FI20095660A - Järjestelmät ja menetelmät integroituja passiivikompenetteja sisältäviä tehovahvistimia varten - Google Patents

Järjestelmät ja menetelmät integroituja passiivikompenetteja sisältäviä tehovahvistimia varten Download PDF

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FI20095660A
FI20095660A FI20095660A FI20095660A FI20095660A FI 20095660 A FI20095660 A FI 20095660A FI 20095660 A FI20095660 A FI 20095660A FI 20095660 A FI20095660 A FI 20095660A FI 20095660 A FI20095660 A FI 20095660A
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Finland
Prior art keywords
systems
methods
power amplifiers
passive components
integrated passive
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FI20095660A
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English (en)
Swedish (sv)
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FI20095660A0 (fi
Inventor
Ki Seok Yang
Jaejoon Chang
Kyu Hwan An
Wangmyong Woo
Chang Ho Lee
Kim Younsuk
Hyogun Bae
Kijoong Kim
Iizuka Shinichi
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Samsung Electro Mech
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Publication of FI20095660A0 publication Critical patent/FI20095660A0/fi
Publication of FI20095660A publication Critical patent/FI20095660A/fi

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
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    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
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    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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    • H03F2200/541—Transformer coupled at the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21142—Output signals of a plurality of power amplifiers are parallel combined to a common output

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Amplifiers (AREA)
FI20095660A 2008-06-12 2009-06-12 Järjestelmät ja menetelmät integroituja passiivikompenetteja sisältäviä tehovahvistimia varten FI20095660A (fi)

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US12/138,188 US7746174B2 (en) 2008-06-12 2008-06-12 Systems and methods for power amplifier with integrated passive device

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FI20095660A true FI20095660A (fi) 2009-12-13

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Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101004943B1 (ko) * 2008-10-14 2010-12-28 삼성전기주식회사 무선통신용 송신 모듈
US7952433B2 (en) * 2008-11-25 2011-05-31 Samsung Electro-Mechanics Company Power amplifiers with discrete power control
IT1392575B1 (it) * 2008-12-30 2012-03-09 St Microelectronics Rousset Amplificatore con combinatore di potenza differenziale, a trasformatore attivo distribuito
US8666340B2 (en) * 2009-03-03 2014-03-04 Broadcom Corporation Method and system for on-chip impedance control to impedance match a configurable front end
KR101101426B1 (ko) * 2010-02-03 2012-01-02 삼성전기주식회사 전력 증폭기
KR101119279B1 (ko) * 2010-03-04 2012-03-20 삼성전기주식회사 전력증폭기
CN102055414A (zh) * 2010-04-14 2011-05-11 锐迪科创微电子（北京）有限公司 射频功率放大器模块及移动通信终端
US8493126B2 (en) * 2010-07-15 2013-07-23 Qualcomm Incorporated Wideband balun having a single primary and multiple secondaries
KR101141471B1 (ko) 2010-09-16 2012-05-04 삼성전기주식회사 트랜스포머
JP5746352B2 (ja) 2010-09-23 2015-07-08 クゥアルコム・メムス・テクノロジーズ・インコーポレイテッドＱＵＡＬＣＯＭＭ ＭＥＭＳ Ｔｅｃｈｎｏｌｏｇｉｅｓ， Ｉｎｃ． 集積化された受動素子と電力増幅器
KR101197904B1 (ko) * 2011-04-04 2012-11-05 삼성전기주식회사 전력 결합기, 이를 갖는 전력 증폭 모듈 및 신호 송수신 모듈
US8878627B2 (en) * 2011-04-29 2014-11-04 Cyntec Co., Ltd. Monolithic power splitter for differential signal
KR101872522B1 (ko) * 2011-09-26 2018-06-29 삼성전기주식회사 전력 결합기를 이용한 씨모스 전력 증폭기
DE102012200634B4 (de) * 2012-01-17 2016-11-17 TRUMPF Hüttinger GmbH + Co. KG Leistungskoppler und Schaltschrank mit Leistungskoppler
US10115671B2 (en) 2012-08-03 2018-10-30 Snaptrack, Inc. Incorporation of passives and fine pitch through via for package on package
KR101348267B1 (ko) * 2012-10-09 2014-01-09 주식회사 아이엠텍 초소형 cmos 전력 증폭기
CN102938486B (zh) * 2012-11-19 2015-04-22 南京国博电子有限公司 一种集成耦合电桥的ltcc管壳
US9077310B2 (en) * 2013-05-30 2015-07-07 Mediatek Inc. Radio frequency transmitter, power combiners and terminations therefor
KR20160113363A (ko) 2015-03-18 2016-09-29 알에프에이치아이씨 주식회사 다단 전력증폭모듈
US10062683B1 (en) 2017-02-27 2018-08-28 Qualcomm Incorporated Compound semiconductor transistor and high-Q passive device single chip integration
WO2019033377A1 (en) * 2017-08-18 2019-02-21 Telefonaktiebolaget Lm Ericsson (Publ) RADIO FREQUENCY POWER AMPLIFIER
US10673386B2 (en) 2017-12-05 2020-06-02 Nxp Usa, Inc. Wideband power amplifiers with harmonic traps
JP2020028108A (ja) * 2018-08-10 2020-02-20 株式会社村田製作所 電力増幅モジュール
US11196394B2 (en) 2018-08-10 2021-12-07 Murata Manufacturing Co., Ltd. Power amplifier module
US11101227B2 (en) * 2019-07-17 2021-08-24 Analog Devices International Unlimited Company Coupled line structures for wideband applications
KR102119357B1 (ko) * 2020-01-29 2020-06-05 부산대학교 산학협력단 완전 집적 가능한 병렬전력결합변압기 기반 아웃페이징 전력증폭기
KR102119359B1 (ko) * 2020-01-29 2020-06-05 부산대학교 산학협력단 효율 개선 구조를 포함하는 전력결합변압기 기반 아웃페이징 전력증폭기
KR102119358B1 (ko) * 2020-01-29 2020-06-05 부산대학교 산학협력단 위상 변환부를 포함하는 변압기 기반 아웃페이징 전력증폭기

