IT8222971A0 - Diodo per circuito integrato monolitico. - Google Patents

Diodo per circuito integrato monolitico.

Info

Publication number
IT8222971A0
IT8222971A0 IT8222971A IT2297182A IT8222971A0 IT 8222971 A0 IT8222971 A0 IT 8222971A0 IT 8222971 A IT8222971 A IT 8222971A IT 2297182 A IT2297182 A IT 2297182A IT 8222971 A0 IT8222971 A0 IT 8222971A0
Authority
IT
Italy
Prior art keywords
diode
integrated circuit
monolithic integrated
monolithic
circuit
Prior art date
Application number
IT8222971A
Other languages
English (en)
Other versions
IT1207305B (it
Inventor
Klas Hakan Eklund
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of IT8222971A0 publication Critical patent/IT8222971A0/it
Application granted granted Critical
Publication of IT1207305B publication Critical patent/IT1207305B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
IT8222971A 1981-08-25 1982-08-25 Diodo per circuito integrato monolitico. IT1207305B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE8105040A SE427598B (sv) 1981-08-25 1981-08-25 Halvledardiod avsedd att inga i integrerade kretsar

Publications (2)

Publication Number Publication Date
IT8222971A0 true IT8222971A0 (it) 1982-08-25
IT1207305B IT1207305B (it) 1989-05-17

Family

ID=20344426

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8222971A IT1207305B (it) 1981-08-25 1982-08-25 Diodo per circuito integrato monolitico.

Country Status (7)

Country Link
EP (1) EP0086210B1 (it)
DE (1) DE3264667D1 (it)
DK (1) DK157468C (it)
FI (1) FI71039C (it)
IT (1) IT1207305B (it)
SE (1) SE427598B (it)
WO (1) WO1983000776A1 (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1197279B (it) * 1986-09-25 1988-11-30 Sgs Microelettronica Spa Dispositivo integrato per schermare l'iniezione di cariche nel substrato, in particolare in circuiti di pilotaggio di carichi induttivi e/o capacitivi
DE3832732A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterdiode
DE3832731A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterdiode
EP0685891B1 (en) * 1994-05-31 2001-08-08 STMicroelectronics S.r.l. Integrated semiconductor diode
JP4597284B2 (ja) * 1999-04-12 2010-12-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
GB2354879B (en) * 1999-08-11 2004-05-12 Mitel Semiconductor Ltd A semiconductor device
JP2003509867A (ja) * 1999-09-16 2003-03-11 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体装置
JP4065104B2 (ja) * 2000-12-25 2008-03-19 三洋電機株式会社 半導体集積回路装置およびその製造方法
US7528459B2 (en) * 2003-05-27 2009-05-05 Nxp B.V. Punch-through diode and method of processing the same
CN102623511B (zh) * 2011-01-26 2015-12-02 上海华虹宏力半导体制造有限公司 功率二极管
US9391159B2 (en) * 2012-04-03 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Triple well isolated diode and method of making

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3930909A (en) * 1966-10-21 1976-01-06 U.S. Philips Corporation Method of manufacturing a semiconductor device utilizing simultaneous outdiffusion during epitaxial growth
US4027325A (en) * 1975-01-30 1977-05-31 Sprague Electric Company Integrated full wave diode bridge rectifier
US4117507A (en) * 1976-06-22 1978-09-26 Sgs-Ates Componeti Elettronici S.P.A. Diode formed in integrated-circuit structure
US4272307A (en) * 1979-03-12 1981-06-09 Sprague Electric Company Integrated circuit with I2 L and power transistors and method for making
JPS55132068A (en) * 1979-03-30 1980-10-14 Ibm Pnp bipolar transistor
JPS55134983A (en) * 1979-04-09 1980-10-21 Ibm Surface breakdown zener diode

Also Published As

Publication number Publication date
DK179383A (da) 1983-04-22
FI831227A0 (fi) 1983-04-12
DK157468C (da) 1990-05-21
EP0086210A1 (en) 1983-08-24
WO1983000776A1 (en) 1983-03-03
SE8105040L (sv) 1983-02-26
IT1207305B (it) 1989-05-17
FI71039B (fi) 1986-07-18
EP0086210B1 (en) 1985-07-10
FI831227L (fi) 1983-04-12
FI71039C (fi) 1986-10-27
DE3264667D1 (en) 1985-08-14
DK179383D0 (da) 1983-04-22
SE427598B (sv) 1983-04-18
DK157468B (da) 1990-01-08

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970827