FI20021620A0 - Muistirakenne, järjestelmä ja elektroniikkalaite sekä menetelmä muistipiirin yhteydessä - Google Patents

Muistirakenne, järjestelmä ja elektroniikkalaite sekä menetelmä muistipiirin yhteydessä

Info

Publication number
FI20021620A0
FI20021620A0 FI20021620A FI20021620A FI20021620A0 FI 20021620 A0 FI20021620 A0 FI 20021620A0 FI 20021620 A FI20021620 A FI 20021620A FI 20021620 A FI20021620 A FI 20021620A FI 20021620 A0 FI20021620 A0 FI 20021620A0
Authority
FI
Finland
Prior art keywords
memory
random access
access memory
memory circuit
circuit
Prior art date
Application number
FI20021620A
Other languages
English (en)
Swedish (sv)
Other versions
FI20021620A (fi
Inventor
Jani Klint
Original Assignee
Nokia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nokia Corp filed Critical Nokia Corp
Priority to FI20021620A priority Critical patent/FI20021620A/fi
Publication of FI20021620A0 publication Critical patent/FI20021620A0/fi
Priority to PCT/FI2003/000659 priority patent/WO2004025474A1/en
Priority to EP03750744A priority patent/EP1537483B1/en
Priority to AU2003268967A priority patent/AU2003268967A1/en
Priority to CNA038214148A priority patent/CN1682199A/zh
Priority to KR1020057004022A priority patent/KR100756309B1/ko
Priority to DE60317347T priority patent/DE60317347T2/de
Priority to AT03750744T priority patent/ATE377794T1/de
Priority to US10/659,067 priority patent/US7057911B2/en
Publication of FI20021620A publication Critical patent/FI20021620A/fi

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1668—Details of memory controller
    • G06F13/1684—Details of memory controller using multiple buses
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1668—Details of memory controller
    • G06F13/1694—Configuration of memory controller to different memory types

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Debugging And Monitoring (AREA)
  • Fire Alarms (AREA)
  • Static Random-Access Memory (AREA)
FI20021620A 2002-09-10 2002-09-10 Muistirakenne, järjestelmä ja elektroniikkalaite sekä menetelmä muistipiirin yhteydessä FI20021620A (fi)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FI20021620A FI20021620A (fi) 2002-09-10 2002-09-10 Muistirakenne, järjestelmä ja elektroniikkalaite sekä menetelmä muistipiirin yhteydessä
PCT/FI2003/000659 WO2004025474A1 (en) 2002-09-10 2003-09-08 A memory circuit comprising a non-volatile ram and a ram
EP03750744A EP1537483B1 (en) 2002-09-10 2003-09-08 A memory circuit comprising a non-volatile ram and a ram
AU2003268967A AU2003268967A1 (en) 2002-09-10 2003-09-08 A memory circuit comprising a non-volatile ram and a ram
CNA038214148A CN1682199A (zh) 2002-09-10 2003-09-08 一种包含非易失性ram和ram的存储电路
KR1020057004022A KR100756309B1 (ko) 2002-09-10 2003-09-08 램과 비휘발성 램을 포함하는 메모리 회로
DE60317347T DE60317347T2 (de) 2002-09-10 2003-09-08 Speicherschaltung mit nichtflüchtigem ram und ram
AT03750744T ATE377794T1 (de) 2002-09-10 2003-09-08 Speicherschaltung mit nichtflüchtigem ram und ram
US10/659,067 US7057911B2 (en) 2002-09-10 2003-09-10 Memory structure, a system, and an electronic device, as well as a method in connection with a memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20021620A FI20021620A (fi) 2002-09-10 2002-09-10 Muistirakenne, järjestelmä ja elektroniikkalaite sekä menetelmä muistipiirin yhteydessä

Publications (2)

Publication Number Publication Date
FI20021620A0 true FI20021620A0 (fi) 2002-09-10
FI20021620A FI20021620A (fi) 2004-03-11

Family

ID=8564563

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20021620A FI20021620A (fi) 2002-09-10 2002-09-10 Muistirakenne, järjestelmä ja elektroniikkalaite sekä menetelmä muistipiirin yhteydessä

Country Status (9)

Country Link
US (1) US7057911B2 (fi)
EP (1) EP1537483B1 (fi)
KR (1) KR100756309B1 (fi)
CN (1) CN1682199A (fi)
AT (1) ATE377794T1 (fi)
AU (1) AU2003268967A1 (fi)
DE (1) DE60317347T2 (fi)
FI (1) FI20021620A (fi)
WO (1) WO2004025474A1 (fi)

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US7644239B2 (en) 2004-05-03 2010-01-05 Microsoft Corporation Non-volatile memory cache performance improvement
US7490197B2 (en) 2004-10-21 2009-02-10 Microsoft Corporation Using external memory devices to improve system performance
KR100640555B1 (ko) * 2005-02-07 2006-10-31 삼성전자주식회사 데이터 복사 방법 및 이를 위한 어플리케이션 프로세서
US20070016799A1 (en) * 2005-07-14 2007-01-18 Nokia Corporation DRAM to mass memory interface with security processor
US8914557B2 (en) 2005-12-16 2014-12-16 Microsoft Corporation Optimizing write and wear performance for a memory
US20070147115A1 (en) * 2005-12-28 2007-06-28 Fong-Long Lin Unified memory and controller
US7519754B2 (en) 2005-12-28 2009-04-14 Silicon Storage Technology, Inc. Hard disk drive cache memory and playback device
JP2008009702A (ja) * 2006-06-29 2008-01-17 Matsushita Electric Ind Co Ltd 演算処理システム
KR100851849B1 (ko) * 2006-10-12 2008-08-13 삼성전자주식회사 휴대용 단말기 및 그것의 데이터 기입 및 독출 방법
KR100844406B1 (ko) * 2007-03-12 2008-07-08 한국과학기술원 Ｎｏｒ 플래시 메모리와 ｎａｎｄ 플래시 메모리를 이용한하이브리드 파일 시스템 및 데이터 연산 방법
KR20100123136A (ko) 2009-05-14 2010-11-24 삼성전자주식회사 비휘발성 메모리 장치
US8767450B2 (en) 2007-08-21 2014-07-01 Samsung Electronics Co., Ltd. Memory controllers to refresh memory sectors in response to writing signals and memory systems including the same
US8631203B2 (en) 2007-12-10 2014-01-14 Microsoft Corporation Management of external memory functioning as virtual cache
US8139390B2 (en) * 2008-07-08 2012-03-20 Mosaid Technologies Incorporated Mixed data rates in memory devices and systems
US9032151B2 (en) 2008-09-15 2015-05-12 Microsoft Technology Licensing, Llc Method and system for ensuring reliability of cache data and metadata subsequent to a reboot
US8032707B2 (en) 2008-09-15 2011-10-04 Microsoft Corporation Managing cache data and metadata
US7953774B2 (en) 2008-09-19 2011-05-31 Microsoft Corporation Aggregation of write traffic to a data store
US8250319B2 (en) * 2009-09-29 2012-08-21 Freescale Semiconductor, Inc. Operating an emulated electrically erasable (EEE) memory
KR20120028484A (ko) 2010-09-15 2012-03-23 삼성전자주식회사 모바일 기기에 채용하기 적합한 복합형 반도체 장치
US9135965B2 (en) * 2010-12-17 2015-09-15 Everspin Technologies, Inc. Memory controller and method for interleaving DRAM and MRAM accesses
EP2761465B1 (en) 2011-09-30 2022-02-09 Intel Corporation Autonomous initialization of non-volatile random access memory in a computer system
EP2761476B1 (en) 2011-09-30 2017-10-25 Intel Corporation Apparatus, method and system that stores bios in non-volatile random access memory
EP2761469B1 (en) 2011-09-30 2019-11-13 Intel Corporation Non-volatile random access memory (nvram) as a replacement for traditional mass storage
CN103946811B (zh) 2011-09-30 2017-08-11 英特尔公司 用于实现具有不同操作模式的多级存储器分级结构的设备和方法
US10096350B2 (en) * 2012-03-07 2018-10-09 Medtronic, Inc. Memory array with flash and random access memory and method therefor, reading data from the flash memory without storing the data in the random access memory
US9280497B2 (en) 2012-12-21 2016-03-08 Dell Products Lp Systems and methods for support of non-volatile memory on a DDR memory channel
CN104575595B (zh) * 2014-12-12 2017-07-07 杭州华澜微电子股份有限公司 非易失性随机存取的存储装置
KR102367512B1 (ko) 2015-09-08 2022-02-24 삼성전자주식회사 시스템 온 패키지
CN112566724A (zh) * 2018-08-14 2021-03-26 L·布伦 饮料容器的处理机器和处理饮料容器的方法
CN110731012B (zh) 2019-04-15 2021-01-29 长江存储科技有限责任公司 具有处理器和异构存储器的一体化半导体器件及其形成方法

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US5056010A (en) * 1989-10-30 1991-10-08 Industrial Technology Research Institute Pointer based DMA controller
JP3619523B2 (ja) * 1996-12-04 2005-02-09 株式会社ルネサステクノロジ 半導体装置
US6418506B1 (en) * 1996-12-31 2002-07-09 Intel Corporation Integrated circuit memory and method for transferring data using a volatile memory to buffer data for a nonvolatile memory array
JP3640802B2 (ja) * 1998-06-08 2005-04-20 富士通株式会社 データバックアップ方式
US6302972B1 (en) * 1998-12-07 2001-10-16 Sumitomo Special Metals Co., Ltd Nanocomposite magnet material and method for producing nanocomposite magnet
KR100686681B1 (ko) 1999-02-01 2007-02-27 가부시키가이샤 히타치세이사쿠쇼 반도체 집적 회로 및 불휘발성 기억 소자
JP3358612B2 (ja) * 1999-03-15 2002-12-24 日本電気株式会社 半導体集積回路
JP4017177B2 (ja) * 2001-02-28 2007-12-05 スパンション エルエルシー メモリ装置
JP4049297B2 (ja) * 2001-06-11 2008-02-20 株式会社ルネサステクノロジ 半導体記憶装置
US7206904B2 (en) * 2002-03-20 2007-04-17 Hewlett-Packard Development Company, L.P. Method and system for buffering multiple requests from multiple devices to a memory
US20040079445A1 (en) * 2002-10-24 2004-04-29 Zhongmin Chen High performance magnetic materials with low flux-aging loss

Also Published As

Publication number Publication date
AU2003268967A1 (en) 2004-04-30
ATE377794T1 (de) 2007-11-15
DE60317347T2 (de) 2008-03-06
EP1537483A1 (en) 2005-06-08
WO2004025474A1 (en) 2004-03-25
KR20050042183A (ko) 2005-05-04
EP1537483B1 (en) 2007-11-07
CN1682199A (zh) 2005-10-12
US7057911B2 (en) 2006-06-06
FI20021620A (fi) 2004-03-11
DE60317347D1 (de) 2007-12-20
US20040136259A1 (en) 2004-07-15
KR100756309B1 (ko) 2007-09-06

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