FR1339897A - Dispositif semiconducteur haute fréquence et son procédé de fabrication - Google Patents

Dispositif semiconducteur haute fréquence et son procédé de fabrication

Info

Publication number
FR1339897A
FR1339897A FR916187A FR916187A FR1339897A FR 1339897 A FR1339897 A FR 1339897A FR 916187 A FR916187 A FR 916187A FR 916187 A FR916187 A FR 916187A FR 1339897 A FR1339897 A FR 1339897A
Authority
FR
France
Prior art keywords
semiconductor device
high frequency
manufacturing process
frequency semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR916187A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1339897A publication Critical patent/FR1339897A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
FR916187A 1961-12-19 1962-11-21 Dispositif semiconducteur haute fréquence et son procédé de fabrication Expired FR1339897A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16059161A 1961-12-19 1961-12-19

Publications (1)

Publication Number Publication Date
FR1339897A true FR1339897A (fr) 1963-10-11

Family

ID=22577517

Family Applications (1)

Application Number Title Priority Date Filing Date
FR916187A Expired FR1339897A (fr) 1961-12-19 1962-11-21 Dispositif semiconducteur haute fréquence et son procédé de fabrication

Country Status (5)

Country Link
BE (1) BE626251A (pt)
DE (1) DE1439938A1 (pt)
FR (1) FR1339897A (pt)
GB (1) GB954534A (pt)
NL (1) NL285921A (pt)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3446995A (en) * 1964-05-27 1969-05-27 Ibm Semiconductor circuits,devices and methods of improving electrical characteristics of latter
DE1298194B (de) * 1964-12-23 1969-06-26 Ibm Elektrische Schaltungsplatte
US3600648A (en) * 1965-04-21 1971-08-17 Sylvania Electric Prod Semiconductor electrical translating device
US3651384A (en) * 1971-03-08 1972-03-21 Warren P Waters Planar schottky barrier

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1273698B (de) * 1964-01-08 1968-07-25 Telefunken Patent Halbleiteranordnung
CA941074A (en) * 1964-04-16 1974-01-29 Northern Electric Company Limited Semiconductor devices with field electrodes
DE1514562B2 (de) * 1965-09-07 1972-12-07 Semikron Gesellschaft fur Gleich richterbau und Elektronik mbH, 8500 Nurn berg Anordnung zur herstellung eines halbleiter-bauelementes

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3446995A (en) * 1964-05-27 1969-05-27 Ibm Semiconductor circuits,devices and methods of improving electrical characteristics of latter
DE1298194B (de) * 1964-12-23 1969-06-26 Ibm Elektrische Schaltungsplatte
US3600648A (en) * 1965-04-21 1971-08-17 Sylvania Electric Prod Semiconductor electrical translating device
US3651384A (en) * 1971-03-08 1972-03-21 Warren P Waters Planar schottky barrier

Also Published As

Publication number Publication date
DE1439938A1 (de) 1968-12-19
BE626251A (pt)
GB954534A (en) 1964-04-08
NL285921A (pt)

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