FI105605B - Planarisoiva eriste - Google Patents
Planarisoiva eriste Download PDFInfo
- Publication number
- FI105605B FI105605B FI901654A FI901654A FI105605B FI 105605 B FI105605 B FI 105605B FI 901654 A FI901654 A FI 901654A FI 901654 A FI901654 A FI 901654A FI 105605 B FI105605 B FI 105605B
- Authority
- FI
- Finland
- Prior art keywords
- planar dielectric
- filler
- polymer
- thermal conductivity
- planarizing
- Prior art date
Links
- 229920000642 polymer Polymers 0.000 claims description 9
- 239000000945 filler Substances 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 5
- 229920002577 polybenzoxazole Polymers 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 229920000620 organic polymer Polymers 0.000 claims description 2
- 239000012212 insulator Substances 0.000 description 9
- 238000009413 insulation Methods 0.000 description 6
- 229920003023 plastic Polymers 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- -1 (3-amino-4-hydroxyphenyl) - Chemical class 0.000 description 1
- HZONRRHNQILCNO-UHFFFAOYSA-N 1-methyl-2h-pyridine Chemical compound CN1CC=CC=C1 HZONRRHNQILCNO-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012704 polymeric precursor Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Organic Insulating Materials (AREA)
- Inorganic Insulating Materials (AREA)
- Formation Of Insulating Films (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3913981 | 1989-04-27 | ||
| DE3913981 | 1989-04-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FI901654A0 FI901654A0 (fi) | 1990-04-02 |
| FI105605B true FI105605B (fi) | 2000-09-15 |
Family
ID=6379630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI901654A FI105605B (fi) | 1989-04-27 | 1990-04-02 | Planarisoiva eriste |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5037876A (ja) |
| EP (1) | EP0394767B1 (ja) |
| JP (1) | JP3080965B2 (ja) |
| KR (1) | KR0165113B1 (ja) |
| DE (1) | DE59010613D1 (ja) |
| FI (1) | FI105605B (ja) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5955535A (en) | 1993-11-29 | 1999-09-21 | Cornell Research Foundation, Inc. | Method for preparing silicate-polymer composite |
| US5670262A (en) * | 1995-05-09 | 1997-09-23 | The Dow Chemical Company | Printing wiring board(s) having polyimidebenzoxazole dielectric layer(s) and the manufacture thereof |
| JPH10330188A (ja) * | 1997-05-29 | 1998-12-15 | Kobe Steel Ltd | ダイヤモンドの微細加工方法 |
| DE19756887A1 (de) * | 1997-12-19 | 1999-07-01 | Siemens Ag | Kunststoffverbundkörper |
| JP2001098160A (ja) * | 1999-09-30 | 2001-04-10 | Sumitomo Bakelite Co Ltd | 絶縁材用樹脂組成物及びこれを用いた絶縁材 |
| US7781063B2 (en) * | 2003-07-11 | 2010-08-24 | Siemens Energy, Inc. | High thermal conductivity materials with grafted surface functional groups |
| US7033670B2 (en) * | 2003-07-11 | 2006-04-25 | Siemens Power Generation, Inc. | LCT-epoxy polymers with HTC-oligomers and method for making the same |
| US7553438B2 (en) * | 2004-06-15 | 2009-06-30 | Siemens Energy, Inc. | Compression of resin impregnated insulating tapes |
| US8030818B2 (en) * | 2004-06-15 | 2011-10-04 | Siemens Energy, Inc. | Stator coil with improved heat dissipation |
| US7776392B2 (en) * | 2005-04-15 | 2010-08-17 | Siemens Energy, Inc. | Composite insulation tape with loaded HTC materials |
| US8216672B2 (en) * | 2004-06-15 | 2012-07-10 | Siemens Energy, Inc. | Structured resin systems with high thermal conductivity fillers |
| US7592045B2 (en) * | 2004-06-15 | 2009-09-22 | Siemens Energy, Inc. | Seeding of HTC fillers to form dendritic structures |
| US20080050580A1 (en) * | 2004-06-15 | 2008-02-28 | Stevens Gary C | High Thermal Conductivity Mica Paper Tape |
