FR2159344A1 - - Google Patents

Info

Publication number
FR2159344A1
FR2159344A1 FR7239442A FR7239442A FR2159344A1 FR 2159344 A1 FR2159344 A1 FR 2159344A1 FR 7239442 A FR7239442 A FR 7239442A FR 7239442 A FR7239442 A FR 7239442A FR 2159344 A1 FR2159344 A1 FR 2159344A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7239442A
Other languages
French (fr)
Other versions
FR2159344B1 (cg-RX-API-DMAC10.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron GmbH and Co KG filed Critical Semikron GmbH and Co KG
Publication of FR2159344A1 publication Critical patent/FR2159344A1/fr
Application granted granted Critical
Publication of FR2159344B1 publication Critical patent/FR2159344B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H10W74/47
    • H10P14/6306
    • H10P14/6308
    • H10P14/6312
    • H10P14/6508
    • H10P14/6509
    • H10P14/6536
    • H10P14/6538
    • H10P14/683
    • H10W74/131
    • H10P14/6304
    • H10P14/6342
    • H10P14/6686
    • H10P14/6922
FR7239442A 1971-11-10 1972-11-08 Expired FR2159344B1 (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2155849A DE2155849C3 (de) 1971-11-10 1971-11-10 Verfahren zur Herstellung eines stabilisierenden und/oder isolierenden Überzuges auf Halbleiteroberflächen

Publications (2)

Publication Number Publication Date
FR2159344A1 true FR2159344A1 (cg-RX-API-DMAC10.html) 1973-06-22
FR2159344B1 FR2159344B1 (cg-RX-API-DMAC10.html) 1977-12-23

Family

ID=5824722

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7239442A Expired FR2159344B1 (cg-RX-API-DMAC10.html) 1971-11-10 1972-11-08

Country Status (10)

Country Link
US (1) US3896254A (cg-RX-API-DMAC10.html)
JP (1) JPS4876475A (cg-RX-API-DMAC10.html)
BR (1) BR7207887D0 (cg-RX-API-DMAC10.html)
CH (1) CH565451A5 (cg-RX-API-DMAC10.html)
DE (1) DE2155849C3 (cg-RX-API-DMAC10.html)
ES (1) ES407115A1 (cg-RX-API-DMAC10.html)
FR (1) FR2159344B1 (cg-RX-API-DMAC10.html)
GB (1) GB1408314A (cg-RX-API-DMAC10.html)
IT (1) IT970349B (cg-RX-API-DMAC10.html)
SE (1) SE376686B (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2292334A1 (fr) * 1974-11-20 1976-06-18 Matsushita Electric Industrial Co Ltd Procede de traitement de dispositifs semi-conducteurs pour ameliorer les caracteristiques et nouveaux produits ainsi obtenus
FR2517121A1 (fr) * 1981-11-23 1983-05-27 Hughes Aircraft Co Procede pour former une couche d'un oxyde naturel sur un substrat et dispositif semi-conducteur ainsi forme

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4098921A (en) * 1976-04-28 1978-07-04 Cutler-Hammer Tantalum-gallium arsenide schottky barrier semiconductor device
US4199649A (en) * 1978-04-12 1980-04-22 Bard Laboratories, Inc. Amorphous monomolecular surface coatings
US5225235A (en) * 1987-05-18 1993-07-06 Osaka Titanium Co., Ltd. Semiconductor wafer and manufacturing method therefor
US4925809A (en) * 1987-05-23 1990-05-15 Osaka Titanium Co., Ltd. Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor
US5389194A (en) * 1993-02-05 1995-02-14 Lsi Logic Corporation Methods of cleaning semiconductor substrates after polishing
DE4432294A1 (de) 1994-09-12 1996-03-14 Telefunken Microelectron Verfahren zur Reduzierung der Oberflächenrekombinationsgeschwindigkeit in Silizium
DE19537545A1 (de) * 1995-10-09 1997-04-10 Telefunken Microelectron Verfahren zur Herstellung einer Lumineszenzdiode
EP0991092B1 (en) * 1998-09-30 2008-07-23 FUJIFILM Corporation Semiconductor particle sensitized with methine dye
DE19948206A1 (de) * 1999-10-07 2001-04-12 Merck Patent Gmbh Verfahren zur Herstellung hochreiner Salzsäure
JP4375991B2 (ja) * 2003-04-09 2009-12-02 関東化学株式会社 半導体基板洗浄液組成物

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB876750A (en) * 1957-08-07 1961-09-06 Siemens Ag Moisture-proof semi-conductors
FR1571704A (cg-RX-API-DMAC10.html) * 1966-04-27 1969-06-20

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3188229A (en) * 1961-10-03 1965-06-08 Du Pont Process of adhering an organic coating to a substrate
US3346384A (en) * 1963-04-25 1967-10-10 Gen Electric Metal image formation
US3450017A (en) * 1966-04-15 1969-06-17 Pentacon Dresden Veb Cameras
NL6707515A (cg-RX-API-DMAC10.html) * 1967-05-31 1968-12-02
GB1237433A (en) * 1968-06-06 1971-06-30 Standard Telephones Cables Ltd Improvements in or relating to photolithographic masks
US3666548A (en) * 1970-01-06 1972-05-30 Ibm Monocrystalline semiconductor body having dielectrically isolated regions and method of forming

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB876750A (en) * 1957-08-07 1961-09-06 Siemens Ag Moisture-proof semi-conductors
FR1571704A (cg-RX-API-DMAC10.html) * 1966-04-27 1969-06-20

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2292334A1 (fr) * 1974-11-20 1976-06-18 Matsushita Electric Industrial Co Ltd Procede de traitement de dispositifs semi-conducteurs pour ameliorer les caracteristiques et nouveaux produits ainsi obtenus
FR2517121A1 (fr) * 1981-11-23 1983-05-27 Hughes Aircraft Co Procede pour former une couche d'un oxyde naturel sur un substrat et dispositif semi-conducteur ainsi forme

Also Published As

Publication number Publication date
DE2155849C3 (de) 1979-07-26
FR2159344B1 (cg-RX-API-DMAC10.html) 1977-12-23
IT970349B (it) 1974-04-10
BR7207887D0 (pt) 1973-09-25
DE2155849A1 (de) 1973-05-17
US3896254A (en) 1975-07-22
DE2155849B2 (de) 1978-11-16
ES407115A1 (es) 1975-10-16
CH565451A5 (cg-RX-API-DMAC10.html) 1975-08-15
SE376686B (cg-RX-API-DMAC10.html) 1975-06-02
GB1408314A (en) 1975-10-01
JPS4876475A (cg-RX-API-DMAC10.html) 1973-10-15

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Legal Events

Date Code Title Description
ST Notification of lapse