FR1224562A - Procédé pour le traitement de surface de corps constitués par un matériau semi-conducteur de grande pureté - Google Patents
Procédé pour le traitement de surface de corps constitués par un matériau semi-conducteur de grande puretéInfo
- Publication number
- FR1224562A FR1224562A FR794798A FR794798A FR1224562A FR 1224562 A FR1224562 A FR 1224562A FR 794798 A FR794798 A FR 794798A FR 794798 A FR794798 A FR 794798A FR 1224562 A FR1224562 A FR 1224562A
- Authority
- FR
- France
- Prior art keywords
- surface treatment
- semiconductor material
- high purity
- bodies made
- purity semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES58239A DE1187098B (de) | 1958-05-16 | 1958-05-16 | Verfahren zum Herstellen von Koerpern aus hochgereinigtem Halbleitermaterial |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1224562A true FR1224562A (fr) | 1960-06-24 |
Family
ID=7492407
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR794798A Expired FR1224562A (fr) | 1958-05-16 | 1959-05-15 | Procédé pour le traitement de surface de corps constitués par un matériau semi-conducteur de grande pureté |
Country Status (7)
Country | Link |
---|---|
US (1) | US3171755A (fr) |
BE (1) | BE578542A (fr) |
CH (1) | CH416576A (fr) |
DE (1) | DE1187098B (fr) |
FR (1) | FR1224562A (fr) |
GB (1) | GB914042A (fr) |
NL (2) | NL236697A (fr) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3279946A (en) * | 1962-08-14 | 1966-10-18 | Merck & Co Inc | Hydrogen chloride treatment of semiconductor coating chamber |
NL294648A (fr) * | 1962-08-31 | |||
US3232803A (en) * | 1963-04-16 | 1966-02-01 | North American Aviation Inc | Chemical etching of tungsten |
US3367303A (en) * | 1963-05-29 | 1968-02-06 | Monsanto Co | Chemical equipment |
DE1290925B (de) * | 1963-06-10 | 1969-03-20 | Philips Nv | Verfahren zum Abscheiden von Silicium auf einem Halbleiterkoerper |
US3310426A (en) * | 1963-10-02 | 1967-03-21 | Siemens Ag | Method and apparatus for producing semiconductor material |
US3447506A (en) * | 1965-07-19 | 1969-06-03 | Mbt Corp | Vapor-coating apparatus |
US3522118A (en) * | 1965-08-17 | 1970-07-28 | Motorola Inc | Gas phase etching |
US3540871A (en) * | 1967-12-15 | 1970-11-17 | Texas Instruments Inc | Method for maintaining the uniformity of vapor grown polycrystalline silicon |
US4089735A (en) * | 1968-06-05 | 1978-05-16 | Siemens Aktiengesellschaft | Method for epitactic precipitation of crystalline material from a gaseous phase, particularly for semiconductors |
US3649260A (en) * | 1970-02-27 | 1972-03-14 | Sylvania Electric Prod | Process for making refractory metal material |
US3980042A (en) * | 1972-03-21 | 1976-09-14 | Siemens Aktiengesellschaft | Vapor deposition apparatus with computer control |
BE806098A (fr) * | 1973-03-28 | 1974-02-01 | Siemens Ag | Procede de fabrication de silicium ou autre matiere semi-conductrice tres pure |
DE2364989C3 (de) * | 1973-12-28 | 1979-10-18 | Consortium Fuer Elektrochemische Industrie Gmbh, 8000 Muenchen | Verfahren zur Herstellung von Schichten aus Siliciumcarbid auf einem Siliciumsubstrat |
DE2753567C3 (de) * | 1977-12-01 | 1982-04-15 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung von hochreinen Halbleitermaterialien und Reinstmetallen |
JPS592318A (ja) * | 1982-06-28 | 1984-01-07 | Toshiba Mach Co Ltd | 半導体気相成長装置 |
US5259883A (en) * | 1988-02-16 | 1993-11-09 | Kabushiki Kaisha Toshiba | Method of thermally processing semiconductor wafers and an apparatus therefor |
EP2039653B1 (fr) * | 2007-09-20 | 2015-12-23 | Mitsubishi Materials Corporation | Réacteur pour silicium polycristallin et procédé de production de silicium polycristallin |
KR100892123B1 (ko) * | 2008-12-31 | 2009-04-09 | (주)세미머티리얼즈 | 폴리 실리콘 증착장치 |
DE102009015196A1 (de) | 2009-03-31 | 2010-10-14 | Centrotherm Sitec Gmbh | Spann-und Kontaktierungsvorrichtung für Silizium-Dünnstäbe |
DE202010002486U1 (de) | 2009-03-31 | 2010-06-10 | Centrotherm Sitec Gmbh | Spann- und Kontaktierungsvorrichtung für Silizium-Dünnstäbe |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE943422C (de) * | 1949-04-02 | 1956-05-17 | Licentia Gmbh | Gesteuerter Trockengleichrichter, insbesondere mit Germanium, Silizium oder Siliziumkarbid als halbleitender Substanz |
BE509317A (fr) * | 1951-03-07 | 1900-01-01 | ||
DE966879C (de) * | 1953-02-21 | 1957-09-12 | Standard Elektrik Ag | Verfahren zur Reinigung und/oder Abtragung von Halbleitermaterial, insbesondere von Germanium- und Siliziumsubstanz |
NL218408A (fr) * | 1954-05-18 | 1900-01-01 | ||
DE1029941B (de) * | 1955-07-13 | 1958-05-14 | Siemens Ag | Verfahren zur Herstellung von einkristallinen Halbleiterschichten |
US2840489A (en) * | 1956-01-17 | 1958-06-24 | Owens Illinois Glass Co | Process for the controlled deposition of silicon dihalide vapors onto selected surfaces |
DE1061593B (de) * | 1956-06-25 | 1959-07-16 | Siemens Ag | Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke |
US2841477A (en) * | 1957-03-04 | 1958-07-01 | Pacific Semiconductors Inc | Photochemically activated gaseous etching method |
-
0
- NL NL123477D patent/NL123477C/xx active
- NL NL236697D patent/NL236697A/xx unknown
- BE BE578542D patent/BE578542A/xx unknown
-
1958
- 1958-05-16 DE DES58239A patent/DE1187098B/de active Pending
-
1959
- 1959-05-06 CH CH7297759A patent/CH416576A/de unknown
- 1959-05-15 GB GB16748/59A patent/GB914042A/en not_active Expired
- 1959-05-15 FR FR794798A patent/FR1224562A/fr not_active Expired
-
1963
- 1963-05-09 US US281857A patent/US3171755A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US3171755A (en) | 1965-03-02 |
GB914042A (en) | 1962-12-28 |
NL236697A (fr) | |
DE1187098B (de) | 1965-02-11 |
BE578542A (fr) | |
NL123477C (fr) | |
CH416576A (de) | 1966-07-15 |
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