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5796165A (en) * 1996-03-19 1998-08-18 Matsushita Electronics Corporation High-frequency integrated circuit device having a multilayer structure
DE10035584A1 (de) * 2000-07-21 2002-01-31 Philips Corp Intellectual Pty Mobilfunkgerät
EP1400012B1 (en) * 2000-10-10 2011-08-31 California Institute Of Technology Distributed circular geometry power amplifier architecture
US6462950B1 (en) * 2000-11-29 2002-10-08 Nokia Mobile Phones Ltd. Stacked power amplifier module
US6466094B2 (en) * 2001-01-10 2002-10-15 Ericsson Inc. Gain and bandwidth enhancement for RF power amplifier package
KR100382765B1 (ko) 2001-06-15 2003-05-09 삼성전자주식회사 송수신용 수동소자와 그 집적모듈 및 그 제조방법
JP3890947B2 (ja) * 2001-10-17 2007-03-07 松下電器産業株式会社 高周波半導体装置
US6614308B2 (en) * 2001-10-22 2003-09-02 Infineon Technologies Ag Multi-stage, high frequency, high power signal amplifier
KR20030062692A (ko) * 2002-01-18 2003-07-28 엘지이노텍 주식회사 전력 증폭 모듈
US6801114B2 (en) * 2002-01-23 2004-10-05 Broadcom Corp. Integrated radio having on-chip transformer balun
KR20040020209A (ko) * 2002-08-30 2004-03-09 엘지이노텍 주식회사 듀얼 밴드/모드로 동작하는 고주파 전력 증폭기 모듈 구조
US6798295B2 (en) * 2002-12-13 2004-09-28 Cree Microwave, Inc. Single package multi-chip RF power amplifier
JP2004214258A (ja) * 2002-12-27 2004-07-29 Renesas Technology Corp 半導体モジュール
JP4012840B2 (ja) * 2003-03-14 2007-11-21 三菱電機株式会社 半導体装置
TWI220337B (en) * 2003-08-05 2004-08-11 Delta Electronics Inc Front-end module for wireless network system
US6882228B2 (en) * 2003-09-08 2005-04-19 Broadcom Corp. Radio frequency integrated circuit having an antenna diversity structure
JP2005175262A (ja) * 2003-12-12 2005-06-30 Renesas Technology Corp 半導体装置およびその製造方法
US7157965B1 (en) * 2004-06-21 2007-01-02 Qualcomm Incorporated Summing power amplifier
US7091791B1 (en) * 2004-07-23 2006-08-15 Atheros Communications, Inc. Transformer implementation using bonding wires
US7129784B2 (en) * 2004-10-28 2006-10-31 Broadcom Corporation Multilevel power amplifier architecture using multi-tap transformer
US7288995B2 (en) * 2005-06-15 2007-10-30 Nokia Corporation Power amplifier of a transmitter
US7276420B2 (en) * 2005-07-11 2007-10-02 Freescale Semiconductor, Inc. Method of manufacturing a passive integrated matching network for power amplifiers
US7348656B2 (en) * 2005-09-22 2008-03-25 International Rectifier Corp. Power semiconductor device with integrated passive component
US7675365B2 (en) * 2007-01-10 2010-03-09 Samsung Electro-Mechanics Systems and methods for power amplifiers with voltage boosting multi-primary transformers

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KR101101551B1 (ko) 2012-01-02
US20090309662A1 (en) 2009-12-17
US7746174B2 (en) 2010-06-29
CN101604961B (zh) 2013-03-20
FI20095660A0 (fi) 2009-06-12
CN101604961A (zh) 2009-12-16
KR20090129379A (ko) 2009-12-16

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