FR1064045A - Procédé pour l'obtention de couches semi-conductrices - Google Patents

Procédé pour l'obtention de couches semi-conductrices

Info

Publication number
FR1064045A
FR1064045A FR1064045DA FR1064045A FR 1064045 A FR1064045 A FR 1064045A FR 1064045D A FR1064045D A FR 1064045DA FR 1064045 A FR1064045 A FR 1064045A
Authority
FR
France
Prior art keywords
germanium
layers
semi
crucible
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Inventor
Jean-Jules-Achille Robillard
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1064045A publication Critical patent/FR1064045A/fr
Expired legal-status Critical Current

Links

Classifications

    • H10P14/2923—
    • H10P14/22—
    • H10P14/3411—
    • H10P14/38—

Landscapes

  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
FR1064045D 1952-01-22 1952-10-02 Procédé pour l'obtention de couches semi-conductrices Expired FR1064045A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE307775X 1952-01-22

Publications (1)

Publication Number Publication Date
FR1064045A true FR1064045A (fr) 1954-05-10

Family

ID=20307566

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1064045D Expired FR1064045A (fr) 1952-01-22 1952-10-02 Procédé pour l'obtention de couches semi-conductrices

Country Status (4)

Country Link
BE (1) BE514927A (enExample)
CH (1) CH307775A (enExample)
FR (1) FR1064045A (enExample)
GB (1) GB732797A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1098316B (de) * 1957-06-26 1961-01-26 Union Carbide Corp Verfahren zum Herstellen einkristalliner UEberzuege aus dotierten Halbleitergrundstoffen durch Aufdampfen im Vakuum
DE1227433B (de) * 1955-07-28 1966-10-27 Siemens Ag Verfahren zum Einbau definierter Stoerstellen in Metall- oder Halbleiterschichten
DE1237076B (de) * 1962-06-19 1967-03-23 Western Electric Co Verfahren zum Herstellen eines epitaxial aufgewachsenen Siliciumfilms auf einer Halbleiterunterlage
DE1262979B (de) * 1961-03-14 1968-03-14 Siemens Ag Verfahren und Vorrichtung zum Herstellen einkristalliner Schichten durch Aufdampfen
DE1298833B (de) * 1962-04-13 1969-07-03 Air Reduction Vorrichtung zum Vakuumaufdampfen einer Vielzahl von festhaftenden Schichten bestimmter Dicke aus verschiedenen Materialien auf eine Unterlage mittels Elektronenbeschuss

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE548791A (enExample) * 1955-06-20
US2963390A (en) * 1955-09-26 1960-12-06 Hoffman Electronics Corp Method of making a photosensitive semi-conductor device
DE1058634B (de) * 1956-06-07 1959-06-04 Ibm Deutschland Gasdiffusionsverfahren zur Herstellung eines Transistors
US2964435A (en) * 1957-03-27 1960-12-13 Mc Graw Edison Co Semiconductor devices and their manufacture
DE1071177B (enExample) * 1958-01-17
US3034924A (en) * 1958-10-30 1962-05-15 Balzers Patent Beteilig Ag Use of a rare earth metal in vaporizing metals and metal oxides
US3036933A (en) * 1959-10-06 1962-05-29 Ibm Vacuum evaporation method
US3063871A (en) * 1959-10-23 1962-11-13 Merck & Co Inc Production of semiconductor films
US3206322A (en) * 1960-10-31 1965-09-14 Morgan John Robert Vacuum deposition means and methods for manufacture of electronic components
US3172778A (en) * 1961-01-03 1965-03-09 Method for producing thin semi- conducting layers of semicon- ductor compounds

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1227433B (de) * 1955-07-28 1966-10-27 Siemens Ag Verfahren zum Einbau definierter Stoerstellen in Metall- oder Halbleiterschichten
DE1098316B (de) * 1957-06-26 1961-01-26 Union Carbide Corp Verfahren zum Herstellen einkristalliner UEberzuege aus dotierten Halbleitergrundstoffen durch Aufdampfen im Vakuum
DE1262979B (de) * 1961-03-14 1968-03-14 Siemens Ag Verfahren und Vorrichtung zum Herstellen einkristalliner Schichten durch Aufdampfen
DE1298833B (de) * 1962-04-13 1969-07-03 Air Reduction Vorrichtung zum Vakuumaufdampfen einer Vielzahl von festhaftenden Schichten bestimmter Dicke aus verschiedenen Materialien auf eine Unterlage mittels Elektronenbeschuss
DE1237076B (de) * 1962-06-19 1967-03-23 Western Electric Co Verfahren zum Herstellen eines epitaxial aufgewachsenen Siliciumfilms auf einer Halbleiterunterlage

Also Published As

Publication number Publication date
GB732797A (en) 1955-06-29
CH307775A (de) 1955-06-15
BE514927A (enExample)

Similar Documents

Publication Publication Date Title
FR1064045A (fr) Procédé pour l'obtention de couches semi-conductrices
US2853402A (en) Magnetic element and method for producing the same
US2724663A (en) Plural metal vapor coating
US2732313A (en) Titanium
Hill Electrical conduction in ultra thin metal films II. Experimental
US3540926A (en) Nitride insulating films deposited by reactive evaporation
US3361591A (en) Production of thin films of cadmium sulfide, cadmium telluride or cadmium selenide
US3874917A (en) Method of forming vitreous semiconductors by vapor depositing bismuth and selenium
US3514320A (en) Method of forming single crystal films by nonepitaxial growth
US2822300A (en) Photoconductive material
FR2389682A1 (enExample)
GB802041A (en) Improvements in or relating to process of and apparatus for depositing photo-sensitive materials on strip-like carriers
GB485528A (en) Improvements in and relating to light sensitive devices and methods of manufacturing the same
Wang et al. Vapor deposition and characterization of metal oxide thin films for electronic applications
US3213825A (en) Vacuum deposition apparatus
US3294660A (en) Amorphous zinc oxide semiconductor and method of making
GB808580A (en) Improvements in or relating to an element having a semi-conductor and a method of producing the same
GB1136881A (en) Vapour growth of silicon crystals and apparatus for producing the same
US3101280A (en) Method of preparing indium antimonide films
Condas Properties and preparation of thin antimony films of high uniformity
US2868736A (en) Preparation of photosensitive crystals
GB1338337A (en) Cadmium sulphide thin film sustained conductivity device and method for making same
US3519480A (en) Process for treating photoconductive cadmium sulfide layers
US3832298A (en) Method for producing a photoconductive element
JPS62177168A (ja) 炭素薄膜の製造方法