FR1517751A - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur

Info

Publication number
FR1517751A
FR1517751A FR74320A FR74320A FR1517751A FR 1517751 A FR1517751 A FR 1517751A FR 74320 A FR74320 A FR 74320A FR 74320 A FR74320 A FR 74320A FR 1517751 A FR1517751 A FR 1517751A
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR74320A
Other languages
English (en)
French (fr)
Inventor
Clive Arthur Peirson Foxell
John Gilbert Summers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR1517751A publication Critical patent/FR1517751A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10W20/40—
    • H10W72/90—
    • H10W72/536—
    • H10W72/5522—
    • H10W72/59—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
FR74320A 1965-08-26 1966-08-26 Dispositif semi-conducteur Expired FR1517751A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB36655/65A GB1161782A (en) 1965-08-26 1965-08-26 Improvements in Semiconductor Devices.

Publications (1)

Publication Number Publication Date
FR1517751A true FR1517751A (fr) 1968-03-22

Family

ID=10390066

Family Applications (1)

Application Number Title Priority Date Filing Date
FR74320A Expired FR1517751A (fr) 1965-08-26 1966-08-26 Dispositif semi-conducteur

Country Status (11)

Country Link
US (1) US3443169A (ref)
AT (1) AT269218B (ref)
BE (1) BE686070A (ref)
CH (1) CH455960A (ref)
DE (1) DE1541505A1 (ref)
DK (1) DK117164B (ref)
ES (1) ES330535A1 (ref)
FR (1) FR1517751A (ref)
GB (1) GB1161782A (ref)
NL (1) NL6611943A (ref)
SE (1) SE338106B (ref)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2012013A1 (ref) * 1968-06-29 1970-03-13 Philips Nv

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3534267A (en) * 1966-12-30 1970-10-13 Texas Instruments Inc Integrated 94 ghz. local oscillator and mixer
US3691481A (en) * 1967-08-22 1972-09-12 Kogyo Gijutsuin Negative resistance element
US3518749A (en) * 1968-02-23 1970-07-07 Rca Corp Method of making gunn-effect devices
US3967305A (en) * 1969-03-27 1976-06-29 Mcdonnell Douglas Corporation Multichannel junction field-effect transistor and process
US3660733A (en) * 1969-10-29 1972-05-02 Fernando Zhozevich Vilf Homogeneous semiconductor with interrelated antibarrier contacts
US3755752A (en) * 1971-04-26 1973-08-28 Raytheon Co Back-to-back semiconductor high frequency device
US4238763A (en) * 1977-08-10 1980-12-09 National Research Development Corporation Solid state microwave devices with small active contact and large passive contact
DE2837283C2 (de) * 1978-08-25 1980-08-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen Planare, in eine Wellenleitung eingefügte Schottky-Diode für hohe Grenzfrequenz
CN107017310B (zh) * 2017-03-17 2020-01-07 山东大学 一种高功率低噪音的平面耿氏二极管及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL121810C (ref) * 1955-11-04
US3065391A (en) * 1961-01-23 1962-11-20 Gen Electric Semiconductor devices
GB1070261A (en) * 1963-06-10 1967-06-01 Ibm A semiconductor device
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements
US3359504A (en) * 1964-03-25 1967-12-19 Westinghouse Electric Corp Inductanceless frequency selective signal system utilizing transport delay
US3322581A (en) * 1965-10-24 1967-05-30 Texas Instruments Inc Fabrication of a metal base transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2012013A1 (ref) * 1968-06-29 1970-03-13 Philips Nv

Also Published As

Publication number Publication date
SE338106B (ref) 1971-08-30
GB1161782A (en) 1969-08-20
US3443169A (en) 1969-05-06
BE686070A (ref) 1967-02-27
AT269218B (de) 1969-03-10
NL6611943A (ref) 1967-02-27
CH455960A (de) 1968-05-15
DE1541505A1 (de) 1970-04-02
DK117164B (da) 1970-03-23
ES330535A1 (es) 1967-09-16

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