KR900017123A - 플레이너 유전체 - Google Patents

플레이너 유전체 Download PDF

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Publication number
KR900017123A
KR900017123A KR1019900005846A KR900005846A KR900017123A KR 900017123 A KR900017123 A KR 900017123A KR 1019900005846 A KR1019900005846 A KR 1019900005846A KR 900005846 A KR900005846 A KR 900005846A KR 900017123 A KR900017123 A KR 900017123A
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KR
South Korea
Prior art keywords
planar dielectric
filler
polymer
dielectric
planar
Prior art date
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KR1019900005846A
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English (en)
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KR0165113B1 (ko
Inventor
지크프리트 비르클레
알베르트 함머쉬미트
요한 캄머마이어
라이너 로이쉬너
로프-베 슐테
Original Assignee
크리스트, 퀼
지멘스 악티엔게젤샤프트
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Application filed by 크리스트, 퀼, 지멘스 악티엔게젤샤프트 filed Critical 크리스트, 퀼
Publication of KR900017123A publication Critical patent/KR900017123A/ko
Application granted granted Critical
Publication of KR0165113B1 publication Critical patent/KR0165113B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

내용 없음

Description

플레이너 유전체
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (6)

  1. 전자 부품용 플레이너 유전체에 있어서, 내열성 유기 폴리머로된 매트릭스로 이루어지며, 상기 매트릭스 내에 높은 열전도율 및 양호한 유전 특성을 갖는, 산소 플라즈마에 에칭 가능한 고체 충진제가 미세하게 분포되어 삽입되는 것을 특징으로 하는 플레이너 유전체.
  2. 제1항에 있어서, 충진제의 양이 30부피% 까지인 것을 특징으로 하는 플레이너 유전체.;
  3. 제1항 또는 2항에 있어서, 충진제가 비결정 탄화수소(a-C:H)인 것을 특징으로 하는 플레이너 유전체.
  4. 제1항 내지 3항중 어느 한항에 있어서, 충진제가 입자크기〈 50nm를 갖는 것을 특징으로 하는 플레이너 유전체.
  5. 제1항 내지 4항중 어느 한 항 또는 다수항에 있어서, 폴리머가 도전성 폴리머 또는 반도체 폴리머인 것을 특징으로 하는 플레이너 유전체.
  6. 제5항에 있어서, 폴리머가 폴리벤조옥사졸인 것을 특징으로 하는 플레이너 유전체.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900005846A 1989-04-27 1990-04-26 플레이너 유전체 KR0165113B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DEP3913981.6 1989-04-27
DEP39,13981.6 1989-04-27
DE3913981 1989-04-27

Publications (2)

Publication Number Publication Date
KR900017123A true KR900017123A (ko) 1990-11-15
KR0165113B1 KR0165113B1 (ko) 1999-02-01

Family

ID=6379630

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900005846A KR0165113B1 (ko) 1989-04-27 1990-04-26 플레이너 유전체

Country Status (6)

Country Link
US (1) US5037876A (ko)
EP (1) EP0394767B1 (ko)
JP (1) JP3080965B2 (ko)
KR (1) KR0165113B1 (ko)
DE (1) DE59010613D1 (ko)
FI (1) FI105605B (ko)

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JPH10330188A (ja) * 1997-05-29 1998-12-15 Kobe Steel Ltd ダイヤモンドの微細加工方法
DE19756887A1 (de) * 1997-12-19 1999-07-01 Siemens Ag Kunststoffverbundkörper
JP2001098160A (ja) * 1999-09-30 2001-04-10 Sumitomo Bakelite Co Ltd 絶縁材用樹脂組成物及びこれを用いた絶縁材
US7781063B2 (en) 2003-07-11 2010-08-24 Siemens Energy, Inc. High thermal conductivity materials with grafted surface functional groups
US7033670B2 (en) * 2003-07-11 2006-04-25 Siemens Power Generation, Inc. LCT-epoxy polymers with HTC-oligomers and method for making the same
US20050277721A1 (en) 2004-06-15 2005-12-15 Siemens Westinghouse Power Corporation High thermal conductivity materials aligned within resins
US8030818B2 (en) * 2004-06-15 2011-10-04 Siemens Energy, Inc. Stator coil with improved heat dissipation
US7592045B2 (en) * 2004-06-15 2009-09-22 Siemens Energy, Inc. Seeding of HTC fillers to form dendritic structures
US7553438B2 (en) * 2004-06-15 2009-06-30 Siemens Energy, Inc. Compression of resin impregnated insulating tapes
US20050274774A1 (en) * 2004-06-15 2005-12-15 Smith James D Insulation paper with high thermal conductivity materials
US7776392B2 (en) * 2005-04-15 2010-08-17 Siemens Energy, Inc. Composite insulation tape with loaded HTC materials
US8216672B2 (en) * 2004-06-15 2012-07-10 Siemens Energy, Inc. Structured resin systems with high thermal conductivity fillers
US7553781B2 (en) * 2004-06-15 2009-06-30 Siemens Energy, Inc. Fabrics with high thermal conductivity coatings
US20080050580A1 (en) * 2004-06-15 2008-02-28 Stevens Gary C High Thermal Conductivity Mica Paper Tape
US20060160373A1 (en) * 2005-01-14 2006-07-20 Cabot Corporation Processes for planarizing substrates and encapsulating printable electronic features
US7651963B2 (en) * 2005-04-15 2010-01-26 Siemens Energy, Inc. Patterning on surface with high thermal conductivity materials
US7846853B2 (en) * 2005-04-15 2010-12-07 Siemens Energy, Inc. Multi-layered platelet structure
US7851059B2 (en) * 2005-06-14 2010-12-14 Siemens Energy, Inc. Nano and meso shell-core control of physical properties and performance of electrically insulating composites
US20070026221A1 (en) * 2005-06-14 2007-02-01 Siemens Power Generation, Inc. Morphological forms of fillers for electrical insulation
US7781057B2 (en) * 2005-06-14 2010-08-24 Siemens Energy, Inc. Seeding resins for enhancing the crystallinity of polymeric substructures
US7955661B2 (en) * 2005-06-14 2011-06-07 Siemens Energy, Inc. Treatment of micropores in mica materials
US7655295B2 (en) 2005-06-14 2010-02-02 Siemens Energy, Inc. Mix of grafted and non-grafted particles in a resin
US8357433B2 (en) * 2005-06-14 2013-01-22 Siemens Energy, Inc. Polymer brushes
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Also Published As

Publication number Publication date
JPH034405A (ja) 1991-01-10
KR0165113B1 (ko) 1999-02-01
US5037876A (en) 1991-08-06
FI901654A0 (fi) 1990-04-02
FI105605B (fi) 2000-09-15
JP3080965B2 (ja) 2000-08-28
EP0394767A2 (de) 1990-10-31
EP0394767A3 (de) 1991-07-24
DE59010613D1 (de) 1997-02-06
EP0394767B1 (de) 1996-12-27

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