DK117164B - Gunn-effekt-komponent. - Google Patents

Gunn-effekt-komponent.

Info

Publication number
DK117164B
DK117164B DK431166AA DK431166A DK117164B DK 117164 B DK117164 B DK 117164B DK 431166A A DK431166A A DK 431166AA DK 431166 A DK431166 A DK 431166A DK 117164 B DK117164 B DK 117164B
Authority
DK
Denmark
Prior art keywords
effect component
gunn effect
gunn
component
effect
Prior art date
Application number
DK431166AA
Other languages
Danish (da)
English (en)
Inventor
C Foxell
J Summers
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of DK117164B publication Critical patent/DK117164B/da

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10W20/40—
    • H10W72/90—
    • H10W72/536—
    • H10W72/5522—
    • H10W72/59—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
DK431166AA 1965-08-26 1966-08-23 Gunn-effekt-komponent. DK117164B (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB36655/65A GB1161782A (en) 1965-08-26 1965-08-26 Improvements in Semiconductor Devices.

Publications (1)

Publication Number Publication Date
DK117164B true DK117164B (da) 1970-03-23

Family

ID=10390066

Family Applications (1)

Application Number Title Priority Date Filing Date
DK431166AA DK117164B (da) 1965-08-26 1966-08-23 Gunn-effekt-komponent.

Country Status (11)

Country Link
US (1) US3443169A (ref)
AT (1) AT269218B (ref)
BE (1) BE686070A (ref)
CH (1) CH455960A (ref)
DE (1) DE1541505A1 (ref)
DK (1) DK117164B (ref)
ES (1) ES330535A1 (ref)
FR (1) FR1517751A (ref)
GB (1) GB1161782A (ref)
NL (1) NL6611943A (ref)
SE (1) SE338106B (ref)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3534267A (en) * 1966-12-30 1970-10-13 Texas Instruments Inc Integrated 94 ghz. local oscillator and mixer
US3691481A (en) * 1967-08-22 1972-09-12 Kogyo Gijutsuin Negative resistance element
US3518749A (en) * 1968-02-23 1970-07-07 Rca Corp Method of making gunn-effect devices
NL6809255A (ref) * 1968-06-29 1969-12-31
US3967305A (en) * 1969-03-27 1976-06-29 Mcdonnell Douglas Corporation Multichannel junction field-effect transistor and process
US3660733A (en) * 1969-10-29 1972-05-02 Fernando Zhozevich Vilf Homogeneous semiconductor with interrelated antibarrier contacts
US3755752A (en) * 1971-04-26 1973-08-28 Raytheon Co Back-to-back semiconductor high frequency device
US4238763A (en) * 1977-08-10 1980-12-09 National Research Development Corporation Solid state microwave devices with small active contact and large passive contact
DE2837283C2 (de) * 1978-08-25 1980-08-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen Planare, in eine Wellenleitung eingefügte Schottky-Diode für hohe Grenzfrequenz
CN107017310B (zh) * 2017-03-17 2020-01-07 山东大学 一种高功率低噪音的平面耿氏二极管及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL121810C (ref) * 1955-11-04
US3065391A (en) * 1961-01-23 1962-11-20 Gen Electric Semiconductor devices
GB1070261A (en) * 1963-06-10 1967-06-01 Ibm A semiconductor device
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements
US3359504A (en) * 1964-03-25 1967-12-19 Westinghouse Electric Corp Inductanceless frequency selective signal system utilizing transport delay
US3322581A (en) * 1965-10-24 1967-05-30 Texas Instruments Inc Fabrication of a metal base transistor

Also Published As

Publication number Publication date
SE338106B (ref) 1971-08-30
GB1161782A (en) 1969-08-20
US3443169A (en) 1969-05-06
BE686070A (ref) 1967-02-27
AT269218B (de) 1969-03-10
NL6611943A (ref) 1967-02-27
CH455960A (de) 1968-05-15
DE1541505A1 (de) 1970-04-02
FR1517751A (fr) 1968-03-22
ES330535A1 (es) 1967-09-16

Similar Documents

Publication Publication Date Title
DK114096B (da) Plov.
FI49366C (fi) Hiomisväline.
DK116327B (da) Vodskovl.
DK117164B (da) Gunn-effekt-komponent.
DK114517B (da) Kostald.
DK114803B (da) Plov.
DK113540B (da) Høvender.
DK108090C (da) Rambuk.
DK115355B (da) Rullejalousi.
DK111253B (da) Ajlespreder.
DK119120B (da) Gunn-effekt-komponent.
DK112088B (da) Graveskovl.
DK125154B (da) Molluscocid.
DE1917315U (de) Bunsenbrenner.
ES117385Y (es) Electrozocalo.
ES115377Y (es) Colgador-cepillo.
ES113320Y (es) Bigudi graduable.
DK110219C (da) Ekkolod.
ES112036Y (es) Placa-llavero.
ES112196Y (es) Mueble-bar.
ES112538Y (es) Vagon-tolva.
FI46012C (fi) Höyrykupu.
ES112746Y (es) Tapon-candelabro.
ES120217Y (es) Medias-pantalon.
ES112783Y (es) Percha-comodin plancha-pantalones.