GB1258125A - - Google Patents

Info

Publication number
GB1258125A
GB1258125A GB1258125DA GB1258125A GB 1258125 A GB1258125 A GB 1258125A GB 1258125D A GB1258125D A GB 1258125DA GB 1258125 A GB1258125 A GB 1258125A
Authority
GB
United Kingdom
Prior art keywords
carrier gas
semi
halogen derivatives
conductor
main carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1258125A publication Critical patent/GB1258125A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
GB1258125D 1968-04-01 1969-03-31 Expired GB1258125A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CS244768 1968-04-01

Publications (1)

Publication Number Publication Date
GB1258125A true GB1258125A (fr) 1971-12-22

Family

ID=5361638

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1258125D Expired GB1258125A (fr) 1968-04-01 1969-03-31

Country Status (4)

Country Link
JP (1) JPS492787B1 (fr)
DE (1) DE1915692A1 (fr)
GB (1) GB1258125A (fr)
NL (1) NL6904893A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1579481A2 (fr) * 2002-06-26 2005-09-28 Semequip, Inc. Dispositif d'implantation ionique et procede de fabrication de semi-conducteurs par implantation d'agregats d'ions d'hydrure de bore
CN1973346B (zh) * 2002-06-26 2011-05-18 山米奎普公司 一种离子植入装置和一种通过植入氢化硼簇离子制造半导体的方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016133205A1 (fr) 2015-02-20 2016-08-25 株式会社日立製作所 Procédé d'ajustement de champ magnétique

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1579481A2 (fr) * 2002-06-26 2005-09-28 Semequip, Inc. Dispositif d'implantation ionique et procede de fabrication de semi-conducteurs par implantation d'agregats d'ions d'hydrure de bore
EP1579481A4 (fr) * 2002-06-26 2008-02-27 Semequip Inc Dispositif d'implantation ionique et procede de fabrication de semi-conducteurs par implantation d'agregats d'ions d'hydrure de bore
US7491953B2 (en) 2002-06-26 2009-02-17 Semequip, Inc. Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
CN1973346B (zh) * 2002-06-26 2011-05-18 山米奎普公司 一种离子植入装置和一种通过植入氢化硼簇离子制造半导体的方法
US8071958B2 (en) 2002-06-26 2011-12-06 Semequip, Inc. Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
US8410459B2 (en) 2002-06-26 2013-04-02 Semequip, Inc. Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
US8618514B2 (en) 2002-06-26 2013-12-31 Semequip, Inc. Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions

Also Published As

Publication number Publication date
DE1915692A1 (de) 1969-12-18
NL6904893A (fr) 1969-10-03
JPS492787B1 (fr) 1974-01-22

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees