FR1430595A - Dispositif semi-conducteur à couche d'arrêt - Google Patents

Dispositif semi-conducteur à couche d'arrêt

Info

Publication number
FR1430595A
FR1430595A FR11124A FR11124A FR1430595A FR 1430595 A FR1430595 A FR 1430595A FR 11124 A FR11124 A FR 11124A FR 11124 A FR11124 A FR 11124A FR 1430595 A FR1430595 A FR 1430595A
Authority
FR
France
Prior art keywords
barrier layer
layer device
semiconductor barrier
semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR11124A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1430595A publication Critical patent/FR1430595A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/929—Electrical contact feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/934—Electrical process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/938—Vapor deposition or gas diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12583—Component contains compound of adjacent metal
    • Y10T428/1259—Oxide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611—Oxide-containing component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12778—Alternative base metals from diverse categories
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12812—Diverse refractory group metal-base components: alternative to or next to each other
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12889—Au-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12896—Ag-base component

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
FR11124A 1964-03-30 1965-03-29 Dispositif semi-conducteur à couche d'arrêt Expired FR1430595A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US355663A US3290127A (en) 1964-03-30 1964-03-30 Barrier diode with metal contact and method of making

Publications (1)

Publication Number Publication Date
FR1430595A true FR1430595A (fr) 1966-03-04

Family

ID=23398309

Family Applications (1)

Application Number Title Priority Date Filing Date
FR11124A Expired FR1430595A (fr) 1964-03-30 1965-03-29 Dispositif semi-conducteur à couche d'arrêt

Country Status (5)

Country Link
US (1) US3290127A (fr)
DE (1) DE1539078A1 (fr)
FR (1) FR1430595A (fr)
GB (1) GB1090311A (fr)
NL (1) NL6503038A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2007393A1 (fr) * 1968-04-05 1970-01-09 Matsushita Electronics Corp
FR2024110A1 (fr) * 1968-11-22 1970-08-28 Western Electric Co
FR2024111A1 (fr) * 1968-11-22 1970-08-28 Western Electric Co
FR2048035A1 (fr) * 1969-06-30 1971-03-19 Ibm
EP0013520A1 (fr) * 1978-12-28 1980-07-23 Lignes Telegraphiques Et Telephoniques L.T.T. Procédé perfectionné de fabrication de diodes Schottky et diodes de puissance ainsi réalisées

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3413527A (en) * 1964-10-02 1968-11-26 Gen Electric Conductive electrode for reducing the electric field in the region of the junction of a junction semiconductor device
US3463975A (en) * 1964-12-31 1969-08-26 Texas Instruments Inc Unitary semiconductor high speed switching device utilizing a barrier diode
US3484662A (en) * 1965-01-15 1969-12-16 North American Rockwell Thin film transistor on an insulating substrate
DE1283978B (de) * 1965-12-08 1968-11-28 Telefunken Patent Elektronisches Festkoerperbauelement mit durch Ladungstraegerinjektion steuerbarem elektrischem Widerstand
DE1283970B (de) * 1966-03-19 1968-11-28 Siemens Ag Metallischer Kontakt an einem Halbleiterbauelement
US3486086A (en) * 1966-07-08 1969-12-23 Richard W Soshea Surface barrier semiconductor limiter employing low barrier height metals on silicon
US3497773A (en) * 1967-02-20 1970-02-24 Westinghouse Electric Corp Passive circuit elements
US3495959A (en) * 1967-03-09 1970-02-17 Western Electric Co Electrical termination for a tantalum nitride film
US3445727A (en) * 1967-05-15 1969-05-20 Raytheon Co Semiconductor contact and interconnection structure
US3458778A (en) * 1967-05-29 1969-07-29 Microwave Ass Silicon semiconductor with metal-silicide heterojunction
US3483442A (en) * 1967-08-24 1969-12-09 Westinghouse Electric Corp Electrical contact for a hard solder electrical device
US3629776A (en) * 1967-10-24 1971-12-21 Nippon Kogaku Kk Sliding thin film resistance for measuring instruments
US3621344A (en) * 1967-11-30 1971-11-16 William M Portnoy Titanium-silicon rectifying junction
US3560809A (en) * 1968-03-04 1971-02-02 Hitachi Ltd Variable capacitance rectifying junction diode
GB1243247A (en) * 1968-03-04 1971-08-18 Texas Instruments Inc Ohmic contact and electrical interconnection system for electronic devices
US3770606A (en) * 1968-08-27 1973-11-06 Bell Telephone Labor Inc Schottky barrier diodes as impedance elements and method of making same
US3480412A (en) * 1968-09-03 1969-11-25 Fairchild Camera Instr Co Method of fabrication of solder reflow interconnections for face down bonding of semiconductor devices
GB1267388A (en) * 1968-12-04 1972-03-15 Matsushita Electric Ind Co Ltd Improvements in and relating to a semiconductor mechano-electrical transducer
US3590471A (en) * 1969-02-04 1971-07-06 Bell Telephone Labor Inc Fabrication of insulated gate field-effect transistors involving ion implantation
DE2237616C3 (de) * 1972-07-31 1982-09-16 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Einschmelzen eines Halbleiterelements in ein Glasgehäuse
DE2253830C3 (de) * 1972-11-03 1983-06-16 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen einer Solarzelle und Solarzellenbatterie
DE2409312C3 (de) * 1974-02-27 1981-01-08 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit einer auf der Halbleiteroberfläche angeordneten Metallschicht und Verfahren zu ihrer Herstellung
US4068022A (en) * 1974-12-10 1978-01-10 Western Electric Company, Inc. Methods of strengthening bonds
US4110488A (en) * 1976-04-09 1978-08-29 Rca Corporation Method for making schottky barrier diodes
FR2394894A1 (fr) * 1977-06-17 1979-01-12 Thomson Csf Dispositif de prise de contact sur un element semiconducteur
CA1138795A (fr) * 1980-02-19 1983-01-04 Goodrich (B.F.) Company (The) Glissoire d'evacuation et embarcation de sauvetage gonflables combinees
US4498096A (en) * 1981-01-30 1985-02-05 Motorola, Inc. Button rectifier package for non-planar die
US4980751A (en) * 1981-09-25 1990-12-25 International Business Machines Corporation Electrical multilayer contact for microelectronic structure
US4982244A (en) * 1982-12-20 1991-01-01 National Semiconductor Corporation Buried Schottky clamped transistor
US4543442A (en) * 1983-06-24 1985-09-24 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration GaAs Schottky barrier photo-responsive device and method of fabrication
US4647361A (en) * 1985-09-03 1987-03-03 International Business Machines Corporation Sputtering apparatus
US5254869A (en) * 1991-06-28 1993-10-19 Linear Technology Corporation Aluminum alloy/silicon chromium sandwich schottky diode
JP2006332230A (ja) * 2005-05-25 2006-12-07 Ecotron:Kk ショットキーバリアダイオード及びその製造方法
US7749877B2 (en) * 2006-03-07 2010-07-06 Siliconix Technology C. V. Process for forming Schottky rectifier with PtNi silicide Schottky barrier

