FR2180540A1 - Semiconductor devices prodn - by ion implantation - Google Patents

Semiconductor devices prodn - by ion implantation

Info

Publication number
FR2180540A1
FR2180540A1 FR7213982A FR7213982A FR2180540A1 FR 2180540 A1 FR2180540 A1 FR 2180540A1 FR 7213982 A FR7213982 A FR 7213982A FR 7213982 A FR7213982 A FR 7213982A FR 2180540 A1 FR2180540 A1 FR 2180540A1
Authority
FR
France
Prior art keywords
prodn
semiconductor devices
ion implantation
pref
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7213982A
Other languages
English (en)
Other versions
FR2180540B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FAVENNEC PIERRE NOEL FR
Original Assignee
FAVENNEC PIERRE NOEL FR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FAVENNEC PIERRE NOEL FR filed Critical FAVENNEC PIERRE NOEL FR
Priority to FR7213982A priority Critical patent/FR2180540A1/fr
Publication of FR2180540A1 publication Critical patent/FR2180540A1/fr
Application granted granted Critical
Publication of FR2180540B1 publication Critical patent/FR2180540B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/7605—Making of isolation regions between components between components manufactured in an active substrate comprising AIII BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7213982A 1972-04-20 1972-04-20 Semiconductor devices prodn - by ion implantation Granted FR2180540A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7213982A FR2180540A1 (en) 1972-04-20 1972-04-20 Semiconductor devices prodn - by ion implantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7213982A FR2180540A1 (en) 1972-04-20 1972-04-20 Semiconductor devices prodn - by ion implantation

Publications (2)

Publication Number Publication Date
FR2180540A1 true FR2180540A1 (en) 1973-11-30
FR2180540B1 FR2180540B1 (fr) 1977-07-22

Family

ID=9097223

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7213982A Granted FR2180540A1 (en) 1972-04-20 1972-04-20 Semiconductor devices prodn - by ion implantation

Country Status (1)

Country Link
FR (1) FR2180540A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2458899A1 (fr) * 1979-06-12 1981-01-02 Dearnaley G Procede de production de regions de haute resistivite dans le corps d'un dispositif semi-conducteur
FR2513439A1 (fr) * 1981-09-18 1983-03-25 Labo Electronique Physique Procede de traitement de substrat de gaas, par implantation ionique, et substrats ainsi obtenus
US5086004A (en) * 1988-03-14 1992-02-04 Polaroid Corporation Isolation of layered P-N junctions by diffusion to semi-insulating substrate and implantation of top layer
EP0564163A1 (fr) * 1992-03-31 1993-10-06 AT&T Corp. Photodétecteur planaire à puits quantique utilisant une isolation par implantation ionique
US5665613A (en) * 1994-06-03 1997-09-09 Komatsu Electronic Metals Co., Ltd. Method of making semiconductor device having SIMOX structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1098564A (en) * 1966-09-20 1968-01-10 Standard Telephones Cables Ltd A method for producing gallium arsenide devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1098564A (en) * 1966-09-20 1968-01-10 Standard Telephones Cables Ltd A method for producing gallium arsenide devices

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT' A. G. FOYT AT. AL. PAGES 209-214.) *
REVUE INTERNATIONALE 'SOLID STATE ELECTRONICS' VOLUME 12, NO. 4,AVRIL 1969 'ISOLATION OF *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2458899A1 (fr) * 1979-06-12 1981-01-02 Dearnaley G Procede de production de regions de haute resistivite dans le corps d'un dispositif semi-conducteur
FR2513439A1 (fr) * 1981-09-18 1983-03-25 Labo Electronique Physique Procede de traitement de substrat de gaas, par implantation ionique, et substrats ainsi obtenus
EP0075368A2 (fr) * 1981-09-18 1983-03-30 Laboratoires D'electronique Et De Physique Appliquee L.E.P. Procédé de fabrication d'un dispositif semi-conducteur en GaAs par implantations ioniques, ainsi que substrat et dispositif ainsi obtenus
EP0075368A3 (en) * 1981-09-18 1984-08-29 Laboratoires D'electronique Et De Physique Appliquee L.E.P. Method of making a gaas semiconductor device by ion implantation, and substrate and device so obtained
US5086004A (en) * 1988-03-14 1992-02-04 Polaroid Corporation Isolation of layered P-N junctions by diffusion to semi-insulating substrate and implantation of top layer
EP0564163A1 (fr) * 1992-03-31 1993-10-06 AT&T Corp. Photodétecteur planaire à puits quantique utilisant une isolation par implantation ionique
US5665613A (en) * 1994-06-03 1997-09-09 Komatsu Electronic Metals Co., Ltd. Method of making semiconductor device having SIMOX structure

Also Published As

Publication number Publication date
FR2180540B1 (fr) 1977-07-22

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