FR1448026A - Procédé pour la fabrication d'un redresseur commandé à semiconducteur du type pnpn - Google Patents

Procédé pour la fabrication d'un redresseur commandé à semiconducteur du type pnpn

Info

Publication number
FR1448026A
FR1448026A FR9598A FR9598A FR1448026A FR 1448026 A FR1448026 A FR 1448026A FR 9598 A FR9598 A FR 9598A FR 9598 A FR9598 A FR 9598A FR 1448026 A FR1448026 A FR 1448026A
Authority
FR
France
Prior art keywords
manufacturing
controlled rectifier
semiconductor controlled
pnpn type
pnpn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR9598A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1448026A publication Critical patent/FR1448026A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/062—Gold diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
FR9598A 1964-03-18 1965-03-17 Procédé pour la fabrication d'un redresseur commandé à semiconducteur du type pnpn Expired FR1448026A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES0090097 1964-03-18
DES0092536 1964-08-08

Publications (1)

Publication Number Publication Date
FR1448026A true FR1448026A (fr) 1966-08-05

Family

ID=25997602

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9598A Expired FR1448026A (fr) 1964-03-18 1965-03-17 Procédé pour la fabrication d'un redresseur commandé à semiconducteur du type pnpn

Country Status (5)

Country Link
US (1) US3342651A (fr)
CH (1) CH441510A (fr)
DE (2) DE1439347A1 (fr)
FR (1) FR1448026A (fr)
GB (1) GB1092727A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2003347A1 (fr) * 1968-03-06 1969-11-07 Westinghouse Electric Corp

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356543A (en) * 1964-12-07 1967-12-05 Rca Corp Method of decreasing the minority carrier lifetime by diffusion
US3473976A (en) * 1966-03-31 1969-10-21 Ibm Carrier lifetime killer doping process for semiconductor structures and the product formed thereby
US3487276A (en) * 1966-11-15 1969-12-30 Westinghouse Electric Corp Thyristor having improved operating characteristics at high temperature
DE1614410B2 (de) * 1967-01-25 1973-12-13 Siemens Ag, 1000 Berlin U. 8000 Muenchen Halbleiterbauelement
US3507051A (en) * 1968-02-26 1970-04-21 Willard R Calvert Regeneration process
US3466509A (en) * 1968-03-26 1969-09-09 Hewlett Packard Co Photoconductor material and apparatus
US3860947A (en) * 1970-03-19 1975-01-14 Hiroshi Gamo Thyristor with gold doping profile
US3662232A (en) * 1970-12-10 1972-05-09 Fmc Corp Semiconductor devices having low minority carrier lifetime and process for producing same
US3874956A (en) * 1972-05-15 1975-04-01 Mitsubishi Electric Corp Method for making a semiconductor switching device
JPH0691244B2 (ja) * 1984-04-27 1994-11-14 三菱電機株式会社 ゲートターンオフサイリスタの製造方法
US4717588A (en) * 1985-12-23 1988-01-05 Motorola Inc. Metal redistribution by rapid thermal processing
MX9604872A (es) 1995-10-27 1997-04-30 Basf Corp Composiciones de poliol que proporcionan resistencia mejorada a las llamas y factores k curados a las espumas de poliuretano.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2827436A (en) * 1956-01-16 1958-03-18 Bell Telephone Labor Inc Method of improving the minority carrier lifetime in a single crystal silicon body
NL125999C (fr) * 1958-07-17
NL241982A (fr) * 1958-08-13 1900-01-01
US3272661A (en) * 1962-07-23 1966-09-13 Hitachi Ltd Manufacturing method of a semi-conductor device by controlling the recombination velocity

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2003347A1 (fr) * 1968-03-06 1969-11-07 Westinghouse Electric Corp

Also Published As

Publication number Publication date
DE1439347A1 (de) 1968-11-07
DE1439429A1 (de) 1968-11-07
US3342651A (en) 1967-09-19
CH441510A (de) 1967-08-15
GB1092727A (en) 1967-11-29

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