FR2130399A1 - - Google Patents

Info

Publication number
FR2130399A1
FR2130399A1 FR7209444A FR7209444A FR2130399A1 FR 2130399 A1 FR2130399 A1 FR 2130399A1 FR 7209444 A FR7209444 A FR 7209444A FR 7209444 A FR7209444 A FR 7209444A FR 2130399 A1 FR2130399 A1 FR 2130399A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7209444A
Other versions
FR2130399B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7103772A external-priority patent/NL7103772A/xx
Priority claimed from NL7108373A external-priority patent/NL7108373A/xx
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2130399A1 publication Critical patent/FR2130399A1/fr
Application granted granted Critical
Publication of FR2130399B1 publication Critical patent/FR2130399B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/02—Manually-operated control
    • H03G3/04—Manually-operated control in untuned amplifiers
    • H03G3/10—Manually-operated control in untuned amplifiers having semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/14—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/80—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
    • H04B10/806—Arrangements for feeding power
    • H04B10/807—Optical power feeding, i.e. transmitting power using an optical signal
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R25/00—Deaf-aid sets, i.e. electro-acoustic or electro-mechanical hearing aids; Electric tinnitus maskers providing an auditory perception

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Circuit Arrangements For Discharge Lamps (AREA)
FR7209444A 1971-03-20 1972-03-17 Expired FR2130399B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7103772A NL7103772A (fr) 1971-03-20 1971-03-20
NL7108373A NL7108373A (fr) 1971-06-18 1971-06-18

Publications (2)

Publication Number Publication Date
FR2130399A1 true FR2130399A1 (fr) 1972-11-03
FR2130399B1 FR2130399B1 (fr) 1977-09-02

Family

ID=26644637

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7209444A Expired FR2130399B1 (fr) 1971-03-20 1972-03-17

Country Status (13)

Country Link
JP (3) JPS5550390B1 (fr)
AR (1) AR196071A1 (fr)
AT (1) AT326193B (fr)
AU (1) AU467899B2 (fr)
BE (1) BE780961A (fr)
BR (1) BR7201587D0 (fr)
CA (3) CA964335A (fr)
CH (1) CH550487A (fr)
DE (1) DE2211384A1 (fr)
FR (1) FR2130399B1 (fr)
GB (1) GB1395032A (fr)
IT (1) IT953971B (fr)
SE (1) SE377735B (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4007474A (en) * 1972-12-29 1977-02-08 Sony Corporation Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion
US4027324A (en) * 1972-12-29 1977-05-31 Sony Corporation Bidirectional transistor
US4035824A (en) * 1974-04-18 1977-07-12 Sony Corporation Semiconductor device stabilized by an insulating layer formed on a semiconductor region having a low impurity concentration
FR2365211A1 (fr) * 1976-09-17 1978-04-14 Siemens Ag Circuit integre monolithique pour la production d'impulsions de longue duree
AT376844B (de) * 1972-12-29 1985-01-10 Sony Corp Halbleiterbauteil
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
FR2619959A1 (fr) * 1987-08-31 1989-03-03 Thomson Semiconducteurs Circuit de detection de lumiere

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5754969B2 (fr) * 1974-04-04 1982-11-20
JPS57658B2 (fr) * 1974-04-16 1982-01-07
JPS5714064B2 (fr) * 1974-04-25 1982-03-20
JPS5648983B2 (fr) * 1974-05-10 1981-11-19
JPS5718710B2 (fr) * 1974-05-10 1982-04-17
JPS52105786A (en) * 1976-03-01 1977-09-05 Mitsubishi Electric Corp Semiconductor device
DE2641912C3 (de) * 1976-09-17 1980-05-29 Siemens Ag, 1000 Berlin Und 8000 Muenchen Schaltungsanordnung zur Übertragung elektrischer Versorgungsleistungen
JPS5368990A (en) * 1976-12-01 1978-06-19 Fujitsu Ltd Production of semiconductor integrated circuit
JPS56150871A (en) * 1980-04-24 1981-11-21 Toshiba Corp Semiconductor device
GB2151843A (en) * 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices
JPS61154063A (ja) * 1984-12-26 1986-07-12 Toshiba Corp 光半導体装置およびその製造方法
JP2800827B2 (ja) * 1988-02-12 1998-09-21 浜松ホトニクス株式会社 光半導体装置およびその製造方法
GB2220316B (en) * 1988-05-05 1992-01-29 Plessey Co Plc Improvements in and relating to oscillators
DE102010039258B4 (de) 2010-08-12 2018-03-15 Infineon Technologies Austria Ag Transistorbauelement mit reduziertem Kurzschlussstrom

