FR2133892A1 - - Google Patents

Info

Publication number
FR2133892A1
FR2133892A1 FR7213772A FR7213772A FR2133892A1 FR 2133892 A1 FR2133892 A1 FR 2133892A1 FR 7213772 A FR7213772 A FR 7213772A FR 7213772 A FR7213772 A FR 7213772A FR 2133892 A1 FR2133892 A1 FR 2133892A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7213772A
Other languages
French (fr)
Other versions
FR2133892B1 (h
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19712119059 external-priority patent/DE2119059C3/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2133892A1 publication Critical patent/FR2133892A1/fr
Application granted granted Critical
Publication of FR2133892B1 publication Critical patent/FR2133892B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
FR7213772A 1971-04-20 1972-04-19 Expired FR2133892B1 (h)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19712119059 DE2119059C3 (de) 1971-04-20 Speicher mit aus M OS-Feldeffekttransistoren aufgebauten Speicherzellen
US00359573A US3848236A (en) 1971-04-20 1973-05-11 Threshold circuit

Publications (2)

Publication Number Publication Date
FR2133892A1 true FR2133892A1 (h) 1972-12-01
FR2133892B1 FR2133892B1 (h) 1976-10-29

Family

ID=25760988

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7213772A Expired FR2133892B1 (h) 1971-04-20 1972-04-19

Country Status (5)

Country Link
US (2) US3765002A (h)
FR (1) FR2133892B1 (h)
GB (1) GB1388601A (h)
LU (1) LU65183A1 (h)
NL (1) NL7205270A (h)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0257912A3 (en) * 1986-08-29 1989-08-23 Kabushiki Kaisha Toshiba Static semiconductor memory device

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3765002A (en) * 1971-04-20 1973-10-09 Siemens Ag Accelerated bit-line discharge of a mosfet memory
FR2258783B1 (h) * 1974-01-25 1977-09-16 Valentin Camille
US3946368A (en) * 1974-12-27 1976-03-23 Intel Corporation System for compensating voltage for a CCD sensing circuit
US3965460A (en) * 1975-01-02 1976-06-22 Motorola, Inc. MOS speed-up circuit
US3932848A (en) * 1975-01-20 1976-01-13 Intel Corporation Feedback circuit for allowing rapid charging and discharging of a sense node in a static memory
US4150308A (en) * 1977-10-25 1979-04-17 Motorola, Inc. CMOS level shifter
DE2926514A1 (de) * 1979-06-30 1981-01-15 Ibm Deutschland Elektrische speicheranordnung und verfahren zu ihrem betrieb
EP0031583B1 (en) 1979-12-26 1988-08-17 Kabushiki Kaisha Toshiba A driver circuit for charge coupled device
US4291392A (en) * 1980-02-06 1981-09-22 Mostek Corporation Timing of active pullup for dynamic semiconductor memory
JPS5837636B2 (ja) * 1980-07-31 1983-08-17 富士通株式会社 半導体記憶装置
JPS5841596B2 (ja) * 1980-11-28 1983-09-13 富士通株式会社 スタティック型半導体記憶装置
JPH0831278B2 (ja) * 1981-03-09 1996-03-27 富士通株式会社 メモリ回路
US4389705A (en) * 1981-08-21 1983-06-21 Mostek Corporation Semiconductor memory circuit with depletion data transfer transistor
US4477885A (en) * 1982-01-18 1984-10-16 Fairchild Camera & Instrument Corporation Current dump circuit for bipolar random access memories
JPS5916195A (ja) * 1982-07-19 1984-01-27 Toshiba Corp 半導体記憶装置
JPS59151400A (ja) * 1983-02-17 1984-08-29 Mitsubishi Electric Corp 半導体記憶装置
JPS6134619A (ja) * 1984-07-26 1986-02-18 Mitsubishi Electric Corp Ｍｏｓトランジスタ回路
US4675846A (en) * 1984-12-17 1987-06-23 International Business Machines Corporation Random access memory
JP2504743B2 (ja) * 1985-03-18 1996-06-05 日本電気株式会社 半導体記憶装置
NL8602450A (nl) * 1986-09-29 1988-04-18 Philips Nv Geintegreerde geheugenschakeling met een enkelvoudige-schrijfbus circuit.
JP2621176B2 (ja) * 1987-05-14 1997-06-18 ソニー株式会社 ワンチツプマイクロコンピユータ
JPH01140496A (ja) * 1987-11-27 1989-06-01 Nec Corp 半導体記憶装置
FR2659165A1 (fr) * 1990-03-05 1991-09-06 Sgs Thomson Microelectronics Memoire ultra-rapide comportant un limiteur de la tension de drain des cellules.
JPH04238197A (ja) * 1991-01-22 1992-08-26 Nec Corp センスアンプ回路
US5412606A (en) * 1994-03-29 1995-05-02 At&T Corp. Memory precharge technique
EP0756285B1 (en) * 1995-07-28 2000-07-05 STMicroelectronics S.r.l. Modulated slope signal generation circuit, particularly for latch data sensing arrangements
EP0756379B1 (en) * 1995-07-28 2003-09-24 STMicroelectronics S.r.l. Unbalanced latch and fuse circuit including the same
TW297126B (en) * 1995-09-13 1997-02-01 Siemens Ag Arrangement of memory cells arranged in the form of a matrix
US6654301B2 (en) * 2001-09-27 2003-11-25 Sun Microsystems, Inc. Multiple discharge capable bit line
US7177212B2 (en) * 2004-01-23 2007-02-13 Agere Systems Inc. Method and apparatus for reducing leakage current in a read only memory device using shortened precharge phase
US7480183B2 (en) * 2006-07-05 2009-01-20 Panasonic Corporation Semiconductor memory device, and read method and read circuit for the same
US7808827B2 (en) * 2007-11-06 2010-10-05 Spansion Llc Controlled bit line discharge for channel erases in nonvolatile memory
US9715345B2 (en) * 2014-04-25 2017-07-25 Micron Technology, Inc. Apparatuses and methods for memory management

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3364362A (en) * 1963-10-07 1968-01-16 Bunker Ramo Memory selection system
US3440444A (en) * 1965-12-30 1969-04-22 Rca Corp Driver-sense circuit arrangement

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3467952A (en) * 1966-02-09 1969-09-16 Nippon Electric Co Field effect transistor information storage circuit
US3765002A (en) * 1971-04-20 1973-10-09 Siemens Ag Accelerated bit-line discharge of a mosfet memory

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3364362A (en) * 1963-10-07 1968-01-16 Bunker Ramo Memory selection system
US3440444A (en) * 1965-12-30 1969-04-22 Rca Corp Driver-sense circuit arrangement

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE US "IEEE JOURNAL OF SOLID-STATE CIRCUITS", VOLUME SC5, NO.5, OCTOBRE 1970, PAGES 181 A 186, ARTICLE "THREE-TRANSISTOR-CELL 1024-BITS 500-NS MOS RAM" PAR REGITZ ET KAPP *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0257912A3 (en) * 1986-08-29 1989-08-23 Kabushiki Kaisha Toshiba Static semiconductor memory device

Also Published As

Publication number Publication date
FR2133892B1 (h) 1976-10-29
GB1388601A (en) 1975-03-26
DE2119059B2 (de) 1976-09-23
DE2119059A1 (de) 1972-10-26
LU65183A1 (h) 1972-12-11
US3765002A (en) 1973-10-09
US3848236A (en) 1974-11-12
NL7205270A (h) 1972-10-24

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ST Notification of lapse