FR2160534B1 - - Google Patents
Info
- Publication number
- FR2160534B1 FR2160534B1 FR7240711A FR7240711A FR2160534B1 FR 2160534 B1 FR2160534 B1 FR 2160534B1 FR 7240711 A FR7240711 A FR 7240711A FR 7240711 A FR7240711 A FR 7240711A FR 2160534 B1 FR2160534 B1 FR 2160534B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76221—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO with a plurality of successive local oxidation steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7116013.A NL161305C (nl) | 1971-11-20 | 1971-11-20 | Werkwijze voor het vervaardigen van een halfgeleiderin- richting. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2160534A1 FR2160534A1 (US07534539-20090519-C00014.png) | 1973-06-29 |
FR2160534B1 true FR2160534B1 (US07534539-20090519-C00014.png) | 1976-01-30 |
Family
ID=19814524
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7240711A Expired FR2160534B1 (US07534539-20090519-C00014.png) | 1971-11-20 | 1972-11-16 |
Country Status (11)
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4911079A (US07534539-20090519-C00014.png) * | 1972-05-26 | 1974-01-31 | ||
JPS5550395B2 (US07534539-20090519-C00014.png) * | 1972-07-08 | 1980-12-17 | ||
JPS5087784A (US07534539-20090519-C00014.png) * | 1973-12-08 | 1975-07-15 | ||
US3931674A (en) * | 1974-02-08 | 1976-01-13 | Fairchild Camera And Instrument Corporation | Self aligned CCD element including two levels of electrodes and method of manufacture therefor |
US3979765A (en) * | 1974-03-07 | 1976-09-07 | Signetics Corporation | Silicon gate MOS device and method |
JPS5928992B2 (ja) * | 1975-02-14 | 1984-07-17 | 日本電信電話株式会社 | Mosトランジスタおよびその製造方法 |
JPS5222481A (en) * | 1975-08-14 | 1977-02-19 | Oki Electric Ind Co Ltd | Method of manufacturing semiconductor device |
JPS52124635A (en) * | 1976-04-12 | 1977-10-19 | Kishirou Igarashi | Lift for carrying |
JPS5342567A (en) * | 1976-09-30 | 1978-04-18 | Oki Electric Ind Co Ltd | Semiconductor device and its production |
US4402002A (en) * | 1978-04-06 | 1983-08-30 | Harris Corporation | Radiation hardened-self aligned CMOS and method of fabrication |
US4313768A (en) * | 1978-04-06 | 1982-02-02 | Harris Corporation | Method of fabricating improved radiation hardened self-aligned CMOS having Si doped Al field gate |
US4506437A (en) * | 1978-05-26 | 1985-03-26 | Rockwell International Corporation | Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
US4455737A (en) * | 1978-05-26 | 1984-06-26 | Rockwell International Corporation | Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
US5191396B1 (en) * | 1978-10-13 | 1995-12-26 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
JPS5548972A (en) * | 1979-10-08 | 1980-04-08 | Hitachi Ltd | Insulation gate type electric field effective transistor |
US4476479A (en) * | 1980-03-31 | 1984-10-09 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device with operating voltage coupling region |
AT387474B (de) * | 1980-12-23 | 1989-01-25 | Philips Nv | Verfahren zur herstellung einer halbleitervorrichtung |
NL187328C (nl) * | 1980-12-23 | 1991-08-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
US4486943A (en) * | 1981-12-16 | 1984-12-11 | Inmos Corporation | Zero drain overlap and self aligned contact method for MOS devices |
CA1197926A (en) * | 1981-12-16 | 1985-12-10 | William D. Ryden | Zero drain overlap and self-aligned contacts and contact methods for mod devices |
US4686000A (en) * | 1985-04-02 | 1987-08-11 | Heath Barbara A | Self-aligned contact process |
US4826781A (en) * | 1986-03-04 | 1989-05-02 | Seiko Epson Corporation | Semiconductor device and method of preparation |
US4748103A (en) * | 1986-03-21 | 1988-05-31 | Advanced Power Technology | Mask-surrogate semiconductor process employing dopant protective region |
IT1250233B (it) * | 1991-11-29 | 1995-04-03 | St Microelectronics Srl | Procedimento per la fabbricazione di circuiti integrati in tecnologia mos. |
EP0549055A3 (en) * | 1991-12-23 | 1996-10-23 | Koninkl Philips Electronics Nv | Method of manufacturing a semiconductor device provided with a field effect transistor, and such a semiconductor device |
US6344663B1 (en) * | 1992-06-05 | 2002-02-05 | Cree, Inc. | Silicon carbide CMOS devices |
JP3431647B2 (ja) | 1992-10-30 | 2003-07-28 | 株式会社半導体エネルギー研究所 | 半導体装置とその作製方法およびメモリ装置の作製方法およびレーザードーピング処理方法 |
US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
US6437416B1 (en) * | 1996-04-12 | 2002-08-20 | Cree Microwave, Inc. | Semiconductor structure having a planar junction termination with high breakdown voltage and low parasitic capacitance |
JPH09312391A (ja) * | 1996-05-22 | 1997-12-02 | Toshiba Corp | 半導体装置およびその製造方法 |
US20080099796A1 (en) * | 2006-11-01 | 2008-05-01 | Vora Madhukar B | Device with patterned semiconductor electrode structure and method of manufacture |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1535286A (fr) * | 1966-09-26 | 1968-08-02 | Gen Micro Electronics | Transistor semi-conducteur à oxyde métallique à effet de champ et son procédé de fabrication |
US3544399A (en) * | 1966-10-26 | 1970-12-01 | Hughes Aircraft Co | Insulated gate field-effect transistor (igfet) with semiconductor gate electrode |
US3475234A (en) * | 1967-03-27 | 1969-10-28 | Bell Telephone Labor Inc | Method for making mis structures |
NL152707B (nl) * | 1967-06-08 | 1977-03-15 | Philips Nv | Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan. |
US3616380A (en) * | 1968-11-22 | 1971-10-26 | Bell Telephone Labor Inc | Barrier layer devices and methods for their manufacture |
US3576478A (en) * | 1969-07-22 | 1971-04-27 | Philco Ford Corp | Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode |
NL164424C (nl) * | 1970-06-04 | 1980-12-15 | Philips Nv | Werkwijze voor het vervaardigen van een veldeffect- transistor met een geisoleerde stuurelektrode, waarbij een door een tegen oxydatie maskerende laag vrijgelaten deel van het oppervlak van een siliciumlichaam aan een oxydatiebehandeling wordt onderworpen ter verkrijging van een althans gedeeltelijk in het siliciumlichaam verzonken siliciumoxydelaag. |
US3673471A (en) * | 1970-10-08 | 1972-06-27 | Fairchild Camera Instr Co | Doped semiconductor electrodes for mos type devices |
US3699646A (en) * | 1970-12-28 | 1972-10-24 | Intel Corp | Integrated circuit structure and method for making integrated circuit structure |
-
1971
- 1971-11-20 NL NL7116013.A patent/NL161305C/xx not_active IP Right Cessation
-
1972
- 1972-11-02 DE DE2253702A patent/DE2253702C3/de not_active Expired
- 1972-11-07 US US00304392A patent/US3849216A/en not_active Expired - Lifetime
- 1972-11-15 AU AU48876/72A patent/AU474400B2/en not_active Expired
- 1972-11-15 CA CA156,455A patent/CA970076A/en not_active Expired
- 1972-11-16 FR FR7240711A patent/FR2160534B1/fr not_active Expired
- 1972-11-17 CH CH1680772A patent/CH554073A/xx not_active IP Right Cessation
- 1972-11-17 JP JP47114916A patent/JPS5122348B2/ja not_active Expired
- 1972-11-17 GB GB5320372A patent/GB1408180A/en not_active Expired
- 1972-11-17 IT IT70625/72A patent/IT982456B/it active
- 1972-11-18 ES ES408758A patent/ES408758A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL161305B (nl) | 1979-08-15 |
JPS4863680A (US07534539-20090519-C00014.png) | 1973-09-04 |
DE2253702C3 (de) | 1980-03-06 |
ES408758A1 (es) | 1976-04-16 |
DE2253702B2 (de) | 1979-07-12 |
CH554073A (de) | 1974-09-13 |
IT982456B (it) | 1974-10-21 |
DE2253702A1 (de) | 1973-05-24 |
JPS5122348B2 (US07534539-20090519-C00014.png) | 1976-07-09 |
GB1408180A (en) | 1975-10-01 |
NL7116013A (US07534539-20090519-C00014.png) | 1973-05-22 |
AU474400B2 (en) | 1976-07-22 |
FR2160534A1 (US07534539-20090519-C00014.png) | 1973-06-29 |
US3849216A (en) | 1974-11-19 |
CA970076A (en) | 1975-06-24 |
AU4887672A (en) | 1974-05-16 |
NL161305C (nl) | 1980-01-15 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |