FR1487814A - élément redresseur commandé à semiconducteurs de type pnpn - Google Patents

élément redresseur commandé à semiconducteurs de type pnpn

Info

Publication number
FR1487814A
FR1487814A FR70958A FR70958A FR1487814A FR 1487814 A FR1487814 A FR 1487814A FR 70958 A FR70958 A FR 70958A FR 70958 A FR70958 A FR 70958A FR 1487814 A FR1487814 A FR 1487814A
Authority
FR
France
Prior art keywords
type semiconductor
controlled rectifier
rectifier element
semiconductor controlled
pnpn type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR70958A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1487814A publication Critical patent/FR1487814A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/1016—Anode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
FR70958A 1965-07-30 1966-07-26 élément redresseur commandé à semiconducteurs de type pnpn Expired FR1487814A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1965S0098547 DE1514520B1 (de) 1965-07-30 1965-07-30 Steuerbares Halbleiterbauelement

Publications (1)

Publication Number Publication Date
FR1487814A true FR1487814A (fr) 1967-07-07

Family

ID=7521553

Family Applications (1)

Application Number Title Priority Date Filing Date
FR70958A Expired FR1487814A (fr) 1965-07-30 1966-07-26 élément redresseur commandé à semiconducteurs de type pnpn

Country Status (10)

Country Link
US (1) US3513363A (fr)
AT (1) AT258417B (fr)
BE (1) BE684737A (fr)
CH (1) CH442533A (fr)
DE (1) DE1514520B1 (fr)
DK (1) DK119620B (fr)
FR (1) FR1487814A (fr)
GB (1) GB1107068A (fr)
NL (1) NL6610582A (fr)
NO (1) NO116680B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3874956A (en) * 1972-05-15 1975-04-01 Mitsubishi Electric Corp Method for making a semiconductor switching device
CH580339A5 (fr) * 1974-12-23 1976-09-30 Bbc Brown Boveri & Cie
US4112458A (en) * 1976-01-26 1978-09-05 Cutler-Hammer, Inc. Silicon thyristor sensitive to low temperature with thermal switching characteristics at temperatures less than 50° C
JPS5912026B2 (ja) * 1977-10-14 1984-03-19 株式会社日立製作所 サイリスタ
DE3573357D1 (en) * 1984-12-27 1989-11-02 Siemens Ag Semiconductor power switch

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980832A (en) * 1959-06-10 1961-04-18 Westinghouse Electric Corp High current npnp switch
US3209428A (en) * 1961-07-20 1965-10-05 Westinghouse Electric Corp Process for treating semiconductor devices

Also Published As

Publication number Publication date
US3513363A (en) 1970-05-19
NO116680B (fr) 1969-05-05
DE1514520B1 (de) 1971-04-01
AT258417B (de) 1967-11-27
DK119620B (da) 1971-02-01
NL6610582A (fr) 1967-01-31
GB1107068A (en) 1968-03-20
CH442533A (de) 1967-08-31
BE684737A (fr) 1967-01-30

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