FR2188309A1 - - Google Patents

Info

Publication number
FR2188309A1
FR2188309A1 FR7320220A FR7320220A FR2188309A1 FR 2188309 A1 FR2188309 A1 FR 2188309A1 FR 7320220 A FR7320220 A FR 7320220A FR 7320220 A FR7320220 A FR 7320220A FR 2188309 A1 FR2188309 A1 FR 2188309A1
Authority
FR
France
Prior art keywords
wafer
areas
layer
anchorage
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7320220A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microsystems International Ltd
Original Assignee
Microsystems International Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microsystems International Ltd filed Critical Microsystems International Ltd
Publication of FR2188309A1 publication Critical patent/FR2188309A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4822—Beam leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01072—Hafnium [Hf]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01084—Polonium [Po]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Weting (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR7320220A 1972-06-06 1973-06-04 Withdrawn FR2188309A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA144,012A CA954635A (en) 1972-06-06 1972-06-06 Mounting leads and method of fabrication

Publications (1)

Publication Number Publication Date
FR2188309A1 true FR2188309A1 (fr) 1974-01-18

Family

ID=4093489

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7320220A Withdrawn FR2188309A1 (fr) 1972-06-06 1973-06-04

Country Status (8)

Country Link
US (1) US3825353A (fr)
JP (1) JPS4957773A (fr)
CA (1) CA954635A (fr)
DE (1) DE2328884A1 (fr)
FR (1) FR2188309A1 (fr)
GB (1) GB1404383A (fr)
IT (1) IT994873B (fr)
NL (1) NL7307653A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995026568A1 (fr) * 1994-03-29 1995-10-05 Siemens Aktiengesellschaft Composant a semi-conducteur approprie a l'integration verticale et son procede de production
EP0852397A1 (fr) * 1997-01-02 1998-07-08 Texas Instruments Incorporated Connexion "cantilever" à boule pour empaquetage de puce à circuit intégré

