FI98036B - Krets för styrning av en kapacitiv last - Google Patents
Krets för styrning av en kapacitiv lastInfo
- Publication number
- FI98036B FI98036B FI894456A FI894456A FI98036B FI 98036 B FI98036 B FI 98036B FI 894456 A FI894456 A FI 894456A FI 894456 A FI894456 A FI 894456A FI 98036 B FI98036 B FI 98036B
- Authority
- FI
- Finland
- Prior art keywords
- controlling
- circuit
- capacitive load
- capacitive
- load
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/735—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63233433A JP2664219B2 (ja) | 1988-09-20 | 1988-09-20 | 駆動回路 |
JP23343388 | 1988-09-20 |
Publications (4)
Publication Number | Publication Date |
---|---|
FI894456A0 FI894456A0 (sv) | 1989-09-20 |
FI894456A FI894456A (sv) | 1990-03-21 |
FI98036B true FI98036B (sv) | 1996-12-13 |
FI98036C FI98036C (sv) | 1997-03-25 |
Family
ID=16954963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI894456A FI98036C (sv) | 1988-09-20 | 1989-09-20 | Krets för styrning av en kapacitiv last |
Country Status (5)
Country | Link |
---|---|
US (1) | US5148049A (sv) |
EP (1) | EP0360117B1 (sv) |
JP (1) | JP2664219B2 (sv) |
DE (1) | DE68923748T2 (sv) |
FI (1) | FI98036C (sv) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2953226B2 (ja) * | 1992-12-11 | 1999-09-27 | 株式会社デンソー | 基準電圧発生回路 |
US5852358A (en) * | 1996-12-11 | 1998-12-22 | The Texas A&M University System | Capactive power circuit |
WO1998026504A1 (en) * | 1996-12-11 | 1998-06-18 | The Texas A & M University System | Capacitive power circuit |
JP3006534B2 (ja) * | 1997-03-31 | 2000-02-07 | 日本電気株式会社 | 半導体装置 |
JP4359959B2 (ja) * | 1999-04-13 | 2009-11-11 | 株式会社デンソー | 容量性負荷の駆動装置 |
US6376934B1 (en) | 1999-08-18 | 2002-04-23 | Sipex Corporation | Voltage waveform generator |
FR2803140B1 (fr) | 1999-12-24 | 2002-05-31 | St Microelectronics Sa | Generateur analogique d'impulsions de tension |
FR2889345A1 (fr) * | 2005-04-04 | 2007-02-02 | Thomson Licensing Sa | Dispositif d'entretien pour panneau plasma |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1218316B (it) * | 1982-03-17 | 1990-04-12 | Ates Componenti Elettron | Circuito di comando in commutazione di carichi induttivi,integrabile monolicamente,comprendente uno stadio finalein push-pull |
DE3230741A1 (de) * | 1982-08-18 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterschalter mit einem abschaltbaren thyristor |
EP0140349B1 (en) * | 1983-10-28 | 1992-01-02 | Hitachi, Ltd. | Semiconductor switching device |
US4581542A (en) * | 1983-11-14 | 1986-04-08 | General Electric Company | Driver circuits for emitter switch gate turn-off SCR devices |
JPS60125015A (ja) * | 1983-12-12 | 1985-07-04 | Hitachi Ltd | インバ−タ回路 |
JPS60208119A (ja) * | 1984-03-30 | 1985-10-19 | Hitachi Ltd | 容量性負荷の駆動回路 |
US4598213A (en) * | 1984-09-24 | 1986-07-01 | Motorola, Inc. | Bipolar transient driver |
JP2571766B2 (ja) * | 1986-04-30 | 1997-01-16 | 富士通株式会社 | マトリクス表示パネル |
JPH0795225B2 (ja) * | 1986-09-11 | 1995-10-11 | 富士通株式会社 | マトリツクス表示パネルの駆動回路 |
US4926065A (en) * | 1987-11-17 | 1990-05-15 | Applied Micro Circuits Corporation | Method and apparatus for coupling an ECL output signal using a clamped capacitive bootstrap circuit |
US4810903A (en) * | 1987-12-14 | 1989-03-07 | Motorola, Inc. | BICMOS driver circuit including submicron on chip voltage source |
JPH06100889B2 (ja) * | 1987-12-21 | 1994-12-12 | 株式会社日立製作所 | 駆動回路 |
US4877980A (en) * | 1988-03-10 | 1989-10-31 | Advanced Micro Devices, Inc. | Time variant drive circuit for high speed bus driver to limit oscillations or ringing on a bus |
US4874970A (en) * | 1988-05-11 | 1989-10-17 | Applied Micro Circuits Corporation | ECL output with Darlington or common collector-common emitter drive |
FR2635930B1 (fr) * | 1988-08-31 | 1990-11-23 | Sgs Thomson Microelectronics | Commutateur bidirectionnel monolithique a transistors mos de puissance |
-
1988
- 1988-09-20 JP JP63233433A patent/JP2664219B2/ja not_active Expired - Lifetime
-
1989
- 1989-09-11 DE DE68923748T patent/DE68923748T2/de not_active Expired - Lifetime
- 1989-09-11 US US07/405,230 patent/US5148049A/en not_active Expired - Lifetime
- 1989-09-11 EP EP89116766A patent/EP0360117B1/en not_active Expired - Lifetime
- 1989-09-20 FI FI894456A patent/FI98036C/sv active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JPH0282293A (ja) | 1990-03-22 |
DE68923748D1 (de) | 1995-09-14 |
EP0360117B1 (en) | 1995-08-09 |
FI98036C (sv) | 1997-03-25 |
EP0360117A3 (en) | 1991-05-08 |
US5148049A (en) | 1992-09-15 |
FI894456A0 (sv) | 1989-09-20 |
EP0360117A2 (en) | 1990-03-28 |
JP2664219B2 (ja) | 1997-10-15 |
FI894456A (sv) | 1990-03-21 |
DE68923748T2 (de) | 1996-01-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BB | Publication of examined application | ||
FG | Patent granted |
Owner name: HITACHI ENGINEERING CO., LTD Owner name: HITACHI LTD |