FR2121405A1 - Integrated circuit with resistor(s) - applied without attacking silicon substrate with resistor-trimming etchant - Google Patents
Integrated circuit with resistor(s) - applied without attacking silicon substrate with resistor-trimming etchantInfo
- Publication number
- FR2121405A1 FR2121405A1 FR7100650A FR7100650A FR2121405A1 FR 2121405 A1 FR2121405 A1 FR 2121405A1 FR 7100650 A FR7100650 A FR 7100650A FR 7100650 A FR7100650 A FR 7100650A FR 2121405 A1 FR2121405 A1 FR 2121405A1
- Authority
- FR
- France
- Prior art keywords
- resistor
- layer
- sio2
- integrated circuit
- resistive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
- 238000009966 trimming Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 239000002253 acid Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7100650A FR2121405A1 (en) | 1971-01-11 | 1971-01-11 | Integrated circuit with resistor(s) - applied without attacking silicon substrate with resistor-trimming etchant |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7100650A FR2121405A1 (en) | 1971-01-11 | 1971-01-11 | Integrated circuit with resistor(s) - applied without attacking silicon substrate with resistor-trimming etchant |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2121405A1 true FR2121405A1 (en) | 1972-08-25 |
FR2121405B1 FR2121405B1 (fr) | 1973-11-30 |
Family
ID=9070057
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7100650A Granted FR2121405A1 (en) | 1971-01-11 | 1971-01-11 | Integrated circuit with resistor(s) - applied without attacking silicon substrate with resistor-trimming etchant |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2121405A1 (fr) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3067485A (en) * | 1958-08-13 | 1962-12-11 | Bell Telephone Labor Inc | Semiconductor diode |
FR1507098A (fr) * | 1966-01-03 | 1967-12-22 | Texas Instruments Inc | Procédé de stabilisation de dispositifs semi-conducteurs et dispositifs semiconducteurs obtenus |
FR1561857A (fr) * | 1966-11-07 | 1969-03-28 |
-
1971
- 1971-01-11 FR FR7100650A patent/FR2121405A1/fr active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3067485A (en) * | 1958-08-13 | 1962-12-11 | Bell Telephone Labor Inc | Semiconductor diode |
FR1507098A (fr) * | 1966-01-03 | 1967-12-22 | Texas Instruments Inc | Procédé de stabilisation de dispositifs semi-conducteurs et dispositifs semiconducteurs obtenus |
FR1561857A (fr) * | 1966-11-07 | 1969-03-28 |
Non-Patent Citations (3)
Title |
---|
(REVUE AMERICAINE SCP AND SOLID STATE TECHNOLOGY VOL.9,JANVIER 1966"THERMAL GROWTH AND CHEMICAL ETCHING OF SILICON DIOXIDE FILMS"CHAO CHENMAI ET AL PAGES 19-24) * |
ETCHING OF SILICON DIOXIDE FILMS"CHAO CHENMAI ET AL PAGES 19-24) * |
REVUE AMERICAINE SCP AND SOLID STATE TECHNOLOGY VOL.9,JANVIER 1966"THERMAL GROWTH AND CHEMICAL * |
Also Published As
Publication number | Publication date |
---|---|
FR2121405B1 (fr) | 1973-11-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56114319A (en) | Method for forming contact hole | |
US4075367A (en) | Semiconductor processing of silicon nitride | |
US3708403A (en) | Self-aligning electroplating mask | |
US3692574A (en) | Method of forming seeding sites on a semiconductor substrate | |
GB967002A (en) | Improvements in or relating to semiconductor devices | |
US3537921A (en) | Selective hydrofluoric acid etching and subsequent processing | |
FR2121405A1 (en) | Integrated circuit with resistor(s) - applied without attacking silicon substrate with resistor-trimming etchant | |
US3649503A (en) | Sputter etch mask | |
US3832230A (en) | Method for improving glass adherence to gold film | |
US3592707A (en) | Precision masking using silicon nitride and silicon oxide | |
JPS5664453A (en) | Manufacture of semiconductor device | |
JPS57204165A (en) | Manufacture of charge coupling element | |
GB1092740A (en) | A method of masking the surface of a substrate | |
SU517279A3 (ru) | Способ изготовлени полупроводникового прибора | |
ES365276A1 (es) | Un procedimiento para fabricar un dispositivo semiconduc- tor. | |
JPS6359531B2 (fr) | ||
KR910006544B1 (ko) | 접속창 형성방법 | |
JPS5350979A (en) | Method of treatment of thin oxide layer on silicon substrate | |
JPS57206071A (en) | Semiconductor device and manufacture thereof | |
FR2149384A1 (en) | Semiconductor component prodn - with automatic precision mask location esp for fets | |
JPS551157A (en) | Method of fabricating semiconductor device | |
GB1512029A (en) | Formation of thin layer patterns on a substrate | |
JPS57202754A (en) | Manufacture of semiconductor device | |
JPS5533084A (en) | Method of fabricating semiconductor device | |
JPS5478668A (en) | Manufacture of semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |