FR1377412A - Transistor épitaxique inverse - Google Patents

Transistor épitaxique inverse

Info

Publication number
FR1377412A
FR1377412A FR947498A FR947498A FR1377412A FR 1377412 A FR1377412 A FR 1377412A FR 947498 A FR947498 A FR 947498A FR 947498 A FR947498 A FR 947498A FR 1377412 A FR1377412 A FR 1377412A
Authority
FR
France
Prior art keywords
epitaxial transistor
reverse epitaxial
reverse
transistor
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR947498A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US228807A external-priority patent/US3244950A/en
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Priority to FR947498A priority Critical patent/FR1377412A/fr
Application granted granted Critical
Publication of FR1377412A publication Critical patent/FR1377412A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
FR947498A 1962-10-08 1963-09-13 Transistor épitaxique inverse Expired FR1377412A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR947498A FR1377412A (fr) 1962-10-08 1963-09-13 Transistor épitaxique inverse

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US228807A US3244950A (en) 1962-10-08 1962-10-08 Reverse epitaxial transistor
FR947498A FR1377412A (fr) 1962-10-08 1963-09-13 Transistor épitaxique inverse

Publications (1)

Publication Number Publication Date
FR1377412A true FR1377412A (fr) 1964-11-06

Family

ID=26203369

Family Applications (1)

Application Number Title Priority Date Filing Date
FR947498A Expired FR1377412A (fr) 1962-10-08 1963-09-13 Transistor épitaxique inverse

Country Status (1)

Country Link
FR (1) FR1377412A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1297763B (de) * 1964-07-18 1969-06-19 Fujitsu Ltd Verfahren zum Herstellen eines Transistors fuer sehr hohe Frequenzen
FR2048030A1 (fr) * 1969-06-30 1971-03-19 Ibm
FR2130399A1 (fr) * 1971-03-20 1972-11-03 Philips Nv

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1297763B (de) * 1964-07-18 1969-06-19 Fujitsu Ltd Verfahren zum Herstellen eines Transistors fuer sehr hohe Frequenzen
FR2048030A1 (fr) * 1969-06-30 1971-03-19 Ibm
FR2051769A1 (fr) * 1969-06-30 1971-04-09 Ibm
FR2130399A1 (fr) * 1971-03-20 1972-11-03 Philips Nv

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