FR2200635A1 - - Google Patents
Info
- Publication number
- FR2200635A1 FR2200635A1 FR7334157A FR7334157A FR2200635A1 FR 2200635 A1 FR2200635 A1 FR 2200635A1 FR 7334157 A FR7334157 A FR 7334157A FR 7334157 A FR7334157 A FR 7334157A FR 2200635 A1 FR2200635 A1 FR 2200635A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
- H01L21/82285—Complementary vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/098—Layer conversion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47095341A JPS5942463B2 (ja) | 1972-09-22 | 1972-09-22 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2200635A1 true FR2200635A1 (US20110105765A1-20110505-C00013.png) | 1974-04-19 |
| FR2200635B1 FR2200635B1 (US20110105765A1-20110505-C00013.png) | 1978-11-10 |
Family
ID=14134981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7334157A Expired FR2200635B1 (US20110105765A1-20110505-C00013.png) | 1972-09-22 | 1973-09-24 |
Country Status (8)
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2309040A1 (fr) * | 1975-04-22 | 1976-11-19 | Tokyo Shibaura Electric Co | Circuit integre comportant un transistor vertical a base epitaxiale |
| FR2581796A1 (fr) * | 1985-05-09 | 1986-11-14 | Sgs Microelettronica Spa | Circuit integre bipolaire comprenant des transistors pnp verticaux avec collecteur sur le substrat, et procede pour la realisation d'un tel circuit |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4146905A (en) * | 1974-06-18 | 1979-03-27 | U.S. Philips Corporation | Semiconductor device having complementary transistor structures and method of manufacturing same |
| CA1047652A (en) * | 1975-07-31 | 1979-01-30 | National Semiconductor Corporation | Monolithic integrated circuit transistor having very low collector resistance |
| US4013484A (en) * | 1976-02-25 | 1977-03-22 | Intel Corporation | High density CMOS process |
| US4168997A (en) * | 1978-10-10 | 1979-09-25 | National Semiconductor Corporation | Method for making integrated circuit transistors with isolation and substrate connected collectors utilizing simultaneous outdiffusion to convert an epitaxial layer |
| JPS55153365A (en) * | 1979-05-17 | 1980-11-29 | Toshiba Corp | Manufacturing method of semiconductor device |
| US4274891A (en) * | 1979-06-29 | 1981-06-23 | International Business Machines Corporation | Method of fabricating buried injector memory cell formed from vertical complementary bipolar transistor circuits utilizing mono-poly deposition |
| JPS5750473A (en) * | 1980-09-11 | 1982-03-24 | Nec Corp | Semiconductor integrated circuit device |
| KR900001267B1 (ko) * | 1983-11-30 | 1990-03-05 | 후지쓰 가부시끼가이샤 | Soi형 반도체 장치의 제조방법 |
| US4936928A (en) * | 1985-11-27 | 1990-06-26 | Raytheon Company | Semiconductor device |
| US5014107A (en) * | 1987-07-29 | 1991-05-07 | Fairchild Semiconductor Corporation | Process for fabricating complementary contactless vertical bipolar transistors |
| US5023194A (en) * | 1988-02-11 | 1991-06-11 | Exar Corporation | Method of making a multicollector vertical pnp transistor |
| US4902633A (en) * | 1988-05-09 | 1990-02-20 | Motorola, Inc. | Process for making a bipolar integrated circuit |
| US5159429A (en) * | 1990-01-23 | 1992-10-27 | International Business Machines Corporation | Semiconductor device structure employing a multi-level epitaxial structure and method of manufacturing same |
| US5061652A (en) * | 1990-01-23 | 1991-10-29 | International Business Machines Corporation | Method of manufacturing a semiconductor device structure employing a multi-level epitaxial structure |
| DE69232348T2 (de) * | 1991-09-24 | 2002-08-14 | Matsushita Electric Industrial Co., Ltd. | Integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung |
| US5623159A (en) * | 1994-10-03 | 1997-04-22 | Motorola, Inc. | Integrated circuit isolation structure for suppressing high-frequency cross-talk |
| US5633180A (en) * | 1995-06-01 | 1997-05-27 | Harris Corporation | Method of forming P-type islands over P-type buried layer |
| JP5048242B2 (ja) * | 2005-11-30 | 2012-10-17 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3449643A (en) * | 1966-09-09 | 1969-06-10 | Hitachi Ltd | Semiconductor integrated circuit device |
| FR1559608A (US20110105765A1-20110505-C00013.png) * | 1967-06-30 | 1969-03-14 | ||
| US3638079A (en) * | 1970-01-28 | 1972-01-25 | Sylvania Electric Prod | Complementary semiconductor devices in monolithic integrated circuits |
-
1972
- 1972-09-22 JP JP47095341A patent/JPS5942463B2/ja not_active Expired
-
1973
- 1973-09-18 US US398398A patent/US3912555A/en not_active Expired - Lifetime
- 1973-09-19 GB GB4392273A patent/GB1444633A/en not_active Expired
- 1973-09-21 CA CA181,671A patent/CA1011467A/en not_active Expired
- 1973-09-21 DE DE19732347745 patent/DE2347745A1/de active Pending
- 1973-09-21 IT IT29246/73A patent/IT993367B/it active
- 1973-09-24 NL NL7313144A patent/NL7313144A/xx not_active Application Discontinuation
- 1973-09-24 FR FR7334157A patent/FR2200635B1/fr not_active Expired
Non-Patent Citations (1)
| Title |
|---|
| NEANT * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2309040A1 (fr) * | 1975-04-22 | 1976-11-19 | Tokyo Shibaura Electric Co | Circuit integre comportant un transistor vertical a base epitaxiale |
| FR2581796A1 (fr) * | 1985-05-09 | 1986-11-14 | Sgs Microelettronica Spa | Circuit integre bipolaire comprenant des transistors pnp verticaux avec collecteur sur le substrat, et procede pour la realisation d'un tel circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7313144A (US20110105765A1-20110505-C00013.png) | 1974-03-26 |
| IT993367B (it) | 1975-09-30 |
| DE2347745A1 (de) | 1974-04-04 |
| CA1011467A (en) | 1977-05-31 |
| JPS4952987A (US20110105765A1-20110505-C00013.png) | 1974-05-23 |
| US3912555A (en) | 1975-10-14 |
| FR2200635B1 (US20110105765A1-20110505-C00013.png) | 1978-11-10 |
| JPS5942463B2 (ja) | 1984-10-15 |
| GB1444633A (en) | 1976-08-04 |
