DK116887B - Halvlederelement. - Google Patents

Halvlederelement.

Info

Publication number
DK116887B
DK116887B DK577367AA DK577367A DK116887B DK 116887 B DK116887 B DK 116887B DK 577367A A DK577367A A DK 577367AA DK 577367 A DK577367 A DK 577367A DK 116887 B DK116887 B DK 116887B
Authority
DK
Denmark
Prior art keywords
semiconductor element
semiconductor
Prior art date
Application number
DK577367AA
Other languages
English (en)
Inventor
W Keller
K Raithel
K Reuschel
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK116887B publication Critical patent/DK116887B/da

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DK577367AA 1967-01-25 1967-11-20 Halvlederelement. DK116887B (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0107983 1967-01-25

Publications (1)

Publication Number Publication Date
DK116887B true DK116887B (da) 1970-02-23

Family

ID=7528495

Family Applications (1)

Application Number Title Priority Date Filing Date
DK577367AA DK116887B (da) 1967-01-25 1967-11-20 Halvlederelement.

Country Status (11)

Country Link
US (1) US3461359A (da)
AT (1) AT273300B (da)
BE (1) BE709801A (da)
CH (1) CH495630A (da)
DE (1) DE1614410B2 (da)
DK (1) DK116887B (da)
FR (1) FR1551485A (da)
GB (1) GB1200975A (da)
NL (1) NL6800940A (da)
NO (1) NO120538B (da)
SE (1) SE323750B (da)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3860947A (en) * 1970-03-19 1975-01-14 Hiroshi Gamo Thyristor with gold doping profile
US3668480A (en) * 1970-07-21 1972-06-06 Ibm Semiconductor device having many fold iv characteristics
US3874956A (en) * 1972-05-15 1975-04-01 Mitsubishi Electric Corp Method for making a semiconductor switching device
CH553480A (de) * 1972-10-31 1974-08-30 Siemens Ag Tyristor.
DE2310570C3 (de) * 1973-03-02 1980-08-07 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines überkopfzündfesten Thyristors
US3988762A (en) * 1974-05-28 1976-10-26 General Electric Company Minority carrier isolation barriers for semiconductor devices
US3988772A (en) * 1974-05-28 1976-10-26 General Electric Company Current isolation means for integrated power devices
US3988771A (en) * 1974-05-28 1976-10-26 General Electric Company Spatial control of lifetime in semiconductor device
DE2508802A1 (de) * 1975-02-28 1976-09-09 Siemens Ag Verfahren zum abscheiden von elementarem silicium
JPS5942989B2 (ja) * 1977-01-24 1984-10-18 株式会社日立製作所 高耐圧半導体素子およびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1052447A (da) * 1962-09-15
GB1060474A (en) * 1963-03-27 1967-03-01 Siemens Ag The production of monocrystalline semiconductor bodies of silicon or germanium
DE1439347A1 (de) * 1964-03-18 1968-11-07 Siemens Ag Verfahren zum Herstellen eines Halbleiterstromtores vom pnpn-Typ
US3356543A (en) * 1964-12-07 1967-12-05 Rca Corp Method of decreasing the minority carrier lifetime by diffusion

Also Published As

Publication number Publication date
DE1614410B2 (de) 1973-12-13
GB1200975A (en) 1970-08-05
FR1551485A (da) 1968-12-27
CH495630A (de) 1970-08-31
US3461359A (en) 1969-08-12
BE709801A (da) 1968-07-24
NO120538B (da) 1970-11-02
NL6800940A (da) 1968-07-26
AT273300B (de) 1969-08-11
DE1614410A1 (de) 1970-07-02
SE323750B (da) 1970-05-11

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