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4035830A (en) * 1974-04-29 1977-07-12 Raytheon Company Composite semiconductor circuit and method of manufacture
US4182781A (en) * 1977-09-21 1980-01-08 Texas Instruments Incorporated Low cost method for forming elevated metal bumps on integrated circuit bodies employing an aluminum/palladium metallization base for electroless plating
US4754912A (en) * 1984-04-05 1988-07-05 National Semiconductor Corporation Controlled collapse thermocompression gang bonding
IT1215268B (it) * 1985-04-26 1990-01-31 Ates Componenti Elettron Apparecchio e metodo per il confezionamento perfezionato di dispositivi semiconduttori.
US4707418A (en) * 1985-06-26 1987-11-17 National Semiconductor Corporation Nickel plated copper tape
US5917707A (en) 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US5829128A (en) * 1993-11-16 1998-11-03 Formfactor, Inc. Method of mounting resilient contact structures to semiconductor devices
US5476211A (en) * 1993-11-16 1995-12-19 Form Factor, Inc. Method of manufacturing electrical contacts, using a sacrificial member
US7198969B1 (en) 1990-09-24 2007-04-03 Tessera, Inc. Semiconductor chip assemblies, methods of making same and components for same
US20010030370A1 (en) * 1990-09-24 2001-10-18 Khandros Igor Y. Microelectronic assembly having encapsulated wire bonding leads
US5679977A (en) * 1990-09-24 1997-10-21 Tessera, Inc. Semiconductor chip assemblies, methods of making same and components for same
US5148265A (en) 1990-09-24 1992-09-15 Ist Associates, Inc. Semiconductor chip assemblies with fan-in leads
US20050062492A1 (en) * 2001-08-03 2005-03-24 Beaman Brian Samuel High density integrated circuit apparatus, test probe and methods of use thereof
US5371654A (en) * 1992-10-19 1994-12-06 International Business Machines Corporation Three dimensional high performance interconnection package
US5820014A (en) * 1993-11-16 1998-10-13 Form Factor, Inc. Solder preforms
US20020053734A1 (en) 1993-11-16 2002-05-09 Formfactor, Inc. Probe card assembly and kit, and methods of making same
US7073254B2 (en) 1993-11-16 2006-07-11 Formfactor, Inc. Method for mounting a plurality of spring contact elements
US5620906A (en) 1994-02-28 1997-04-15 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device by introducing hydrogen ions
US6361959B1 (en) 1994-07-07 2002-03-26 Tessera, Inc. Microelectronic unit forming methods and materials
US5518964A (en) * 1994-07-07 1996-05-21 Tessera, Inc. Microelectronic mounting with multiple lead deformation and bonding
US6228686B1 (en) * 1995-09-18 2001-05-08 Tessera, Inc. Method of fabricating a microelectronic assembly using sheets with gaps to define lead regions
US5688716A (en) * 1994-07-07 1997-11-18 Tessera, Inc. Fan-out semiconductor chip assembly
US6117694A (en) * 1994-07-07 2000-09-12 Tessera, Inc. Flexible lead structures and methods of making same
US5830782A (en) * 1994-07-07 1998-11-03 Tessera, Inc. Microelectronic element bonding with deformation of leads in rows
US5798286A (en) * 1995-09-22 1998-08-25 Tessera, Inc. Connecting multiple microelectronic elements with lead deformation
US6429112B1 (en) 1994-07-07 2002-08-06 Tessera, Inc. Multi-layer substrates and fabrication processes
US6828668B2 (en) * 1994-07-07 2004-12-07 Tessera, Inc. Flexible lead structures and methods of making same
US6848173B2 (en) * 1994-07-07 2005-02-01 Tessera, Inc. Microelectric packages having deformed bonded leads and methods therefor
US6261863B1 (en) 1995-10-24 2001-07-17 Tessera, Inc. Components with releasable leads and methods of making releasable leads
US5763941A (en) * 1995-10-24 1998-06-09 Tessera, Inc. Connection component with releasable leads
US5994152A (en) * 1996-02-21 1999-11-30 Formfactor, Inc. Fabricating interconnects and tips using sacrificial substrates
US8033838B2 (en) 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
US6880245B2 (en) * 1996-03-12 2005-04-19 International Business Machines Corporation Method for fabricating a structure for making contact with an IC device
US6221750B1 (en) 1998-10-28 2001-04-24 Tessera, Inc. Fabrication of deformable leads of microelectronic elements
US6333207B1 (en) 1999-05-24 2001-12-25 Tessera, Inc. Peelable lead structure and method of manufacture
US6627478B2 (en) * 1999-05-24 2003-09-30 Tessera, Inc. Method of making a microelectronic assembly with multiple lead deformation using differential thermal expansion/contraction
US6405429B1 (en) * 1999-08-26 2002-06-18 Honeywell Inc. Microbeam assembly and associated method for integrated circuit interconnection to substrates
DE10017746B4 (de) * 2000-04-10 2005-10-13 Infineon Technologies Ag Verfahren zur Herstellung eines elektronischen Bauteils mit mikroskopisch kleinen Kontaktflächen
JP4120133B2 (ja) * 2000-04-28 2008-07-16 沖電気工業株式会社 半導体装置及びその製造方法
JP4041663B2 (ja) * 2001-09-12 2008-01-30 株式会社ルネサステクノロジ 半導体装置及びその検査装置
US6586043B1 (en) * 2002-01-09 2003-07-01 Micron Technology, Inc. Methods of electroless deposition of nickel, methods of forming under bump metallurgy, and constructions comprising solder bumps
US20050150877A1 (en) * 2002-07-29 2005-07-14 Sumitomo Precision Products Co., Ltd. Method and device for laser beam processing of silicon substrate, and method and device for laser beam cutting of silicon wiring
US7115998B2 (en) * 2002-08-29 2006-10-03 Micron Technology, Inc. Multi-component integrated circuit contacts
US7967062B2 (en) * 2006-06-16 2011-06-28 International Business Machines Corporation Thermally conductive composite interface, cooled electronic assemblies employing the same, and methods of fabrication thereof
US8649820B2 (en) 2011-11-07 2014-02-11 Blackberry Limited Universal integrated circuit card apparatus and related methods
US8936199B2 (en) 2012-04-13 2015-01-20 Blackberry Limited UICC apparatus and related methods
USD703208S1 (en) 2012-04-13 2014-04-22 Blackberry Limited UICC apparatus
USD701864S1 (en) * 2012-04-23 2014-04-01 Blackberry Limited UICC apparatus
CN111763612B (zh) * 2020-06-10 2022-10-18 宁波大学 一种单细胞基因检测芯片及其制作方法与检测方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995026568A1 (fr) * 1994-03-29 1995-10-05 Siemens Aktiengesellschaft Composant a semi-conducteur approprie a l'integration verticale et son procede de production
US5930596A (en) * 1994-03-29 1999-07-27 Siemens Aktiengesellschaft Semiconductor component for vertical integration and manufacturing method
EP0852397A1 (fr) * 1997-01-02 1998-07-08 Texas Instruments Incorporated Connexion "cantilever" à boule pour empaquetage de puce à circuit intégré
US6064576A (en) * 1997-01-02 2000-05-16 Texas Instruments Incorporated Interposer having a cantilevered ball connection and being electrically connected to a printed circuit board

Also Published As

Publication number Publication date
DE2328884A1 (de) 1973-12-20
CA954635A (en) 1974-09-10
GB1404383A (en) 1975-08-28
NL7307653A (fr) 1973-12-10
US3825353A (en) 1974-07-23
IT994873B (it) 1975-10-20
JPS4957773A (fr) 1974-06-05

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