FR2003347A1 - - Google Patents
Info
- Publication number
- FR2003347A1 FR2003347A1 FR6906255A FR6906255A FR2003347A1 FR 2003347 A1 FR2003347 A1 FR 2003347A1 FR 6906255 A FR6906255 A FR 6906255A FR 6906255 A FR6906255 A FR 6906255A FR 2003347 A1 FR2003347 A1 FR 2003347A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
-
- A—HUMAN NECESSITIES
- A41—WEARING APPAREL
- A41C—CORSETS; BRASSIERES
- A41C1/00—Corsets or girdles
- A41C1/02—Elastic corsets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Textile Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US71084668A | 1968-03-06 | 1968-03-06 | |
US83773269A | 1969-06-30 | 1969-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2003347A1 true FR2003347A1 (fr) | 1969-11-07 |
FR2003347B1 FR2003347B1 (fr) | 1974-05-03 |
Family
ID=27108537
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR6906255A Expired FR2003347B1 (fr) | 1968-03-06 | 1969-03-06 |
Country Status (3)
Country | Link |
---|---|
US (1) | US3513367A (fr) |
FR (1) | FR2003347B1 (fr) |
GB (1) | GB1196576A (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH526859A (de) * | 1970-11-02 | 1972-08-15 | Bbc Brown Boveri & Cie | Bistabiles Halbleiterbauelement |
JPS493583A (fr) * | 1972-04-20 | 1974-01-12 | ||
US3881963A (en) * | 1973-01-18 | 1975-05-06 | Westinghouse Electric Corp | Irradiation for fast switching thyristors |
US3988762A (en) * | 1974-05-28 | 1976-10-26 | General Electric Company | Minority carrier isolation barriers for semiconductor devices |
US3988771A (en) * | 1974-05-28 | 1976-10-26 | General Electric Company | Spatial control of lifetime in semiconductor device |
US3988772A (en) * | 1974-05-28 | 1976-10-26 | General Electric Company | Current isolation means for integrated power devices |
US3961350A (en) * | 1974-11-04 | 1976-06-01 | Hewlett-Packard Company | Method and chip configuration of high temperature pressure contact packaging of Schottky barrier diodes |
JPS5248986A (en) * | 1975-10-17 | 1977-04-19 | Mitsubishi Electric Corp | Semiconductor temperature sensitive switch element |
JPS5516497A (en) * | 1978-06-14 | 1980-02-05 | Gen Electric | Gate turnnoff semiconductor switching device |
DE3225084A1 (de) * | 1982-07-05 | 1984-01-05 | Roman Efimovič Tomilino Moskovskaja oblast' Smoljanskij | Bipolare transistortetrode |
JPS60119777A (ja) * | 1983-11-30 | 1985-06-27 | Mitsubishi Electric Corp | ゲ−トタ−ンオフサイリスタ |
GB2171555A (en) * | 1985-02-20 | 1986-08-28 | Philips Electronic Associated | Bipolar semiconductor device with implanted recombination region |
EP1746661A1 (fr) * | 2005-07-22 | 2007-01-24 | ABB Technology AG | Dispositif semi-conducteur de puissance |
CN110610858B (zh) * | 2018-06-15 | 2021-07-30 | 株洲中车时代半导体有限公司 | 一种门极换流晶闸管及其制造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1432255A (fr) * | 1964-05-06 | 1966-03-18 | Westinghouse Brake & Signal | Dispositif de commutation à conductibilité asymétrique |
FR1448026A (fr) * | 1964-03-18 | 1966-08-05 | Siemens Ag | Procédé pour la fabrication d'un redresseur commandé à semiconducteur du type pnpn |
FR1448685A (fr) * | 1964-10-24 | 1966-08-05 | Licentia Gmbh | élément semi-conducteur à comportement de fréquence amélioré et son procédé de fabrication |
GB1057810A (en) * | 1964-12-16 | 1967-02-08 | Siemens Ag | Process for the production of a thyristor of the pnpn-type |
FR1503221A (fr) * | 1965-12-06 | 1967-11-24 | Lucas Industries Ltd | Commutateur semi-conducteur et son procédé de fabrication |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL275617A (fr) * | 1961-03-10 | |||
CH437538A (de) * | 1965-12-22 | 1967-06-15 | Bbc Brown Boveri & Cie | Steuerbares Halbleiterelement |
US3440113A (en) * | 1966-09-19 | 1969-04-22 | Westinghouse Electric Corp | Process for diffusing gold into semiconductor material |
-
1969
- 1969-02-25 GB GB9926/69A patent/GB1196576A/en not_active Expired
- 1969-03-06 FR FR6906255A patent/FR2003347B1/fr not_active Expired
- 1969-06-30 US US837732A patent/US3513367A/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1448026A (fr) * | 1964-03-18 | 1966-08-05 | Siemens Ag | Procédé pour la fabrication d'un redresseur commandé à semiconducteur du type pnpn |
FR1432255A (fr) * | 1964-05-06 | 1966-03-18 | Westinghouse Brake & Signal | Dispositif de commutation à conductibilité asymétrique |
FR1448685A (fr) * | 1964-10-24 | 1966-08-05 | Licentia Gmbh | élément semi-conducteur à comportement de fréquence amélioré et son procédé de fabrication |
GB1057810A (en) * | 1964-12-16 | 1967-02-08 | Siemens Ag | Process for the production of a thyristor of the pnpn-type |
FR1503221A (fr) * | 1965-12-06 | 1967-11-24 | Lucas Industries Ltd | Commutateur semi-conducteur et son procédé de fabrication |
Also Published As
Publication number | Publication date |
---|---|
FR2003347B1 (fr) | 1974-05-03 |
GB1196576A (en) | 1970-07-01 |
US3513367A (en) | 1970-05-19 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |