES",J.J. TENTOR, ABSTRACT 233, PAGE 337C) *

Also Published As

Publication number Publication date
FR2235482B1 (Direct) 1976-12-24

Similar Documents

Publication Publication Date Title
ES466901A1 (es) Un metodo para formar aislamiento dielectrico total en una estructura de silicio.
JPS5275989A (en) Production of semiconductor device
CA1029475A (en) Semiconductor device having a passivation layer consisting of silicon and oxygen, and method of manufacturing the same
GB1469436A (en) Process for producing semiconductor devices
GB1382936A (en) Integrated circuit fabrication method
GB1266002A (Direct)
GB1456750A (en) Field effect transistors
FR2235482A1 (en) Eliminating interface states in MIOS structures - at low temp to avoid degradation of electrical props
GB1492447A (en) Semiconductor devices
GB1145879A (en) Semiconductor device fabrication
GB1308764A (en) Production of semiconductor components
JPS57199227A (en) Manufacture of semiconductor device
GB1315573A (en) Formation of openings in insulating layers in mos semiconductor devices
JPS56125847A (en) Surface treatment of semiconductor
GB1264059A (en) Improved dielectric structure for semiconductor device
JPS58103122A (ja) 化合物半導体装置の製造方法
GB1142405A (en) Method of making a semiconductor device having two insulating coatings
JPS5320862A (en) Production of semiconductor device
JPS5552275A (en) Junction field effect transistor
JPS5633840A (en) Manufacture of semiconductor device
JPS5645051A (en) Manufacture of semiconductor device
JPS6459858A (en) Manufacture of semiconductor device
JPS5354972A (en) Production of semiconductor device
JPS57204166A (en) Manufacture of semiconductor device
JPS6424456A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
ST Notification of lapse