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2944165A (en) * 1956-11-15 1960-07-05 Otmar M Stuetzer Semionductive device powered by light
FR1308083A (fr) * 1960-10-14 1962-11-03 Int Standard Electric Corp Complexe semi-conducteur
FR1377412A (fr) * 1962-10-08 1964-11-06 Fairchild Camera Instr Co Transistor épitaxique inverse

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1050478A (fr) * 1962-10-08

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2944165A (en) * 1956-11-15 1960-07-05 Otmar M Stuetzer Semionductive device powered by light
FR1308083A (fr) * 1960-10-14 1962-11-03 Int Standard Electric Corp Complexe semi-conducteur
FR1377412A (fr) * 1962-10-08 1964-11-06 Fairchild Camera Instr Co Transistor épitaxique inverse

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
(REVUE US"IBM TECHNICAL DISCLOSURE BULLETIN",VOLUME 8,NO.4,SEPTEMBRE 1965",MAKING MONOLITHIC SEMICONDUCTOR STRUCTURES FOR INTEGRATED CIRCUITS USING COMPOSITE INSULATION AND JUNCTION ISOLATION TECHINIQUES,N.Y.DOO ET AL,PAGES 659-660 *
*REVUE US"ELECTRONICS,VOLUME 40,NO.7,3 AVRIL 1967,"HARD CELL",PAGE 44) *
1967,"HARD CELL",PAGE 44) *
ISOLATION TECHINIQUES,N.Y.DOO ET AL,PAGES 659-660 *
REVUE US"ELECTRONICS,VOLUME 40,NO.7,3 AVRIL *
REVUE US"IBM TECHNICAL DISCLOSURE BULLETIN",VOLUME 8,NO.4,SEPTEMBRE 1965",MAKING MONOLITHIC *
SEMICONDUCTOR STRUCTURES FOR INTEGRATED CIRCUITS USING COMPOSITE INSULATION AND JUNCTION *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4007474A (en) * 1972-12-29 1977-02-08 Sony Corporation Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion
US4027324A (en) * 1972-12-29 1977-05-31 Sony Corporation Bidirectional transistor
AT376844B (de) * 1972-12-29 1985-01-10 Sony Corp Halbleiterbauteil
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
US4035824A (en) * 1974-04-18 1977-07-12 Sony Corporation Semiconductor device stabilized by an insulating layer formed on a semiconductor region having a low impurity concentration
FR2365211A1 (fr) * 1976-09-17 1978-04-14 Siemens Ag Circuit integre monolithique pour la production d'impulsions de longue duree
FR2619959A1 (fr) * 1987-08-31 1989-03-03 Thomson Semiconducteurs Circuit de detection de lumiere
EP0306395A1 (fr) * 1987-08-31 1989-03-08 STMicroelectronics S.A. Circuit de détection de lumière
US4952796A (en) * 1987-08-31 1990-08-28 SGS-Thomson Microeleronics SA Light detection circuit having a junction reverse-biased by a current generator

Also Published As

Publication number Publication date
AU467899B2 (en) 1975-12-18
CH550487A (de) 1974-06-14
AU3997072A (en) 1973-09-20
DE2211384C2 (fr) 1989-06-15
SE377735B (fr) 1975-07-21
GB1395032A (en) 1975-05-21
JPS4736785A (fr) 1972-11-29
CA970068A (en) 1975-06-24
IT953971B (it) 1973-08-10
FR2130399B1 (fr) 1977-09-02
JPS5622144B2 (fr) 1981-05-23
DE2211384A1 (de) 1972-11-30
AT326193B (de) 1975-11-25
JPS5550390B1 (fr) 1980-12-17
JPS55160466A (en) 1980-12-13
CA973955A (en) 1975-09-02
ATA236072A (de) 1975-02-15
BE780961A (fr) 1972-09-20
CA964335A (en) 1975-03-11
AR196071A1 (es) 1973-11-30
JPS5622145B2 (fr) 1981-05-23
BR7201587D0 (pt) 1974-10-22
JPS55160465A (en) 1980-12-13

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Legal Events

Date Code Title Description
ST Notification of lapse