FI831227L - Diod foer monolitintegrerad krets - Google Patents

Diod foer monolitintegrerad krets

Info

Publication number
FI831227L
FI831227L FI831227A FI831227A FI831227L FI 831227 L FI831227 L FI 831227L FI 831227 A FI831227 A FI 831227A FI 831227 A FI831227 A FI 831227A FI 831227 L FI831227 L FI 831227L
Authority
FI
Finland
Prior art keywords
monolitintegrerad
krets
diod
foer
monolitintegrerad krets
Prior art date
Application number
FI831227A
Other languages
English (en)
Other versions
FI71039B (fi
FI71039C (fi
FI831227A0 (fi
Inventor
Klas-Haokan Eklund
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of FI831227L publication Critical patent/FI831227L/fi
Publication of FI831227A0 publication Critical patent/FI831227A0/fi
Publication of FI71039B publication Critical patent/FI71039B/fi
Application granted granted Critical
Publication of FI71039C publication Critical patent/FI71039C/fi

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743Making of internal connections, substrate contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814Diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
FI831227A 1981-08-25 1983-04-12 Diod foer monolitintegrerad krets FI71039C (fi)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
SE8105040 1981-08-25
SE8105040A SE427598B (sv) 1981-08-25 1981-08-25 Halvledardiod avsedd att inga i integrerade kretsar
PCT/SE1982/000266 WO1983000776A1 (en) 1981-08-25 1982-08-19 Diode for monolithic integrated circuit
SE8200266 1982-08-19

Publications (4)

Publication Number Publication Date
FI831227L true FI831227L (fi) 1983-04-12
FI831227A0 FI831227A0 (fi) 1983-04-12
FI71039B FI71039B (fi) 1986-07-18
FI71039C FI71039C (fi) 1986-10-27

Family

ID=20344426

Family Applications (1)

Application Number Title Priority Date Filing Date
FI831227A FI71039C (fi) 1981-08-25 1983-04-12 Diod foer monolitintegrerad krets

Country Status (7)

Country Link
EP (1) EP0086210B1 (fi)
DE (1) DE3264667D1 (fi)
DK (1) DK157468C (fi)
FI (1) FI71039C (fi)
IT (1) IT1207305B (fi)
SE (1) SE427598B (fi)
WO (1) WO1983000776A1 (fi)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1197279B (it) * 1986-09-25 1988-11-30 Sgs Microelettronica Spa Dispositivo integrato per schermare l'iniezione di cariche nel substrato, in particolare in circuiti di pilotaggio di carichi induttivi e/o capacitivi
DE3832731A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterdiode
DE3832732A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterdiode
DE69427904T2 (de) * 1994-05-31 2002-04-04 Stmicroelectronics S.R.L., Agrate Brianza Integrierte Halbleiterdiode
JP4597284B2 (ja) * 1999-04-12 2010-12-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
GB2354879B (en) * 1999-08-11 2004-05-12 Mitel Semiconductor Ltd A semiconductor device
JP2003509867A (ja) * 1999-09-16 2003-03-11 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体装置
JP4065104B2 (ja) * 2000-12-25 2008-03-19 三洋電機株式会社 半導体集積回路装置およびその製造方法
US7528459B2 (en) * 2003-05-27 2009-05-05 Nxp B.V. Punch-through diode and method of processing the same
CN102623511B (zh) * 2011-01-26 2015-12-02 上海华虹宏力半导体制造有限公司 功率二极管
US9391159B2 (en) * 2012-04-03 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Triple well isolated diode and method of making

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3930909A (en) * 1966-10-21 1976-01-06 U.S. Philips Corporation Method of manufacturing a semiconductor device utilizing simultaneous outdiffusion during epitaxial growth
US4027325A (en) * 1975-01-30 1977-05-31 Sprague Electric Company Integrated full wave diode bridge rectifier
US4117507A (en) * 1976-06-22 1978-09-26 Sgs-Ates Componeti Elettronici S.P.A. Diode formed in integrated-circuit structure
US4272307A (en) * 1979-03-12 1981-06-09 Sprague Electric Company Integrated circuit with I2 L and power transistors and method for making
JPS55132068A (en) * 1979-03-30 1980-10-14 Ibm Pnp bipolar transistor
JPS55134983A (en) * 1979-04-09 1980-10-21 Ibm Surface breakdown zener diode

Also Published As

Publication number Publication date
EP0086210A1 (en) 1983-08-24
IT1207305B (it) 1989-05-17
DE3264667D1 (en) 1985-08-14
FI71039B (fi) 1986-07-18
FI71039C (fi) 1986-10-27
WO1983000776A1 (en) 1983-03-03
IT8222971A0 (it) 1982-08-25
DK157468C (da) 1990-05-21
FI831227A0 (fi) 1983-04-12
SE427598B (sv) 1983-04-18
DK157468B (da) 1990-01-08
SE8105040L (sv) 1983-02-26
DK179383A (da) 1983-04-22
EP0086210B1 (en) 1985-07-10
DK179383D0 (da) 1983-04-22

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Legal Events

Date Code Title Description
MA Patent expired

Owner name: OY L M ERICSSON AB