FR1503052A - Laser perfectionné à diode semi-conductrice - Google Patents
Laser perfectionné à diode semi-conductriceInfo
- Publication number
- FR1503052A FR1503052A FR85098A FR85098A FR1503052A FR 1503052 A FR1503052 A FR 1503052A FR 85098 A FR85098 A FR 85098A FR 85098 A FR85098 A FR 85098A FR 1503052 A FR1503052 A FR 1503052A
- Authority
- FR
- France
- Prior art keywords
- diode laser
- semiconductor diode
- advanced semiconductor
- advanced
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7221865 | 1965-11-26 | ||
JP6970766 | 1966-10-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1503052A true FR1503052A (fr) | 1967-11-24 |
Family
ID=26410872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR85098A Expired FR1503052A (fr) | 1965-11-26 | 1966-11-25 | Laser perfectionné à diode semi-conductrice |
Country Status (4)
Country | Link |
---|---|
US (1) | US3768037A (fr) |
DE (1) | DE1564096B1 (fr) |
FR (1) | FR1503052A (fr) |
GB (1) | GB1145870A (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4027319A (en) * | 1969-05-22 | 1977-05-31 | Texas Instruments Incorporated | Schottky barrier phototransistor |
GB1382072A (en) * | 1972-02-03 | 1975-01-29 | Ferranti Ltd | Solar cells |
CA1005556A (en) * | 1974-09-17 | 1977-02-15 | Northern Electric Company Limited | Monolithic light-emitting diode and modulator |
US3975751A (en) * | 1974-09-19 | 1976-08-17 | Northern Electric Company Limited | Monolithic light-emitting diode and modulator |
US3952265A (en) * | 1974-10-29 | 1976-04-20 | Hughes Aircraft Company | Monolithic dual mode emitter-detector terminal for optical waveguide transmission lines |
US4349906A (en) * | 1979-09-18 | 1982-09-14 | Xerox Corporation | Optically controlled integrated current diode lasers |
JPS5710992A (en) * | 1980-06-24 | 1982-01-20 | Sumitomo Electric Ind Ltd | Semiconductor device and manufacture therefor |
US4700353A (en) * | 1985-08-12 | 1987-10-13 | Cornell Research Foundation, Inc. | Active modulation of quantum well lasers by energy shifts in gain spectra with applied electric field |
US4754141A (en) * | 1985-08-22 | 1988-06-28 | High Technology Sensors, Inc. | Modulated infrared source |
US4878222A (en) * | 1988-08-05 | 1989-10-31 | Eastman Kodak Company | Diode laser with improved means for electrically modulating the emitted light beam intensity including turn-on and turn-off and electrically controlling the position of the emitted laser beam spot |
US5151915A (en) * | 1990-12-27 | 1992-09-29 | Xerox Corporation | Array and method of operating a modulated solid state laser array with reduced thermal crosstalk |
US5267255A (en) * | 1992-02-25 | 1993-11-30 | Xerox Corporation | Array and method of operating a modulated solid state laser array with reduced thermal crosstalk |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3257626A (en) * | 1962-12-31 | 1966-06-21 | Ibm | Semiconductor laser structures |
NL302497A (fr) * | 1962-12-31 | |||
US3341937A (en) * | 1963-02-20 | 1967-09-19 | Ibm | Crystalline injection laser device manufacture |
US3349475A (en) * | 1963-02-21 | 1967-10-31 | Ibm | Planar injection laser structure |
US3295911A (en) * | 1963-03-15 | 1967-01-03 | Bell Telephone Labor Inc | Semiconductor light modulators |
US3354406A (en) * | 1963-04-22 | 1967-11-21 | Rca Corp | Element and apparatus for generating coherent radiation |
US3305685A (en) * | 1963-11-07 | 1967-02-21 | Univ California | Semiconductor laser and method |
US3303431A (en) * | 1964-02-10 | 1967-02-07 | Ibm | Coupled semiconductor injection laser devices |
US3427563A (en) * | 1964-05-13 | 1969-02-11 | Ibm | Multistable device operating on the principle of stimulated emission of radiation |
US3430160A (en) * | 1965-06-11 | 1969-02-25 | Us Air Force | Laser digital device |
US3439289A (en) * | 1965-07-08 | 1969-04-15 | Us Air Force | Semiconductor laser components for digital logic |
US3483480A (en) * | 1965-10-19 | 1969-12-09 | Nippon Electric Co | Semiconductor compound lasers |
-
1966
- 1966-11-16 US US00594933A patent/US3768037A/en not_active Expired - Lifetime
- 1966-11-17 GB GB51607/66A patent/GB1145870A/en not_active Expired
- 1966-11-25 DE DE19661564096D patent/DE1564096B1/de active Pending
- 1966-11-25 FR FR85098A patent/FR1503052A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1145870A (en) | 1969-03-19 |
DE1564096B1 (de) | 1970-07-16 |
US3768037A (en) | 1973-10-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR1504868A (fr) | Microcircuit semiconducteur | |
FR1423482A (fr) | Lasers à semi-conducteur couplés | |
FR1503052A (fr) | Laser perfectionné à diode semi-conductrice | |
FR1478264A (fr) | Laser | |
FR1535445A (fr) | Laser | |
CH435478A (de) | Halbleiter-Laser | |
FR1463734A (fr) | Lampes à semi-conducteur | |
CH472783A (de) | Lawinendiode | |
FR1478897A (fr) | Laser à semi-conducteur | |
DK124644B (da) | Optoelektronisk halvleder. | |
AT265432B (de) | Halbleiterbauelement | |
CH444318A (de) | Halbleiterbauelement | |
FR1547287A (fr) | Diode semiconductrice | |
FR1503124A (fr) | Télémètre à laser | |
FR1487814A (fr) | élément redresseur commandé à semiconducteurs de type pnpn | |
FR1481737A (fr) | Semi-conducteur | |
CH449799A (de) | Diodenlaser | |
CH455050A (de) | Halbleiterdiode | |
CH446539A (de) | Halbleiterbauelement | |
FR1477089A (fr) | Redresseur à semi-conducteurs | |
AT266218B (de) | Halbleiterbauelement | |
FR1499074A (fr) | Diode de déclenchement semi-conductrice | |
FR1459083A (fr) | Diode semi-conductrice à surface orientée | |
FR1396723A (fr) | Diode semi-conductrice | |
FR1417783A (fr) | Laser à semi-conducteur à injection |