GB1380466A - Gate protective device for insulated gate fieldeffect transistors - Google Patents

Gate protective device for insulated gate fieldeffect transistors

Info

Publication number
GB1380466A
GB1380466A GB1497872A GB1497872A GB1380466A GB 1380466 A GB1380466 A GB 1380466A GB 1497872 A GB1497872 A GB 1497872A GB 1497872 A GB1497872 A GB 1497872A GB 1380466 A GB1380466 A GB 1380466A
Authority
GB
United Kingdom
Prior art keywords
diodes
gate
film
semi
insulating material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1497872A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1380466A publication Critical patent/GB1380466A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
GB1497872A 1971-07-12 1972-03-30 Gate protective device for insulated gate fieldeffect transistors Expired GB1380466A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16147871A 1971-07-12 1971-07-12

Publications (1)

Publication Number Publication Date
GB1380466A true GB1380466A (en) 1975-01-15

Family

ID=22581334

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1497872A Expired GB1380466A (en) 1971-07-12 1972-03-30 Gate protective device for insulated gate fieldeffect transistors

Country Status (10)

Country Link
JP (1) JPS5138587B1 (enrdf_load_stackoverflow)
AU (1) AU471347B2 (enrdf_load_stackoverflow)
BE (1) BE781698A (enrdf_load_stackoverflow)
CA (1) CA941515A (enrdf_load_stackoverflow)
DE (1) DE2215850A1 (enrdf_load_stackoverflow)
FR (1) FR2145460B1 (enrdf_load_stackoverflow)
GB (1) GB1380466A (enrdf_load_stackoverflow)
IT (1) IT951315B (enrdf_load_stackoverflow)
NL (1) NL7204607A (enrdf_load_stackoverflow)
SE (1) SE379117B (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0060635A3 (en) * 1981-02-27 1983-08-03 Hitachi, Ltd. A semiconductor integrated circuit device including a protection element
US5005061A (en) * 1990-02-05 1991-04-02 Motorola, Inc. Avalanche stress protected semiconductor device having variable input impedance
US5365099A (en) * 1988-12-02 1994-11-15 Motorola, Inc. Semiconductor device having high energy sustaining capability and a temperature compensated sustaining voltage
DE102013215427B4 (de) 2012-08-06 2023-03-30 Denso Corporation Diode

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2404922A1 (fr) * 1977-09-30 1979-04-27 Radiotechnique Compelec Dispositif semi-conducteur formant cellule de memoire morte programmable
JPS5825264A (ja) * 1981-08-07 1983-02-15 Hitachi Ltd 絶縁ゲート型半導体装置
US5025298A (en) * 1989-08-22 1991-06-18 Motorola, Inc. Semiconductor structure with closely coupled substrate temperature sense element
EP0622850B1 (en) * 1993-04-30 1999-04-21 International Business Machines Corporation Process for making an electrostatic discharge protect diode for silicon-on-insulator technology

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728591A (en) * 1971-09-03 1973-04-17 Rca Corp Gate protective device for insulated gate field-effect transistors

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0060635A3 (en) * 1981-02-27 1983-08-03 Hitachi, Ltd. A semiconductor integrated circuit device including a protection element
US5365099A (en) * 1988-12-02 1994-11-15 Motorola, Inc. Semiconductor device having high energy sustaining capability and a temperature compensated sustaining voltage
US5631187A (en) * 1988-12-02 1997-05-20 Motorola, Inc. Method for making semiconductor device having high energy sustaining capability and a temperature compensated sustaining voltage
US5005061A (en) * 1990-02-05 1991-04-02 Motorola, Inc. Avalanche stress protected semiconductor device having variable input impedance
DE102013215427B4 (de) 2012-08-06 2023-03-30 Denso Corporation Diode

Also Published As

Publication number Publication date
SE379117B (enrdf_load_stackoverflow) 1975-09-22
JPS5138587B1 (enrdf_load_stackoverflow) 1976-10-22
IT951315B (it) 1973-06-30
FR2145460B1 (enrdf_load_stackoverflow) 1977-01-14
AU4099372A (en) 1973-10-18
AU471347B2 (en) 1973-10-18
NL7204607A (enrdf_load_stackoverflow) 1973-01-16
BE781698A (fr) 1972-07-31
DE2215850A1 (de) 1973-02-08
FR2145460A1 (enrdf_load_stackoverflow) 1973-02-23
CA941515A (en) 1974-02-05

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee