FI901654A0 - Planariserande dielektrikum. - Google Patents

Planariserande dielektrikum.

Info

Publication number
FI901654A0
FI901654A0 FI901654A FI901654A FI901654A0 FI 901654 A0 FI901654 A0 FI 901654A0 FI 901654 A FI901654 A FI 901654A FI 901654 A FI901654 A FI 901654A FI 901654 A0 FI901654 A0 FI 901654A0
Authority
FI
Finland
Prior art keywords
planariserande
dielektrikum
planariserande dielektrikum
Prior art date
Application number
FI901654A
Other languages
English (en)
Other versions
FI105605B (fi
Inventor
Siegfried Birkle
Albert Hammerschmidt
Johann Kammermaier
Rainer Leuschner
Rolf-W Schulte
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of FI901654A0 publication Critical patent/FI901654A0/fi
Application granted granted Critical
Publication of FI105605B publication Critical patent/FI105605B/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Organic Insulating Materials (AREA)
  • Formation Of Insulating Films (AREA)
  • Inorganic Insulating Materials (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
FI901654A 1989-04-27 1990-04-02 Planarisoiva eriste FI105605B (fi)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3913981 1989-04-27
DE3913981 1989-04-27

Publications (2)

Publication Number Publication Date
FI901654A0 true FI901654A0 (fi) 1990-04-02
FI105605B FI105605B (fi) 2000-09-15

Family

ID=6379630

Family Applications (1)

Application Number Title Priority Date Filing Date
FI901654A FI105605B (fi) 1989-04-27 1990-04-02 Planarisoiva eriste

Country Status (6)

Country Link
US (1) US5037876A (fi)
EP (1) EP0394767B1 (fi)
JP (1) JP3080965B2 (fi)
KR (1) KR0165113B1 (fi)
DE (1) DE59010613D1 (fi)
FI (1) FI105605B (fi)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5955535A (en) 1993-11-29 1999-09-21 Cornell Research Foundation, Inc. Method for preparing silicate-polymer composite
US5670262A (en) * 1995-05-09 1997-09-23 The Dow Chemical Company Printing wiring board(s) having polyimidebenzoxazole dielectric layer(s) and the manufacture thereof
JPH10330188A (ja) * 1997-05-29 1998-12-15 Kobe Steel Ltd ダイヤモンドの微細加工方法
DE19756887A1 (de) * 1997-12-19 1999-07-01 Siemens Ag Kunststoffverbundkörper
JP2001098160A (ja) * 1999-09-30 2001-04-10 Sumitomo Bakelite Co Ltd 絶縁材用樹脂組成物及びこれを用いた絶縁材
US7033670B2 (en) * 2003-07-11 2006-04-25 Siemens Power Generation, Inc. LCT-epoxy polymers with HTC-oligomers and method for making the same
US7781063B2 (en) 2003-07-11 2010-08-24 Siemens Energy, Inc. High thermal conductivity materials with grafted surface functional groups
US7553438B2 (en) * 2004-06-15 2009-06-30 Siemens Energy, Inc. Compression of resin impregnated insulating tapes
US8030818B2 (en) * 2004-06-15 2011-10-04 Siemens Energy, Inc. Stator coil with improved heat dissipation
US8216672B2 (en) * 2004-06-15 2012-07-10 Siemens Energy, Inc. Structured resin systems with high thermal conductivity fillers
US20050274774A1 (en) * 2004-06-15 2005-12-15 Smith James D Insulation paper with high thermal conductivity materials
US20080050580A1 (en) * 2004-06-15 2008-02-28 Stevens Gary C High Thermal Conductivity Mica Paper Tape
US7776392B2 (en) * 2005-04-15 2010-08-17 Siemens Energy, Inc. Composite insulation tape with loaded HTC materials
US20050277721A1 (en) 2004-06-15 2005-12-15 Siemens Westinghouse Power Corporation High thermal conductivity materials aligned within resins
US7592045B2 (en) * 2004-06-15 2009-09-22 Siemens Energy, Inc. Seeding of HTC fillers to form dendritic structures
US7553781B2 (en) * 2004-06-15 2009-06-30 Siemens Energy, Inc. Fabrics with high thermal conductivity coatings
WO2006076604A2 (en) * 2005-01-14 2006-07-20 Cabot Corporation Processes for planarizing substrates and encapsulating printable electronic features
US7846853B2 (en) * 2005-04-15 2010-12-07 Siemens Energy, Inc. Multi-layered platelet structure
US7651963B2 (en) * 2005-04-15 2010-01-26 Siemens Energy, Inc. Patterning on surface with high thermal conductivity materials
US7955661B2 (en) * 2005-06-14 2011-06-07 Siemens Energy, Inc. Treatment of micropores in mica materials
US8357433B2 (en) * 2005-06-14 2013-01-22 Siemens Energy, Inc. Polymer brushes
US20070026221A1 (en) * 2005-06-14 2007-02-01 Siemens Power Generation, Inc. Morphological forms of fillers for electrical insulation
US7781057B2 (en) * 2005-06-14 2010-08-24 Siemens Energy, Inc. Seeding resins for enhancing the crystallinity of polymeric substructures
US7851059B2 (en) * 2005-06-14 2010-12-14 Siemens Energy, Inc. Nano and meso shell-core control of physical properties and performance of electrically insulating composites
US7655295B2 (en) 2005-06-14 2010-02-02 Siemens Energy, Inc. Mix of grafted and non-grafted particles in a resin
US7547847B2 (en) * 2006-09-19 2009-06-16 Siemens Energy, Inc. High thermal conductivity dielectric tape
US8101231B2 (en) 2007-12-07 2012-01-24 Cabot Corporation Processes for forming photovoltaic conductive features from multiple inks

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700597A (en) * 1967-03-10 1972-10-24 Allied Chem Dielectric compositions
JPS57111034A (en) * 1980-12-10 1982-07-10 Hitachi Ltd Semiconductor device and its manufacture
JPS5860563A (ja) * 1981-10-06 1983-04-11 Mitsubishi Electric Corp 電子部品の保護膜
JPS59145202A (ja) * 1983-02-07 1984-08-20 Dainippon Ink & Chem Inc 輻射線硬化型樹脂組成物
US4738999A (en) * 1986-03-31 1988-04-19 Lord Corporation Fiber reinforced composites
US4888247A (en) * 1986-08-27 1989-12-19 General Electric Company Low-thermal-expansion, heat conducting laminates having layers of metal and reinforced polymer matrix composite
US4845183A (en) * 1987-11-24 1989-07-04 Hoechst Celanese Corporation Heat resistant polyamide and polybenzoxazole from bis-((amino-hydroxyphenyl)hexafluoroisopropyl)diphenyl ethers

Also Published As

Publication number Publication date
FI105605B (fi) 2000-09-15
US5037876A (en) 1991-08-06
KR0165113B1 (ko) 1999-02-01
JPH034405A (ja) 1991-01-10
KR900017123A (ko) 1990-11-15
JP3080965B2 (ja) 2000-08-28
EP0394767A3 (de) 1991-07-24
DE59010613D1 (de) 1997-02-06
EP0394767A2 (de) 1990-10-31
EP0394767B1 (de) 1996-12-27

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Legal Events

Date Code Title Description
MM Patent lapsed

Owner name: SIEMENS AKTIENGESELLSCHAFT