FR1229489A - Procédé de fabrication de corps par tirage hors d'un bain - Google Patents

Procédé de fabrication de corps par tirage hors d'un bain

Info

Publication number
FR1229489A
FR1229489A FR799725A FR799725A FR1229489A FR 1229489 A FR1229489 A FR 1229489A FR 799725 A FR799725 A FR 799725A FR 799725 A FR799725 A FR 799725A FR 1229489 A FR1229489 A FR 1229489A
Authority
FR
France
Prior art keywords
bath
drawing out
manufacturing bodies
bodies
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR799725A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR1229489A publication Critical patent/FR1229489A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/005—Simultaneous pulling of more than one crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR799725A 1958-07-11 1959-07-09 Procédé de fabrication de corps par tirage hors d'un bain Expired FR1229489A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL229533 1958-07-11

Publications (1)

Publication Number Publication Date
FR1229489A true FR1229489A (fr) 1960-09-07

Family

ID=19751277

Family Applications (1)

Application Number Title Priority Date Filing Date
FR799725A Expired FR1229489A (fr) 1958-07-11 1959-07-09 Procédé de fabrication de corps par tirage hors d'un bain

Country Status (5)

Country Link
US (1) US3015592A (en:Method)
DE (1) DE1108185B (en:Method)
FR (1) FR1229489A (en:Method)
GB (1) GB915120A (en:Method)
NL (2) NL229533A (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0226794A1 (en) * 1985-11-25 1987-07-01 Sumitomo Electric Industries Limited Method of drawing-up a single crystal using a double-crucible apparatus and double-crucible apparatus therefor

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE623518A (en:Method) * 1961-10-13
US3876388A (en) * 1968-10-30 1975-04-08 Siemens Ag Method of varying the crystalline structure of or the concentration of impurities contained in a tubular starting crystal or both using diagonal zone melting
US3915656A (en) * 1971-06-01 1975-10-28 Tyco Laboratories Inc Apparatus for growing crystalline bodies from the melt
DE2138359B2 (de) * 1971-07-31 1973-05-17 Preussag Ag, 3000 Hannover Vorrichtung zum ziehen eines stabes
US3853489A (en) * 1971-11-08 1974-12-10 Tyco Laboratories Inc A non-wetting aid for growing crystalline bodies
US4032390A (en) * 1974-02-25 1977-06-28 Corning Glass Works Plural crystal pulling from a melt in an annular crucible heated on both inner and outer walls
US3961905A (en) * 1974-02-25 1976-06-08 Corning Glass Works Crucible and heater assembly for crystal growth from a melt
US4125425A (en) * 1974-03-01 1978-11-14 U.S. Philips Corporation Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element
US4289572A (en) * 1976-12-27 1981-09-15 Dow Corning Corporation Method of closing silicon tubular bodies
US4190631A (en) * 1978-09-21 1980-02-26 Western Electric Company, Incorporated Double crucible crystal growing apparatus
US4299648A (en) * 1980-08-20 1981-11-10 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for drawing monocrystalline ribbon from a melt
US4469552A (en) * 1982-04-23 1984-09-04 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Process and apparatus for growing a crystal ribbon
US4647437A (en) * 1983-05-19 1987-03-03 Mobil Solar Energy Corporation Apparatus for and method of making crystalline bodies
US4711695A (en) * 1983-05-19 1987-12-08 Mobil Solar Energy Corporation Apparatus for and method of making crystalline bodies
JPH0733305B2 (ja) * 1987-03-20 1995-04-12 三菱マテリアル株式会社 石英製二重ルツボの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2730470A (en) * 1950-06-15 1956-01-10 Bell Telephone Labor Inc Method of making semi-conductor crystals
DE973231C (de) * 1953-01-20 1959-12-24 Telefunken Gmbh Verfahren zur Herstellung von Einkristallen durch Ziehen aus einer Schmelze
AT194444B (de) * 1953-02-26 1958-01-10 Siemens Ag Verfahren und Einrichtung zur Behandlung einer längserstreckten Halbleiterkristallanordnung
DE1032852B (de) * 1953-11-24 1958-06-26 Siemens Und Halske Ag Verfahren und Einrichtung zur Herstellung von Halbleiterkristallen nach dem Kristallziehverfahren aus der Schmelze
DE1044768B (de) * 1954-03-02 1958-11-27 Siemens Ag Verfahren und Vorrichtung zum Ziehen eines stabfoermigen kristallinen Koerpers, vorzugsweise Halbleiterkoerpers
DE962553C (de) * 1954-09-14 1957-04-25 Licentia Gmbh Verfahren zur Herstellung von einkristallinen Halbleiterkoerpern in Form von Hohlzylindern durch Ziehen aus der Schmelze
US2822308A (en) * 1955-03-29 1958-02-04 Gen Electric Semiconductor p-n junction units and method of making the same
US2841559A (en) * 1955-04-27 1958-07-01 Rca Corp Method of doping semi-conductive materials
US2879189A (en) * 1956-11-21 1959-03-24 Shockley William Method for growing junction semi-conductive devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0226794A1 (en) * 1985-11-25 1987-07-01 Sumitomo Electric Industries Limited Method of drawing-up a single crystal using a double-crucible apparatus and double-crucible apparatus therefor
US5021118A (en) * 1985-11-25 1991-06-04 Sumitomo Electric Industries, Ltd. Method of drawing-up a single crystal using a double-crucible apparatus and double-crucible apparatus and double-crucible apparatus therefor

Also Published As

Publication number Publication date
DE1108185B (de) 1961-06-08
GB915120A (en) 1963-01-09
NL112257C (en:Method)
US3015592A (en) 1962-01-02
NL229533A (en:Method)

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