FR1458019A - Procédé de fabrication d'un transistor à base métallique - Google Patents

Procédé de fabrication d'un transistor à base métallique

Info

Publication number
FR1458019A
FR1458019A FR42037A FR42037A FR1458019A FR 1458019 A FR1458019 A FR 1458019A FR 42037 A FR42037 A FR 42037A FR 42037 A FR42037 A FR 42037A FR 1458019 A FR1458019 A FR 1458019A
Authority
FR
France
Prior art keywords
manufacturing
metal
based transistor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR42037A
Other languages
English (en)
Inventor
Hartmut Michel
Gerd Seiter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Application granted granted Critical
Publication of FR1458019A publication Critical patent/FR1458019A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/142—Semiconductor-metal-semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
FR42037A 1964-12-15 1965-12-13 Procédé de fabrication d'un transistor à base métallique Expired FR1458019A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DET27622A DE1289188B (de) 1964-12-15 1964-12-15 Metallbasistransistor

Publications (1)

Publication Number Publication Date
FR1458019A true FR1458019A (fr) 1966-11-04

Family

ID=7553616

Family Applications (1)

Application Number Title Priority Date Filing Date
FR42037A Expired FR1458019A (fr) 1964-12-15 1965-12-13 Procédé de fabrication d'un transistor à base métallique

Country Status (3)

Country Link
US (1) US3424627A (fr)
DE (1) DE1289188B (fr)
FR (1) FR1458019A (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1172230A (en) * 1965-12-16 1969-11-26 Matsushita Electronics Corp A Method of Manufacturing Semiconductor Device
GB1107700A (en) * 1966-03-29 1968-03-27 Matsushita Electronics Corp A method for manufacturing semiconductor devices
GB1265017A (fr) * 1968-08-19 1972-03-01
GB1265018A (fr) * 1968-08-27 1972-03-01
US3786320A (en) * 1968-10-04 1974-01-15 Matsushita Electronics Corp Schottky barrier pressure sensitive semiconductor device with air space around periphery of metal-semiconductor junction
US3657029A (en) * 1968-12-31 1972-04-18 Texas Instruments Inc Platinum thin-film metallization method
US3751723A (en) * 1972-03-01 1973-08-07 Sprague Electric Co Hot carrier metal base transistor having a p-type emitter and an n-type collector
US3929527A (en) * 1974-06-11 1975-12-30 Us Army Molecular beam epitaxy of alternating metal-semiconductor films
US3987216A (en) * 1975-12-31 1976-10-19 International Business Machines Corporation Method of forming schottky barrier junctions having improved barrier height
US4758534A (en) * 1985-11-13 1988-07-19 Bell Communications Research, Inc. Process for producing porous refractory metal layers embedded in semiconductor devices
EP0252667B1 (fr) * 1986-06-30 1996-03-27 Nihon Sinku Gijutsu Kabushiki Kaisha Procédé de dépÔt en phase vapeur
US5427630A (en) * 1994-05-09 1995-06-27 International Business Machines Corporation Mask material for low temperature selective growth of silicon or silicon alloys

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE551335A (fr) * 1955-09-29
US2983854A (en) * 1960-04-05 1961-05-09 Bell Telephone Labor Inc Semiconductive device
BE603293A (fr) * 1960-05-02
NL282170A (fr) * 1961-08-17
FR1341703A (fr) * 1961-09-25 1963-11-02 Western Electric Co Dispositif à barrière métal semi-conducteur
NL283434A (fr) * 1961-09-25
US3254276A (en) * 1961-11-29 1966-05-31 Philco Corp Solid-state translating device with barrier-layers formed by thin metal and semiconductor material
US3324362A (en) * 1961-12-21 1967-06-06 Tassara Luigi Electrical components formed by thin metallic form on solid substrates
US3250967A (en) * 1961-12-22 1966-05-10 Rca Corp Solid state triode
US3372069A (en) * 1963-10-22 1968-03-05 Texas Instruments Inc Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor
US3287186A (en) * 1963-11-26 1966-11-22 Rca Corp Semiconductor devices and method of manufacture thereof
US3375418A (en) * 1964-09-15 1968-03-26 Sprague Electric Co S-m-s device with partial semiconducting layers
US3322581A (en) * 1965-10-24 1967-05-30 Texas Instruments Inc Fabrication of a metal base transistor

Also Published As

Publication number Publication date
DE1289188B (de) 1969-02-13
US3424627A (en) 1969-01-28

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