FR1120431A - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur

Info

Publication number
FR1120431A
FR1120431A FR1120431DA FR1120431A FR 1120431 A FR1120431 A FR 1120431A FR 1120431D A FR1120431D A FR 1120431DA FR 1120431 A FR1120431 A FR 1120431A
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Application granted granted Critical
Publication of FR1120431A publication Critical patent/FR1120431A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063Electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
FR1120431D 1954-03-09 1955-03-09 Dispositif semi-conducteur Expired FR1120431A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB691454A GB761795A (en) 1954-03-09 1954-03-09 Improvements in or relating to the manufacture of semi-conductor devices

Publications (1)

Publication Number Publication Date
FR1120431A true FR1120431A (fr) 1956-07-05

Family

ID=9823133

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1120431D Expired FR1120431A (fr) 1954-03-09 1955-03-09 Dispositif semi-conducteur

Country Status (2)

Country Link
FR (1) FR1120431A (fr)
GB (1) GB761795A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1125551B (de) * 1956-05-04 1962-03-15 Philco Corp Verfahren zur Herstellung eines legierten pn-UEbergangs sehr geringer Eindringtiefe in einem Halbleiterkoerper
DE1158636B (de) * 1960-08-24 1963-12-05 Telefunken Patent Verfahren zum Herstellen von legierten Halbleiterdioden, insbesondere von Tunneldioden, und Vorrichtung zur Durchfuehrung des Verfahrens

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3192141A (en) * 1959-12-24 1965-06-29 Western Electric Co Simultaneous etching and monitoring of semiconductor bodies
DE1261965C2 (de) * 1960-05-18 1973-11-22 Sony Corp Verfahren zum herstellen von tunneldioden
US3196094A (en) * 1960-06-13 1965-07-20 Ibm Method of automatically etching an esaki diode
GB934557A (en) * 1961-06-16 1963-08-21 Gen Electric Improvements in electrolytic conduction method and apparatus for controlled material removal
JPS6047725B2 (ja) * 1977-06-14 1985-10-23 ソニー株式会社 フエライトの加工法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1125551B (de) * 1956-05-04 1962-03-15 Philco Corp Verfahren zur Herstellung eines legierten pn-UEbergangs sehr geringer Eindringtiefe in einem Halbleiterkoerper
DE1158636B (de) * 1960-08-24 1963-12-05 Telefunken Patent Verfahren zum Herstellen von legierten Halbleiterdioden, insbesondere von Tunneldioden, und Vorrichtung zur Durchfuehrung des Verfahrens

Also Published As

Publication number Publication date
GB761795A (en) 1956-11-21

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