| US20050277721A1 (en) | 2004-06-15 | 2005-12-15 | Siemens Westinghouse Power Corporation | High thermal conductivity materials aligned within resins |
| US20050274774A1 (en) * | 2004-06-15 | 2005-12-15 | Smith James D | Insulation paper with high thermal conductivity materials |
| US7553781B2 (en) * | 2004-06-15 | 2009-06-30 | Siemens Energy, Inc. | Fabrics with high thermal conductivity coatings |
| WO2006076604A2 (en) * | 2005-01-14 | 2006-07-20 | Cabot Corporation | Processes for planarizing substrates and encapsulating printable electronic features |
| US7651963B2 (en) * | 2005-04-15 | 2010-01-26 | Siemens Energy, Inc. | Patterning on surface with high thermal conductivity materials |
| US7846853B2 (en) * | 2005-04-15 | 2010-12-07 | Siemens Energy, Inc. | Multi-layered platelet structure |
| US7781057B2 (en) * | 2005-06-14 | 2010-08-24 | Siemens Energy, Inc. | Seeding resins for enhancing the crystallinity of polymeric substructures |
| US8357433B2 (en) * | 2005-06-14 | 2013-01-22 | Siemens Energy, Inc. | Polymer brushes |
| US20070026221A1 (en) * | 2005-06-14 | 2007-02-01 | Siemens Power Generation, Inc. | Morphological forms of fillers for electrical insulation |
| US7851059B2 (en) * | 2005-06-14 | 2010-12-14 | Siemens Energy, Inc. | Nano and meso shell-core control of physical properties and performance of electrically insulating composites |
| US7955661B2 (en) * | 2005-06-14 | 2011-06-07 | Siemens Energy, Inc. | Treatment of micropores in mica materials |
| US7655295B2 (en) | 2005-06-14 | 2010-02-02 | Siemens Energy, Inc. | Mix of grafted and non-grafted particles in a resin |
| US7547847B2 (en) * | 2006-09-19 | 2009-06-16 | Siemens Energy, Inc. | High thermal conductivity dielectric tape |
| US8101231B2 (en) | 2007-12-07 | 2012-01-24 | Cabot Corporation | Processes for forming photovoltaic conductive features from multiple inks |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3700597A (en) * | 1967-03-10 | 1972-10-24 | Allied Chem | Dielectric compositions |
| JPS57111034A (en) * | 1980-12-10 | 1982-07-10 | Hitachi Ltd | Semiconductor device and its manufacture |
| JPS5860563A (ja) * | 1981-10-06 | 1983-04-11 | Mitsubishi Electric Corp | 電子部品の保護膜 |
| JPS59145202A (ja) * | 1983-02-07 | 1984-08-20 | Dainippon Ink & Chem Inc | 輻射線硬化型樹脂組成物 |
| US4738999A (en) * | 1986-03-31 | 1988-04-19 | Lord Corporation | Fiber reinforced composites |
| US4888247A (en) * | 1986-08-27 | 1989-12-19 | General Electric Company | Low-thermal-expansion, heat conducting laminates having layers of metal and reinforced polymer matrix composite |
| US4845183A (en) * | 1987-11-24 | 1989-07-04 | Hoechst Celanese Corporation | Heat resistant polyamide and polybenzoxazole from bis-((amino-hydroxyphenyl)hexafluoroisopropyl)diphenyl ethers |
-
1990
- 1990-04-02 FI FI901654A patent/FI105605B/fi not_active IP Right Cessation
- 1990-04-05 US US07/504,931 patent/US5037876A/en not_active Expired - Lifetime
- 1990-04-12 EP EP90107014A patent/EP0394767B1/de not_active Expired - Lifetime
- 1990-04-12 DE DE59010613T patent/DE59010613D1/de not_active Expired - Fee Related
- 1990-04-25 JP JP02111597A patent/JP3080965B2/ja not_active Expired - Fee Related
- 1990-04-26 KR KR1019900005846A patent/KR0165113B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR900017123A (ko) | 1990-11-15 |
| EP0394767A2 (de) | 1990-10-31 |
| JPH034405A (ja) | 1991-01-10 |
| DE59010613D1 (de) | 1997-02-06 |
| EP0394767A3 (de) | 1991-07-24 |
| KR0165113B1 (ko) | 1999-02-01 |
| JP3080965B2 (ja) | 2000-08-28 |
| FI901654A0 (fi) | 1990-04-02 |
| EP0394767B1 (de) | 1996-12-27 |
| US5037876A (en) | 1991-08-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM | Patent lapsed |
Owner name: SIEMENS AKTIENGESELLSCHAFT |