FR2145460A1 - - Google Patents
Info
- Publication number
- FR2145460A1 FR2145460A1 FR7212677A FR7212677A FR2145460A1 FR 2145460 A1 FR2145460 A1 FR 2145460A1 FR 7212677 A FR7212677 A FR 7212677A FR 7212677 A FR7212677 A FR 7212677A FR 2145460 A1 FR2145460 A1 FR 2145460A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16147871A | 1971-07-12 | 1971-07-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2145460A1 true FR2145460A1 (enrdf_load_stackoverflow) | 1973-02-23 |
| FR2145460B1 FR2145460B1 (enrdf_load_stackoverflow) | 1977-01-14 |
Family
ID=22581334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7212677A Expired FR2145460B1 (enrdf_load_stackoverflow) | 1971-07-12 | 1972-04-11 |
Country Status (10)
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2404922A1 (fr) * | 1977-09-30 | 1979-04-27 | Radiotechnique Compelec | Dispositif semi-conducteur formant cellule de memoire morte programmable |
| DE3229250A1 (de) * | 1981-08-07 | 1983-07-21 | Hitachi, Ltd., Tokyo | Halbleitervorrichtung mit isoliertem gate und verfahren zu ihrer herstellung |
| EP0372820A3 (en) * | 1988-12-02 | 1991-07-17 | Motorola Inc. | Semiconducteur device having high energy sustaining capability and a temperature compensated sustaining voltage |
| EP0414499A3 (en) * | 1989-08-22 | 1991-07-31 | Motorola, Inc. | Semiconductor structure with closely coupled substrate temperature sense element |
| EP0622850A1 (en) * | 1993-04-30 | 1994-11-02 | International Business Machines Corporation | An electrostatic discharge protect diode for silicon-on-insulator technology |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57141962A (en) * | 1981-02-27 | 1982-09-02 | Hitachi Ltd | Semiconductor integrated circuit device |
| US5005061A (en) * | 1990-02-05 | 1991-04-02 | Motorola, Inc. | Avalanche stress protected semiconductor device having variable input impedance |
| JP5924313B2 (ja) | 2012-08-06 | 2016-05-25 | 株式会社デンソー | ダイオード |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3728591A (en) * | 1971-09-03 | 1973-04-17 | Rca Corp | Gate protective device for insulated gate field-effect transistors |
-
1972
- 1972-03-16 CA CA137,313A patent/CA941515A/en not_active Expired
- 1972-03-30 GB GB1497872A patent/GB1380466A/en not_active Expired
- 1972-03-30 DE DE2215850A patent/DE2215850A1/de active Pending
- 1972-04-05 BE BE781698A patent/BE781698A/xx unknown
- 1972-04-06 NL NL7204607A patent/NL7204607A/xx not_active Application Discontinuation
- 1972-04-10 AU AU40993/72A patent/AU471347B2/en not_active Expired
- 1972-04-11 SE SE7204661A patent/SE379117B/xx unknown
- 1972-04-11 FR FR7212677A patent/FR2145460B1/fr not_active Expired
- 1972-04-11 IT IT23019/72A patent/IT951315B/it active
- 1972-04-12 JP JP47036813A patent/JPS5138587B1/ja active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2404922A1 (fr) * | 1977-09-30 | 1979-04-27 | Radiotechnique Compelec | Dispositif semi-conducteur formant cellule de memoire morte programmable |
| DE3229250A1 (de) * | 1981-08-07 | 1983-07-21 | Hitachi, Ltd., Tokyo | Halbleitervorrichtung mit isoliertem gate und verfahren zu ihrer herstellung |
| US4688323A (en) * | 1981-08-07 | 1987-08-25 | Hitachi, Ltd. | Method for fabricating vertical MOSFETs |
| US4831424A (en) * | 1981-08-07 | 1989-05-16 | Hitachi, Ltd. | Insulated gate semiconductor device with back-to-back diodes |
| EP0372820A3 (en) * | 1988-12-02 | 1991-07-17 | Motorola Inc. | Semiconducteur device having high energy sustaining capability and a temperature compensated sustaining voltage |
| EP0414499A3 (en) * | 1989-08-22 | 1991-07-31 | Motorola, Inc. | Semiconductor structure with closely coupled substrate temperature sense element |
| EP0622850A1 (en) * | 1993-04-30 | 1994-11-02 | International Business Machines Corporation | An electrostatic discharge protect diode for silicon-on-insulator technology |
Also Published As
| Publication number | Publication date |
|---|---|
| SE379117B (enrdf_load_stackoverflow) | 1975-09-22 |
| GB1380466A (en) | 1975-01-15 |
| JPS5138587B1 (enrdf_load_stackoverflow) | 1976-10-22 |
| IT951315B (it) | 1973-06-30 |
| FR2145460B1 (enrdf_load_stackoverflow) | 1977-01-14 |
| AU4099372A (en) | 1973-10-18 |
| AU471347B2 (en) | 1973-10-18 |
| NL7204607A (enrdf_load_stackoverflow) | 1973-01-16 |
| BE781698A (fr) | 1972-07-31 |
| DE2215850A1 (de) | 1973-02-08 |
| CA941515A (en) | 1974-02-05 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |