FI122622B - Valoa emittoiva puolijohdelaite ja valmistusmenetelmä - Google Patents
Valoa emittoiva puolijohdelaite ja valmistusmenetelmä Download PDFInfo
- Publication number
- FI122622B FI122622B FI20095627A FI20095627A FI122622B FI 122622 B FI122622 B FI 122622B FI 20095627 A FI20095627 A FI 20095627A FI 20095627 A FI20095627 A FI 20095627A FI 122622 B FI122622 B FI 122622B
- Authority
- FI
- Finland
- Prior art keywords
- layer
- tco
- contact
- contact layer
- reflective
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 45
- 238000000034 method Methods 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title description 15
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 239000000203 mixture Substances 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 7
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 165
- 239000000463 material Substances 0.000 description 17
- 229910002601 GaN Inorganic materials 0.000 description 12
- 239000010931 gold Substances 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 239000003963 antioxidant agent Substances 0.000 description 4
- 230000003078 antioxidant effect Effects 0.000 description 4
- 230000003064 anti-oxidating effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000306 component Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 101100421135 Caenorhabditis elegans sel-5 gene Proteins 0.000 description 1
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 1
- 241001122767 Theaceae Species 0.000 description 1
- QAGHCTOLNPHRES-UHFFFAOYSA-N [Sn]=O.[Ra] Chemical compound [Sn]=O.[Ra] QAGHCTOLNPHRES-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000005246 galvanizing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- XULSCZPZVQIMFM-IPZQJPLYSA-N odevixibat Chemical compound C12=CC(SC)=C(OCC(=O)N[C@@H](C(=O)N[C@@H](CC)C(O)=O)C=3C=CC(O)=CC=3)C=C2S(=O)(=O)NC(CCCC)(CCCC)CN1C1=CC=CC=C1 XULSCZPZVQIMFM-IPZQJPLYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20095627A FI122622B (fi) | 2009-06-05 | 2009-06-05 | Valoa emittoiva puolijohdelaite ja valmistusmenetelmä |
| JP2012513647A JP2012529170A (ja) | 2009-06-05 | 2010-06-03 | 発光半導体装置及び製造方法 |
| CN2010800247358A CN102460743A (zh) | 2009-06-05 | 2010-06-03 | 发光半导体器件及其制造方法 |
| EP10783033A EP2438628A1 (en) | 2009-06-05 | 2010-06-03 | Light emitting semiconductor device and method for manufacturing |
| KR1020117030326A KR20120030430A (ko) | 2009-06-05 | 2010-06-03 | 발광 반도체 디바이스 및 제조방법 |
| PCT/FI2010/050454 WO2010139860A1 (en) | 2009-06-05 | 2010-06-03 | Light emitting semiconductor device and method for manufacturing |
| RU2011144445/28A RU2011144445A (ru) | 2009-06-05 | 2010-06-03 | Светоизлучающее полупроводниковое устройство и способ его изготовления |
| TW099117868A TW201110419A (en) | 2009-06-05 | 2010-06-03 | Light emitting semiconductor device and method for manufacturing |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20095627 | 2009-06-05 | ||
| FI20095627A FI122622B (fi) | 2009-06-05 | 2009-06-05 | Valoa emittoiva puolijohdelaite ja valmistusmenetelmä |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI20095627A0 FI20095627A0 (fi) | 2009-06-05 |
| FI20095627A FI20095627A (fi) | 2010-12-06 |
| FI122622B true FI122622B (fi) | 2012-04-30 |
Family
ID=40825331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI20095627A FI122622B (fi) | 2009-06-05 | 2009-06-05 | Valoa emittoiva puolijohdelaite ja valmistusmenetelmä |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP2438628A1 (ko) |
| JP (1) | JP2012529170A (ko) |
| KR (1) | KR20120030430A (ko) |
| CN (1) | CN102460743A (ko) |
| FI (1) | FI122622B (ko) |
| RU (1) | RU2011144445A (ko) |
| TW (1) | TW201110419A (ko) |
| WO (1) | WO2010139860A1 (ko) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102637790A (zh) * | 2012-05-03 | 2012-08-15 | 杭州士兰明芯科技有限公司 | 一种led芯片及其相应的制作方法 |
| CN103117343B (zh) * | 2013-02-05 | 2016-06-15 | 海迪科（南通）光电科技有限公司 | 具有反射镜结构的led发光器件及其制备方法 |
| RU2530487C1 (ru) * | 2013-06-04 | 2014-10-10 | Федеральное государственное бюджетное учреждение науки "Научно-технологический центр микроэлектроники и субмикронных гетероструктур Российской академии наук" | Способ изготовления нитридного светоизлучающего диода |
| CN105280666A (zh) * | 2015-11-18 | 2016-01-27 | 海迪科（南通）光电科技有限公司 | 一种集成阵列式汽车大灯led芯片 |
| CN105280777B (zh) * | 2015-11-25 | 2018-03-13 | 湘能华磊光电股份有限公司 | Led芯片及制备方法 |
| US11600656B2 (en) * | 2020-12-14 | 2023-03-07 | Lumileds Llc | Light emitting diode device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW437104B (en) * | 1999-05-25 | 2001-05-28 | Wang Tien Yang | Semiconductor light-emitting device and method for manufacturing the same |
| TWI322461B (en) * | 2004-08-30 | 2010-03-21 | Prime View Int Co Ltd | Method of fabricating poly-crystal ito thin film and poly-crystal ito electrode |
| WO2007004745A1 (en) * | 2005-07-05 | 2007-01-11 | Showa Denko K.K. | Light-emitting diode and method for fabrication thereof |
| US20070018182A1 (en) * | 2005-07-20 | 2007-01-25 | Goldeneye, Inc. | Light emitting diodes with improved light extraction and reflectivity |
| KR100661711B1 (ko) * | 2005-08-30 | 2006-12-26 | 엘지이노텍 주식회사 | 반사 전극을 구비한 질화물 반도체 발광소자 및 그 제조방법 |
| JP5016831B2 (ja) * | 2006-03-17 | 2012-09-05 | キヤノン株式会社 | 酸化物半導体薄膜トランジスタを用いた発光素子及びこれを用いた画像表示装置 |
| GB2447091B8 (en) * | 2007-03-02 | 2010-01-13 | Photonstar Led Ltd | Vertical light emitting diodes |
-
2009
- 2009-06-05 FI FI20095627A patent/FI122622B/fi not_active IP Right Cessation
-
2010
- 2010-06-03 KR KR1020117030326A patent/KR20120030430A/ko not_active Application Discontinuation
- 2010-06-03 EP EP10783033A patent/EP2438628A1/en not_active Withdrawn
- 2010-06-03 TW TW099117868A patent/TW201110419A/zh unknown
- 2010-06-03 WO PCT/FI2010/050454 patent/WO2010139860A1/en active Application Filing
- 2010-06-03 CN CN2010800247358A patent/CN102460743A/zh active Pending
- 2010-06-03 RU RU2011144445/28A patent/RU2011144445A/ru not_active Application Discontinuation
- 2010-06-03 JP JP2012513647A patent/JP2012529170A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN102460743A (zh) | 2012-05-16 |
| RU2011144445A (ru) | 2013-07-20 |
| KR20120030430A (ko) | 2012-03-28 |
| FI20095627A (fi) | 2010-12-06 |
| TW201110419A (en) | 2011-03-16 |
| EP2438628A1 (en) | 2012-04-11 |
| FI20095627A0 (fi) | 2009-06-05 |
| WO2010139860A1 (en) | 2010-12-09 |
| JP2012529170A (ja) | 2012-11-15 |
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