FR1319847A - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur

Info

Publication number
FR1319847A
FR1319847A FR894608A FR894608A FR1319847A FR 1319847 A FR1319847 A FR 1319847A FR 894608 A FR894608 A FR 894608A FR 894608 A FR894608 A FR 894608A FR 1319847 A FR1319847 A FR 1319847A
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR894608A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of FR1319847A publication Critical patent/FR1319847A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
FR894608A 1961-04-17 1962-04-16 Dispositif semi-conducteur Expired FR1319847A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US103583A US3210560A (en) 1961-04-17 1961-04-17 Semiconductor device

Publications (1)

Publication Number Publication Date
FR1319847A true FR1319847A (fr) 1963-03-01

Family

ID=22295948

Family Applications (1)

Application Number Title Priority Date Filing Date
FR894608A Expired FR1319847A (fr) 1961-04-17 1962-04-16 Dispositif semi-conducteur

Country Status (4)

Country Link
US (1) US3210560A (fr)
CH (1) CH414018A (fr)
DE (1) DE1210490B (fr)
FR (1) FR1319847A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1294558B (de) * 1961-06-07 1969-05-08 Westinghouse Electric Corp Hochspannungsgleichrichter und Verfahren zum Herstellen
GB1052447A (fr) * 1962-09-15
US3246172A (en) * 1963-03-26 1966-04-12 Richard J Sanford Four-layer semiconductor switch with means to provide recombination centers
US3397329A (en) * 1964-10-19 1968-08-13 Endevco Corp Measuring system
US4056726A (en) * 1975-10-01 1977-11-01 Princeton Gamma-Tech, Inc. Coaxial gamma ray detector and method therefor
US6584609B1 (en) * 2000-02-28 2003-06-24 Numerical Technologies, Inc. Method and apparatus for mixed-mode optical proximity correction
FR2987938A1 (fr) * 2012-03-12 2013-09-13 St Microelectronics Sa Dispositif electronique de protection contre les decharges electrostatiques, a structure concentrique

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1048359B (fr) * 1952-07-22
DE1063279B (de) * 1957-05-31 1959-08-13 Ibm Deutschland Halbleiteranordnung aus einem Halbleiterkoerper mit flaechenhaftem innerem pn-UEbergang und mit mehr als drei Elektroden
US2967793A (en) * 1959-02-24 1961-01-10 Westinghouse Electric Corp Semiconductor devices with bi-polar injection characteristics
US2919388A (en) * 1959-03-17 1959-12-29 Hoffman Electronics Corp Semiconductor devices

Also Published As

Publication number Publication date
DE1210490B (de) 1966-02-10
US3210560A (en) 1965-10-05
CH414018A (de) 1966-05-31

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