FR2176999A1 - - Google Patents

Info

Publication number
FR2176999A1
FR2176999A1 FR7310134A FR7310134A FR2176999A1 FR 2176999 A1 FR2176999 A1 FR 2176999A1 FR 7310134 A FR7310134 A FR 7310134A FR 7310134 A FR7310134 A FR 7310134A FR 2176999 A1 FR2176999 A1 FR 2176999A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7310134A
Other languages
French (fr)
Other versions
FR2176999B1 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US00237060A external-priority patent/US3808072A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2176999A1 publication Critical patent/FR2176999A1/fr
Application granted granted Critical
Publication of FR2176999B1 publication Critical patent/FR2176999B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
FR7310134A 1972-03-22 1973-03-21 Expired FR2176999B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US00237060A US3808072A (en) 1972-03-22 1972-03-22 In situ etching of gallium arsenide during vapor phase growth of epitaxial gallium arsenide
US24931172A 1972-05-01 1972-05-01

Publications (2)

Publication Number Publication Date
FR2176999A1 true FR2176999A1 (de) 1973-11-02
FR2176999B1 FR2176999B1 (de) 1978-03-03

Family

ID=26930348

Family Applications (2)

Application Number Title Priority Date Filing Date
FR7310133A Expired FR2176998B1 (de) 1972-03-22 1973-03-21
FR7310134A Expired FR2176999B1 (de) 1972-03-22 1973-03-21

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR7310133A Expired FR2176998B1 (de) 1972-03-22 1973-03-21

Country Status (6)

Country Link
JP (2) JPS5232831B2 (de)
FR (2) FR2176998B1 (de)
GB (2) GB1425101A (de)
IT (2) IT979892B (de)
NL (2) NL160989C (de)
SE (2) SE375557B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244582A (en) * 1975-10-06 1977-04-07 New Japan Radio Co Ltd Semiconductor device and process for production of the same
JPS55114620A (en) * 1979-02-22 1980-09-04 Yoshio Kaneda Driver's cab on tractor or the like
JPS56169331A (en) * 1980-05-30 1981-12-26 Nec Corp Vapor phase etching method for compound semiconductor
JPS5770810A (en) * 1980-10-17 1982-05-01 Lion Corp Cosmetic for hair
JPS60222410A (ja) * 1984-04-20 1985-11-07 Asahi Denka Kogyo Kk シヤンプ−組成物

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4916231A (de) * 1972-06-06 1974-02-13

Non-Patent Citations (11)

* Cited by examiner, † Cited by third party
Title
10 N 8, JANVIER 1968 'VAPOR ETCHING OF GALLIUM ARSENIDE' A.E.BLAKESLEE ET AL, PAGE 1326 *
LE 3-7 OCTOBRE 1971 *
MILLIMETER WAVE GEAR', PAGES 8E-9E *
PAGES 541-544. *
R.D.FAIRMAN ET AL, COMMUNICATION N 193RNP PRESENTEE AU 'MEETING OF THE ELECTROCHEMICAL SOCIETY' *
REVUE AMERICAINE 'ELECTRONICS', VOLUME 45, N 2, JANVIER 1972 'PLANAR SCHOTTKY DIODES FOR QUASI *
REVUE AMERICAINE 'IBM TECHNICAL DISCLOSURE BULLETIN', VOL. *
REVUE AMERICAINE 'JOURNAL OF THE ELECTROCHEMICAL SOCIETY' *
REVUE AMERICAINE 'PROCEEDINGS OF THE IEEE', VOLUME 59, N 7, JUILLET 1971 'GAAS SCHOTTKY DIODES *
VOLUME 120, N 4, AVRIL 1973 'SUBMICRON EPITAXIAL FILMS FOR GA AS FIELD EFFECT TRANSISTORS', *
WITH NEAR-IDEAL CHARACTERISTICS', D.J.COLEMAN, JR ET AL, PAGES 1121-1122) *

Also Published As

Publication number Publication date
NL160989C (nl) 1979-12-17
NL7303958A (de) 1973-09-25
FR2176998B1 (de) 1976-11-05
JPS5433711B2 (de) 1979-10-22
FR2176998A1 (de) 1973-11-02
FR2176999B1 (de) 1978-03-03
DE2313768A1 (de) 1973-10-04
IT982897B (it) 1974-10-21
SE375557B (de) 1975-04-21
JPS5019367A (de) 1975-02-28
DE2313768B2 (de) 1975-11-20
JPS5232831B2 (de) 1977-08-24
NL7303954A (de) 1973-09-25
NL162313B (nl) 1979-12-17
JPS4948281A (de) 1974-05-10
GB1425101A (en) 1976-02-18
NL160989B (nl) 1979-07-16
SE388972B (sv) 1976-10-18
IT979892B (it) 1974-09-30
GB1425102A (en) 1976-02-18
NL162313C (nl) 1980-05-16

Similar Documents

Publication Publication Date Title
FR2197489A5 (de)
FR2174958A1 (de)
JPS4880951A (de)
JPS566800B2 (de)
AU466258B2 (de)
FR2176999B1 (de)
JPS49306U (de)
FR2171344B1 (de)
JPS4947995A (de)
JPS4884569A (de)
JPS4899181U (de)
JPS4916231A (de)
JPS5437171B2 (de)
FR2172938A1 (de)
JPS5131608Y2 (de)
JPS5138592B2 (de)
JPS48111654U (de)
JPS4920893U (de)
JPS4890254U (de)
JPS4960614U (de)
CH585119A5 (de)
CH579673B5 (de)
CH577269A5 (de)
CH577500A5 (de)
BG21213A3 (de)

Legal Events

Date Code Title Description
ST Notification of lapse