FR2076731A6 - Using gaseous dopant introduced at molten zone - Google Patents
Using gaseous dopant introduced at molten zoneInfo
- Publication number
- FR2076731A6 FR2076731A6 FR7002682A FR7002682A FR2076731A6 FR 2076731 A6 FR2076731 A6 FR 2076731A6 FR 7002682 A FR7002682 A FR 7002682A FR 7002682 A FR7002682 A FR 7002682A FR 2076731 A6 FR2076731 A6 FR 2076731A6
- Authority
- FR
- France
- Prior art keywords
- molten zone
- gaseous dopant
- dopant introduced
- diameter
- gaseous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
- C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7002682A FR2076731A6 (en) | 1969-07-21 | 1970-01-26 | Using gaseous dopant introduced at molten zone |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR6924719A FR2052131A5 (fr) | 1969-07-21 | 1969-07-21 | |
| FR7002682A FR2076731A6 (en) | 1969-07-21 | 1970-01-26 | Using gaseous dopant introduced at molten zone |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2076731A6 true FR2076731A6 (en) | 1971-10-15 |
Family
ID=9049611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7002682A Expired FR2076731A6 (en) | 1969-07-21 | 1970-01-26 | Using gaseous dopant introduced at molten zone |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2076731A6 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0415559A1 (fr) * | 1989-07-31 | 1991-03-06 | Shin-Etsu Handotai Company Limited | Appareillage pour la croissance de monocristaux |
-
1970
- 1970-01-26 FR FR7002682A patent/FR2076731A6/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0415559A1 (fr) * | 1989-07-31 | 1991-03-06 | Shin-Etsu Handotai Company Limited | Appareillage pour la croissance de monocristaux |
| US5059401A (en) * | 1989-07-31 | 1991-10-22 | Shin-Etsu Handotai Co., Ltd. | Monocrystal growing apparatus |
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