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2973466A (en) * 1959-09-09 1961-02-28 Bell Telephone Labor Inc Semiconductor contact
US3200310A (en) * 1959-09-22 1965-08-10 Carman Lab Inc Glass encapsulated semiconductor device
US3158788A (en) * 1960-08-15 1964-11-24 Fairchild Camera Instr Co Solid-state circuitry having discrete regions of semi-conductor material isolated by an insulating material
US3065391A (en) * 1961-01-23 1962-11-20 Gen Electric Semiconductor devices
US3178270A (en) * 1962-05-15 1965-04-13 Bell Telephone Labor Inc Contact structure
NL294675A (fr) * 1962-06-29

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2007393A1 (fr) * 1968-04-05 1970-01-09 Matsushita Electronics Corp
FR2024110A1 (fr) * 1968-11-22 1970-08-28 Western Electric Co
FR2024111A1 (fr) * 1968-11-22 1970-08-28 Western Electric Co
FR2048035A1 (fr) * 1969-06-30 1971-03-19 Ibm
EP0013520A1 (fr) * 1978-12-28 1980-07-23 Lignes Telegraphiques Et Telephoniques L.T.T. Procédé perfectionné de fabrication de diodes Schottky et diodes de puissance ainsi réalisées
FR2445627A1 (fr) * 1978-12-28 1980-07-25 Lignes Telegraph Telephon Procede perfectionne de fabrication de diodes schottky et diodes de puissance ainsi realisees

Also Published As

Publication number Publication date
NL6503038A (fr) 1965-10-01
GB1090311A (en) 1967-11-08
DE1539078A1 (de) 1969-08-07
US3290127A (en) 1966-12-06

Similar Documents

Publication Publication Date Title
FR1430595A (fr) Dispositif semi-conducteur à couche d'arrêt
FR1479917A (fr) Dispositif semi-conducteur
FR1475436A (fr) Dispositif semi-conducteur
FR1473738A (fr) Dispositif à semi-conducteurs
FR1510752A (fr) Dispositif à semi-conducteurs
FR1486215A (fr) Dispositif à semi-conducteur
FR1489272A (fr) Dispositif semi-conducteur
FR1515458A (fr) Dispositif redresseur à semi-conducteurs en parallèle
FR1498176A (fr) Dispositif optoélectronique à semi-conducteurs
CH471467A (fr) Dispositif redresseur à semi-conducteur
FR1546423A (fr) Dispositif à semi-conducteur
FR1541894A (fr) Dispositif à semi-conducteurs
FR1475201A (fr) Dispositif plan à semi-conducteurs
FR1531714A (fr) Dispositif semi-conducteur du type à disques
FR1529195A (fr) Dispositif à semi-conducteur
FR1467614A (fr) Dispositif à semi-conducteurs
FR1485222A (fr) Dispositif à semi-conducteurs
FR1472985A (fr) Dispositif à semi-conducteur
FR1460267A (fr) Dispositif à semi-conducteur
FR1433200A (fr) Dispositif à semi-conducteur
FR1491183A (fr) Dispositif d'accouplement à sens unique
FR1471729A (fr) Dispositif semi-conducteur
FR1470898A (fr) Dispositif semi-conducteur
FR1505934A (fr) Dispositif à semiconducteurs
FR1484296A (fr) Dispositif à semi-conducteur