FR2088302A1 - - Google Patents

Info

Publication number
FR2088302A1
FR2088302A1 FR7115623A FR7115623A FR2088302A1 FR 2088302 A1 FR2088302 A1 FR 2088302A1 FR 7115623 A FR7115623 A FR 7115623A FR 7115623 A FR7115623 A FR 7115623A FR 2088302 A1 FR2088302 A1 FR 2088302A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7115623A
Other languages
French (fr)
Other versions
FR2088302B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2088302A1 publication Critical patent/FR2088302A1/fr
Application granted granted Critical
Publication of FR2088302B1 publication Critical patent/FR2088302B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
FR7115623A 1970-05-04 1971-04-30 Expired FR2088302B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3413770A 1970-05-04 1970-05-04

Publications (2)

Publication Number Publication Date
FR2088302A1 true FR2088302A1 (enrdf_load_stackoverflow) 1972-01-07
FR2088302B1 FR2088302B1 (enrdf_load_stackoverflow) 1976-12-03

Family

ID=21874544

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7115623A Expired FR2088302B1 (enrdf_load_stackoverflow) 1970-05-04 1971-04-30

Country Status (7)

Country Link
JP (1) JPS4913909B1 (enrdf_load_stackoverflow)
BE (1) BE766651A (enrdf_load_stackoverflow)
CA (1) CA921617A (enrdf_load_stackoverflow)
DE (1) DE2120832C3 (enrdf_load_stackoverflow)
FR (1) FR2088302B1 (enrdf_load_stackoverflow)
GB (1) GB1299811A (enrdf_load_stackoverflow)
MY (1) MY7400018A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2337941A1 (fr) * 1976-01-12 1977-08-05 Rca Corp Procede de fabrication d'un oxyde hybride

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5739058B2 (enrdf_load_stackoverflow) * 1973-05-07 1982-08-19
JPS5299538U (enrdf_load_stackoverflow) * 1976-01-26 1977-07-27
DE3005384C2 (de) * 1979-02-15 1994-10-27 Texas Instruments Inc Verfahren zum Herstellen einer monolithischen integrierten Halbleiterschaltung
JPS6118348U (ja) * 1984-07-04 1986-02-03 シャープ株式会社 石油燃焼器具

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1913718A1 (de) * 1968-03-20 1969-10-09 Rca Corp Verfahren zur Herstellung eines Halbleiterbauelements

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL210216A (enrdf_load_stackoverflow) * 1955-12-02
BE562973A (enrdf_load_stackoverflow) * 1956-12-06 1900-01-01

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1913718A1 (de) * 1968-03-20 1969-10-09 Rca Corp Verfahren zur Herstellung eines Halbleiterbauelements

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE"JOURNAL OF THE ELECTROCHEMICAL SOCIETY",VOLUME 118,NO 1,JANVIER 1971."USE OF HCL GETTERING IN SILICON DEVICE PROCESSING"P.H.ROBINSON ET AL.PAGES 141-143.) *
HCL GETTERING IN SILICON DEVICE PROCESSING"P.H.ROBINSON ET AL.PAGES 141-143.) *
REVUE AMERICAINE"JOURNAL OF THE ELECTROCHEMICAL SOCIETY",VOLUME 118,NO 1,JANVIER 1971."USE OF *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2337941A1 (fr) * 1976-01-12 1977-08-05 Rca Corp Procede de fabrication d'un oxyde hybride

Also Published As

Publication number Publication date
BE766651A (fr) 1971-10-01
CA921617A (en) 1973-02-20
DE2120832B2 (de) 1978-11-30
DE2120832A1 (de) 1971-11-25
MY7400018A (en) 1974-12-31
GB1299811A (en) 1972-12-13
JPS4913909B1 (enrdf_load_stackoverflow) 1974-04-03
FR2088302B1 (enrdf_load_stackoverflow) 1976-12-03
DE2120832C3 (de) 1982-06-03

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