FR2119932A1 - - Google Patents

Info

Publication number
FR2119932A1
FR2119932A1 FR7140949A FR7140949A FR2119932A1 FR 2119932 A1 FR2119932 A1 FR 2119932A1 FR 7140949 A FR7140949 A FR 7140949A FR 7140949 A FR7140949 A FR 7140949A FR 2119932 A1 FR2119932 A1 FR 2119932A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7140949A
Other versions
FR2119932B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of FR2119932A1 publication Critical patent/FR2119932A1/fr
Application granted granted Critical
Publication of FR2119932B1 publication Critical patent/FR2119932B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
FR7140949A 1970-12-28 1971-11-16 Expired FR2119932B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10180570A 1970-12-28 1970-12-28

Publications (2)

Publication Number Publication Date
FR2119932A1 true FR2119932A1 (fr) 1972-08-11
FR2119932B1 FR2119932B1 (fr) 1976-10-29

Family

ID=22286501

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7140949A Expired FR2119932B1 (fr) 1970-12-28 1971-11-16

Country Status (9)

Country Link
US (1) US3699646A (fr)
JP (1) JPS5040835B1 (fr)
BE (1) BE775603A (fr)
CA (1) CA951437A (fr)
DE (1) DE2153103C3 (fr)
FR (1) FR2119932B1 (fr)
GB (1) GB1381602A (fr)
IT (1) IT944412B (fr)
NL (1) NL159534B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2389233A1 (fr) * 1977-04-29 1978-11-24 Ibm Procede de fabrication d'un transistor a effet de champ a porte isolee utilisant deux ou trois masques

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2225374B2 (de) * 1971-05-28 1977-06-02 Fujitsu Ltd., Kawasaki, Kanagawa (Japan) Verfahren zum herstellen eines mos-feldeffekttransistors
US4151635A (en) * 1971-06-16 1979-05-01 Signetics Corporation Method for making a complementary silicon gate MOS structure
US4157563A (en) * 1971-07-02 1979-06-05 U.S. Philips Corporation Semiconductor device
NL161305C (nl) * 1971-11-20 1980-01-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderin- richting.
JPS4859781A (fr) * 1971-11-25 1973-08-22
US3792384A (en) * 1972-01-24 1974-02-12 Motorola Inc Controlled loss capacitor
US3747200A (en) * 1972-03-31 1973-07-24 Motorola Inc Integrated circuit fabrication method
US3793090A (en) * 1972-11-21 1974-02-19 Ibm Method for stabilizing fet devices having silicon gates and composite nitride-oxide gate dielectrics
US3836409A (en) * 1972-12-07 1974-09-17 Fairchild Camera Instr Co Uniplanar ccd structure and method
US4041518A (en) * 1973-02-24 1977-08-09 Hitachi, Ltd. MIS semiconductor device and method of manufacturing the same
US4033797A (en) * 1973-05-21 1977-07-05 Hughes Aircraft Company Method of manufacturing a complementary metal-insulation-semiconductor circuit
US3853634A (en) * 1973-05-21 1974-12-10 Fairchild Camera Instr Co Self-aligned implanted barrier two-phase charge coupled devices
US3898105A (en) * 1973-10-25 1975-08-05 Mostek Corp Method for making FET circuits
US3969150A (en) * 1973-12-03 1976-07-13 Fairchild Camera And Instrument Corporation Method of MOS transistor manufacture
US3986903A (en) * 1974-03-13 1976-10-19 Intel Corporation Mosfet transistor and method of fabrication
US3899373A (en) * 1974-05-20 1975-08-12 Ibm Method for forming a field effect device
US4016587A (en) * 1974-12-03 1977-04-05 International Business Machines Corporation Raised source and drain IGFET device and method
US4037307A (en) * 1975-03-21 1977-07-26 Bell Telephone Laboratories, Incorporated Methods for making transistor structures
US4037308A (en) * 1975-03-21 1977-07-26 Bell Telephone Laboratories, Incorporated Methods for making transistor structures
US4037309A (en) * 1975-03-21 1977-07-26 Bell Telephone Laboratories, Incorporated Methods for making transistor structures
US4016016A (en) * 1975-05-22 1977-04-05 Rca Corporation Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices
NL7510903A (nl) * 1975-09-17 1977-03-21 Philips Nv Werkwijze voor het vervaardigen van een halfgelei- derinrichting, en inrichting vervaardigd volgens de werkwijze.
JPS5268376A (en) * 1975-12-05 1977-06-07 Nec Corp Semiconductor device
US4197632A (en) * 1975-12-05 1980-04-15 Nippon Electric Co., Ltd. Semiconductor device
US4013489A (en) * 1976-02-10 1977-03-22 Intel Corporation Process for forming a low resistance interconnect in MOS N-channel silicon gate integrated circuit
US4102714A (en) * 1976-04-23 1978-07-25 International Business Machines Corporation Process for fabricating a low breakdown voltage device for polysilicon gate technology
JPS5917529B2 (ja) * 1977-11-29 1984-04-21 富士通株式会社 半導体装置の製造方法
US4192059A (en) * 1978-06-06 1980-03-11 Rockwell International Corporation Process for and structure of high density VLSI circuits, having inherently self-aligned gates and contacts for FET devices and conducting lines
DE3036869C2 (de) * 1979-10-01 1985-09-05 Hitachi, Ltd., Tokio/Tokyo Integrierte Halbleiterschaltung und Schaltkreisaktivierverfahren
US4240845A (en) * 1980-02-04 1980-12-23 International Business Machines Corporation Method of fabricating random access memory device
US4476478A (en) * 1980-04-24 1984-10-09 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor read only memory and method of making the same
US4406049A (en) * 1980-12-11 1983-09-27 Rockwell International Corporation Very high density cells comprising a ROM and method of manufacturing same
JPS5827363A (ja) * 1981-08-10 1983-02-18 Fujitsu Ltd 電界効果トランジスタの製造法
NL8105920A (nl) * 1981-12-31 1983-07-18 Philips Nv Halfgeleiderinrichting en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
US4658496A (en) * 1984-11-29 1987-04-21 Siemens Aktiengesellschaft Method for manufacturing VLSI MOS-transistor circuits
US4648175A (en) * 1985-06-12 1987-03-10 Ncr Corporation Use of selectively deposited tungsten for contact formation and shunting metallization
US5236852A (en) * 1992-09-24 1993-08-17 Motorola, Inc. Method for contacting a semiconductor device
ATE238610T1 (de) * 1994-03-03 2003-05-15 Rohm Corp Niederspannungs-eintransistor-flash-eeprom-zell mit fowler-nordheim programmier- und löschung
US6261978B1 (en) 1999-02-22 2001-07-17 Motorola, Inc. Process for forming semiconductor device with thick and thin films
JP2004502297A (ja) * 2000-06-27 2004-01-22 ダルサ、コーポレーション 電荷結合イメージセンサの製造方法
US10313622B2 (en) 2016-04-06 2019-06-04 Kla-Tencor Corporation Dual-column-parallel CCD sensor and inspection systems using a sensor
US10778925B2 (en) 2016-04-06 2020-09-15 Kla-Tencor Corporation Multiple column per channel CCD sensor architecture for inspection and metrology

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1597169A (fr) * 1968-01-29 1970-06-22

Family Cites Families (4)

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Publication number Priority date Publication date Assignee Title
DE1544273A1 (de) * 1965-12-13 1969-09-04 Siemens Ag Verfahren zum Eindiffundieren von aus der Gasphase dargebotenem Dotierungsmaterial in einen Halbleitergrundkristall
US3544399A (en) * 1966-10-26 1970-12-01 Hughes Aircraft Co Insulated gate field-effect transistor (igfet) with semiconductor gate electrode
US3566518A (en) * 1967-10-13 1971-03-02 Gen Electric Method for fabricating field-effect transistor devices and integrated circuit modules containing the same by selective diffusion of activator impurities through preselected portions of passivating-insulating films
US3576478A (en) * 1969-07-22 1971-04-27 Philco Ford Corp Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1597169A (fr) * 1968-01-29 1970-06-22

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
(REVUE INTERNATIONALE"SOLID-STATE ELECTRONICS",VOLUME 13,AOUT 1970,"SILICON GATE TECHNOLOGY". F.FAGGIN ET T.KLEIN PAGES 1125-1144.) *
F.FAGGIN ET T.KLEIN PAGES 1125-1144.) *
REVUE INTERNATIONALE"SOLID-STATE ELECTRONICS",VOLUME 13,AOUT 1970,"SILICON GATE TECHNOLOGY". *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2389233A1 (fr) * 1977-04-29 1978-11-24 Ibm Procede de fabrication d'un transistor a effet de champ a porte isolee utilisant deux ou trois masques

Also Published As

Publication number Publication date
FR2119932B1 (fr) 1976-10-29
NL7117040A (fr) 1972-06-30
BE775603A (fr) 1972-03-16
CA951437A (en) 1974-07-16
DE2153103B2 (de) 1975-03-06
DE2153103C3 (de) 1975-10-16
US3699646A (en) 1972-10-24
GB1381602A (en) 1975-01-22
IT944412B (it) 1973-04-20
NL159534B (nl) 1979-02-15
DE2153103A1 (de) 1972-07-13
JPS5040835B1 (fr) 1975-12-26

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