FR2119930A1 - - Google Patents

Info

Publication number
FR2119930A1
FR2119930A1 FR7140205A FR7140205A FR2119930A1 FR 2119930 A1 FR2119930 A1 FR 2119930A1 FR 7140205 A FR7140205 A FR 7140205A FR 7140205 A FR7140205 A FR 7140205A FR 2119930 A1 FR2119930 A1 FR 2119930A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7140205A
Other languages
French (fr)
Other versions
FR2119930B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2119930A1 publication Critical patent/FR2119930A1/fr
Application granted granted Critical
Publication of FR2119930B1 publication Critical patent/FR2119930B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
FR7140205A 1970-12-31 1971-11-04 Expired FR2119930B1 (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10325070A 1970-12-31 1970-12-31
US05/512,781 US3983022A (en) 1970-12-31 1974-10-07 Process for planarizing a surface

Publications (2)

Publication Number Publication Date
FR2119930A1 true FR2119930A1 (enExample) 1972-08-11
FR2119930B1 FR2119930B1 (enExample) 1974-08-19

Family

ID=26800239

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7140205A Expired FR2119930B1 (enExample) 1970-12-31 1971-11-04

Country Status (4)

Country Link
US (1) US3983022A (enExample)
DE (1) DE2164838C3 (enExample)
FR (1) FR2119930B1 (enExample)
GB (1) GB1361214A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0036780A3 (en) * 1980-03-24 1982-08-04 Hitachi, Ltd. Method of producing photoelectric transducers

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3804738A (en) * 1973-06-29 1974-04-16 Ibm Partial planarization of electrically insulative films by resputtering
US4036723A (en) * 1975-08-21 1977-07-19 International Business Machines Corporation RF bias sputtering method for producing insulating films free of surface irregularities
US4035276A (en) * 1976-04-29 1977-07-12 Ibm Corporation Making coplanar layers of thin films
NL7701559A (nl) * 1977-02-15 1978-08-17 Philips Nv Het maken van schuine hellingen aan metaal- patronen, alsmede substraat voor een geinte- greerde schakeling voorzien van een dergelijk patroon.
US4131533A (en) * 1977-12-30 1978-12-26 International Business Machines Corporation RF sputtering apparatus having floating anode shield
US4492717A (en) * 1981-07-27 1985-01-08 International Business Machines Corporation Method for forming a planarized integrated circuit
JPS5982746A (ja) * 1982-11-04 1984-05-12 Toshiba Corp 半導体装置の電極配線方法
US4470874A (en) * 1983-12-15 1984-09-11 International Business Machines Corporation Planarization of multi-level interconnected metallization system
US4515668A (en) * 1984-04-25 1985-05-07 Honeywell Inc. Method of forming a dielectric layer comprising a gettering material
US4797375A (en) * 1984-10-05 1989-01-10 Honeywell Inc. Fabrication of metal interconnect for semiconductor device
JPH0697660B2 (ja) * 1985-03-23 1994-11-30 日本電信電話株式会社 薄膜形成方法
EP0202572B1 (en) * 1985-05-13 1993-12-15 Nippon Telegraph And Telephone Corporation Method for forming a planarized aluminium thin film
US4690746A (en) * 1986-02-24 1987-09-01 Genus, Inc. Interlayer dielectric process
US4732658A (en) * 1986-12-03 1988-03-22 Honeywell Inc. Planarization of silicon semiconductor devices
US4756810A (en) * 1986-12-04 1988-07-12 Machine Technology, Inc. Deposition and planarizing methods and apparatus
US4874493A (en) * 1988-03-28 1989-10-17 Microelectronics And Computer Technology Corporation Method of deposition of metal into cavities on a substrate
US5545594A (en) * 1993-10-26 1996-08-13 Yazaki Meter Co., Ltd. Semiconductor sensor anodic-bonding process, wherein bonding of corrugation is prevented
US5393703A (en) * 1993-11-12 1995-02-28 Motorola, Inc. Process for forming a conductive layer for semiconductor devices
JP3971213B2 (ja) * 2002-03-11 2007-09-05 アルプス電気株式会社 キーボード入力装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1417695A (fr) * 1963-12-17 1965-11-12 Western Electric Co Enlèvement sélectif de matière en utilisant la pulvérisation cathodique

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE526527A (enExample) * 1953-02-17
US3287612A (en) * 1963-12-17 1966-11-22 Bell Telephone Labor Inc Semiconductor contacts and protective coatings for planar devices
US3479269A (en) * 1967-01-04 1969-11-18 Bell Telephone Labor Inc Method for sputter etching using a high frequency negative pulse train
GB1299452A (en) * 1969-02-21 1972-12-13 Smiths Industries Ltd Improvements in or relating to methods of machining
US3661761A (en) * 1969-06-02 1972-05-09 Ibm Rf sputtering apparatus for promoting resputtering of film during deposition
US3661747A (en) * 1969-08-11 1972-05-09 Bell Telephone Labor Inc Method for etching thin film materials by direct cathodic back sputtering
US3676317A (en) * 1970-10-23 1972-07-11 Stromberg Datagraphix Inc Sputter etching process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1417695A (fr) * 1963-12-17 1965-11-12 Western Electric Co Enlèvement sélectif de matière en utilisant la pulvérisation cathodique

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE"IBM TECHNICAL DISCLOSURE BULLETIN:,VOLUME 10,NO.12 MAI 1968,"CONTROL OF EDGE PROFILE IN SPUTTER ETCHING",R.M.VALLETTA,PAGE 1974.) *
PROFILE IN SPUTTER ETCHING",R.M.VALLETTA,PAGE 1974.) *
REVUE AMERICAINE"IBM TECHNICAL DISCLOSURE BULLETIN:,VOLUME 10,NO.12 MAI 1968,"CONTROL OF EDGE *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0036780A3 (en) * 1980-03-24 1982-08-04 Hitachi, Ltd. Method of producing photoelectric transducers

Also Published As

Publication number Publication date
DE2164838B2 (de) 1980-04-24
US3983022A (en) 1976-09-28
DE2164838C3 (de) 1980-12-18
FR2119930B1 (enExample) 1974-08-19
GB1361214A (en) 1974-07-24
DE2164838A1 (de) 1972-07-20

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Legal Events

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ST Notification of lapse