FR1341703A - Dispositif à barrière métal semi-conducteur - Google Patents

Dispositif à barrière métal semi-conducteur

Info

Publication number
FR1341703A
FR1341703A FR910184A FR910184A FR1341703A FR 1341703 A FR1341703 A FR 1341703A FR 910184 A FR910184 A FR 910184A FR 910184 A FR910184 A FR 910184A FR 1341703 A FR1341703 A FR 1341703A
Authority
FR
France
Prior art keywords
barrier device
metal barrier
semiconductor metal
semiconductor
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR910184A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US140533A external-priority patent/US3121809A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Priority to FR910184A priority Critical patent/FR1341703A/fr
Application granted granted Critical
Publication of FR1341703A publication Critical patent/FR1341703A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
FR910184A 1961-09-25 1962-09-21 Dispositif à barrière métal semi-conducteur Expired FR1341703A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR910184A FR1341703A (fr) 1961-09-25 1962-09-21 Dispositif à barrière métal semi-conducteur

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US140533A US3121809A (en) 1961-09-25 1961-09-25 Semiconductor device utilizing majority carriers with thin metal base between semiconductor materials
FR910184A FR1341703A (fr) 1961-09-25 1962-09-21 Dispositif à barrière métal semi-conducteur

Publications (1)

Publication Number Publication Date
FR1341703A true FR1341703A (fr) 1963-11-02

Family

ID=26197648

Family Applications (1)

Application Number Title Priority Date Filing Date
FR910184A Expired FR1341703A (fr) 1961-09-25 1962-09-21 Dispositif à barrière métal semi-conducteur

Country Status (1)

Country Link
FR (1) FR1341703A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1257290B (de) * 1964-07-08 1967-12-28 Telefunken Patent Verfahren zum Herstellen eines Halbleiterbauelements, insbesondere eines Transistors, mit einer Metallschicht zwischen zwei Halbleiterzonen
DE1289188B (de) * 1964-12-15 1969-02-13 Telefunken Patent Metallbasistransistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1257290B (de) * 1964-07-08 1967-12-28 Telefunken Patent Verfahren zum Herstellen eines Halbleiterbauelements, insbesondere eines Transistors, mit einer Metallschicht zwischen zwei Halbleiterzonen
DE1289188B (de) * 1964-12-15 1969-02-13 Telefunken Patent Metallbasistransistor

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