FI104451B - Elektrisk matningskrets speciellt för APD-dioder - Google Patents
Elektrisk matningskrets speciellt för APD-dioder Download PDFInfo
- Publication number
- FI104451B FI104451B FI921161A FI921161A FI104451B FI 104451 B FI104451 B FI 104451B FI 921161 A FI921161 A FI 921161A FI 921161 A FI921161 A FI 921161A FI 104451 B FI104451 B FI 104451B
- Authority
- FI
- Finland
- Prior art keywords
- voltage
- temperature
- output
- supply circuit
- source
- Prior art date
Links
- 230000001419 dependent effect Effects 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 15
- 230000015556 catabolic process Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
- H03F3/087—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with IC amplifier blocks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Optical Communication System (AREA)
- Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Electrophonic Musical Instruments (AREA)
- Pens And Brushes (AREA)
- Apparatus For Radiation Diagnosis (AREA)
- Gyroscopes (AREA)
- Control Of El Displays (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Networks Using Active Elements (AREA)
Claims (3)
1. Elektrisk matningskrets, kännetecknad av en första teraperaturavhängig spänningskälla (VS1), vars 5 utgängsspänning (UI) är konstant och vilken är kopplad tili ingängen av en första spänningsförstärkare (AI) med inställbar förstärkning (ai), och ytterligare av en andra temperaturavhängig spänningskälla (VS2), vars utgängsspän-ning (U2) är väsentligen lika stor soin den matematiska pro-10 dukten av en konstant (C) och temperaturen (t) mätt vid en mätningspunkt och vilken är kopplad tili ingängen av en i i andra spänningsförstärkare (A2) med inställbar förstärkning (a2), varvid den första spänningsförstärkarens utgängsspän-ning och den andra spänningsförstärkarens utgängsspänning 15 är adderade med varandra.
2. Elektrisk matningskrets enligt patentkrav 1, * kännetecknad av att en andra temperaturavhängig spänningskälla utgörs av en tredje temperaturoavhängig spänningskälla (VS3) med en tredje konstant utgängsspänning j 20 (U3), och en seriekoppling mellan en strömkälla och en tem peraturavhängig impedans (D), varvid nämnda tredje utgängs-·...; spänning är lika stor som spänningen (U4) som genereras av ! , 1 nämnda strömkälla (CS) över impedansen och som subtraheras : ..... därifrän. · .25
3. