FR2292334A1 - Procede de traitement de dispositifs semi-conducteurs pour ameliorer les caracteristiques et nouveaux produits ainsi obtenus - Google Patents

Procede de traitement de dispositifs semi-conducteurs pour ameliorer les caracteristiques et nouveaux produits ainsi obtenus

Info

Publication number
FR2292334A1
FR2292334A1 FR7534951A FR7534951A FR2292334A1 FR 2292334 A1 FR2292334 A1 FR 2292334A1 FR 7534951 A FR7534951 A FR 7534951A FR 7534951 A FR7534951 A FR 7534951A FR 2292334 A1 FR2292334 A1 FR 2292334A1
Authority
FR
France
Prior art keywords
improve
semiconductor devices
new products
treating semiconductor
treating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7534951A
Other languages
English (en)
Other versions
FR2292334B1 (fr
Inventor
Tooru Tamura
Tamura Nobuyuki Ojima Sigeru Kondo Et Kenichirou Kishita Tooru
Nobuyuki Ojima
Sigeru Kondo
Kenichirou Kishita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP13402774A external-priority patent/JPS5159272A/ja
Priority claimed from JP6039475A external-priority patent/JPS51135369A/ja
Priority claimed from JP6074875A external-priority patent/JPS51135470A/ja
Priority claimed from JP6074775A external-priority patent/JPS51135473A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of FR2292334A1 publication Critical patent/FR2292334A1/fr
Application granted granted Critical
Publication of FR2292334B1 publication Critical patent/FR2292334B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
FR7534951A 1974-11-20 1975-11-17 Procede de traitement de dispositifs semi-conducteurs pour ameliorer les caracteristiques et nouveaux produits ainsi obtenus Granted FR2292334A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP13402774A JPS5159272A (en) 1974-11-20 1974-11-20 Handotaisochino seizohoho
JP6039475A JPS51135369A (en) 1975-05-19 1975-05-19 Method of treating surfaces of semiconductor element
JP6074875A JPS51135470A (en) 1975-05-20 1975-05-20 Semi-conductor unit
JP6074775A JPS51135473A (en) 1975-05-20 1975-05-20 Surface treatment agent of semi- conductor elements

Publications (2)

Publication Number Publication Date
FR2292334A1 true FR2292334A1 (fr) 1976-06-18
FR2292334B1 FR2292334B1 (fr) 1979-04-27

Family

ID=27463910

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7534951A Granted FR2292334A1 (fr) 1974-11-20 1975-11-17 Procede de traitement de dispositifs semi-conducteurs pour ameliorer les caracteristiques et nouveaux produits ainsi obtenus

Country Status (4)

Country Link
US (1) US4210498A (fr)
DE (1) DE2551808A1 (fr)
FR (1) FR2292334A1 (fr)
GB (1) GB1492207A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3608604A1 (de) * 1986-03-14 1987-09-17 Siemens Ag Strukturierbares fotoelektrochemisches abtragen
JP2548703B2 (ja) * 1986-07-11 1996-10-30 三菱電機株式会社 論理回路
US7432233B2 (en) * 2003-12-18 2008-10-07 Interuniversitair Microelektronica Centrum (Imec) Composition and method for treating a semiconductor substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2159344A1 (fr) * 1971-11-10 1973-06-22 Semikron Gleichrichterbau
FR2164775A1 (fr) * 1971-12-23 1973-08-03 Semikron Gleichrichterbau

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3284202A (en) * 1961-08-11 1966-11-08 Litho Chemical And Supply Co I Lithographic plate, its preparation and treatment solution therefor
US3853593A (en) * 1971-07-31 1974-12-10 Centro Speriment Metallurg Process for improving the protective properties of chromium-oxide based compound coatings, by means of stabilization of the chromium ion

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2159344A1 (fr) * 1971-11-10 1973-06-22 Semikron Gleichrichterbau
FR2164775A1 (fr) * 1971-12-23 1973-08-03 Semikron Gleichrichterbau

Also Published As

Publication number Publication date
US4210498A (en) 1980-07-01
FR2292334B1 (fr) 1979-04-27
DE2551808A1 (de) 1976-05-26
GB1492207A (en) 1977-11-16

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Legal Events

Date Code Title Description
ST Notification of lapse