FI71039B - Diod foer monolitintegrerad krets - Google Patents

Diod foer monolitintegrerad krets Download PDF

Info

Publication number
FI71039B
FI71039B FI831227A FI831227A FI71039B FI 71039 B FI71039 B FI 71039B FI 831227 A FI831227 A FI 831227A FI 831227 A FI831227 A FI 831227A FI 71039 B FI71039 B FI 71039B
Authority
FI
Finland
Prior art keywords
diode
diffusion
substrate
layer
doped
Prior art date
Application number
FI831227A
Other languages
English (en)
Swedish (sv)
Other versions
FI831227L (fi
FI831227A0 (fi
FI71039C (fi
Inventor
Klas-Haokan Eklund
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of FI831227L publication Critical patent/FI831227L/fi
Publication of FI831227A0 publication Critical patent/FI831227A0/fi
Publication of FI71039B publication Critical patent/FI71039B/fi
Application granted granted Critical
Publication of FI71039C publication Critical patent/FI71039C/fi

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FI831227A 1981-08-25 1983-04-12 Diod foer monolitintegrerad krets FI71039C (fi)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
SE8105040 1981-08-25
SE8105040A SE427598B (sv) 1981-08-25 1981-08-25 Halvledardiod avsedd att inga i integrerade kretsar
PCT/SE1982/000266 WO1983000776A1 (en) 1981-08-25 1982-08-19 Diode for monolithic integrated circuit
SE8200266 1982-08-19

Publications (4)

Publication Number Publication Date
FI831227L FI831227L (fi) 1983-04-12
FI831227A0 FI831227A0 (fi) 1983-04-12
FI71039B true FI71039B (fi) 1986-07-18
FI71039C FI71039C (fi) 1986-10-27

Family

ID=20344426

Family Applications (1)

Application Number Title Priority Date Filing Date
FI831227A FI71039C (fi) 1981-08-25 1983-04-12 Diod foer monolitintegrerad krets

Country Status (7)

Country Link
EP (1) EP0086210B1 (fi)
DE (1) DE3264667D1 (fi)
DK (1) DK157468C (fi)
FI (1) FI71039C (fi)
IT (1) IT1207305B (fi)
SE (1) SE427598B (fi)
WO (1) WO1983000776A1 (fi)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1197279B (it) * 1986-09-25 1988-11-30 Sgs Microelettronica Spa Dispositivo integrato per schermare l'iniezione di cariche nel substrato, in particolare in circuiti di pilotaggio di carichi induttivi e/o capacitivi
DE3832731A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterdiode
DE3832732A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterdiode
EP0685891B1 (en) * 1994-05-31 2001-08-08 STMicroelectronics S.r.l. Integrated semiconductor diode
JP4597284B2 (ja) * 1999-04-12 2010-12-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
GB2354879B (en) * 1999-08-11 2004-05-12 Mitel Semiconductor Ltd A semiconductor device
WO2001020682A1 (en) * 1999-09-16 2001-03-22 Koninklijke Philips Electronics N.V. Semiconductor device
JP4065104B2 (ja) * 2000-12-25 2008-03-19 三洋電機株式会社 半導体集積回路装置およびその製造方法
US7528459B2 (en) * 2003-05-27 2009-05-05 Nxp B.V. Punch-through diode and method of processing the same
CN102623511B (zh) * 2011-01-26 2015-12-02 上海华虹宏力半导体制造有限公司 功率二极管
US9391159B2 (en) * 2012-04-03 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Triple well isolated diode and method of making

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3930909A (en) * 1966-10-21 1976-01-06 U.S. Philips Corporation Method of manufacturing a semiconductor device utilizing simultaneous outdiffusion during epitaxial growth
US4027325A (en) * 1975-01-30 1977-05-31 Sprague Electric Company Integrated full wave diode bridge rectifier
US4117507A (en) * 1976-06-22 1978-09-26 Sgs-Ates Componeti Elettronici S.P.A. Diode formed in integrated-circuit structure
US4272307A (en) * 1979-03-12 1981-06-09 Sprague Electric Company Integrated circuit with I2 L and power transistors and method for making
JPS55132068A (en) * 1979-03-30 1980-10-14 Ibm Pnp bipolar transistor
JPS55134983A (en) * 1979-04-09 1980-10-21 Ibm Surface breakdown zener diode

Also Published As

Publication number Publication date
IT8222971A0 (it) 1982-08-25
SE8105040L (sv) 1983-02-26
DE3264667D1 (en) 1985-08-14
DK157468B (da) 1990-01-08
EP0086210B1 (en) 1985-07-10
FI831227L (fi) 1983-04-12
IT1207305B (it) 1989-05-17
WO1983000776A1 (en) 1983-03-03
EP0086210A1 (en) 1983-08-24
FI831227A0 (fi) 1983-04-12
FI71039C (fi) 1986-10-27
SE427598B (sv) 1983-04-18
DK157468C (da) 1990-05-21
DK179383A (da) 1983-04-22
DK179383D0 (da) 1983-04-22

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MA Patent expired

Owner name: OY L M ERICSSON AB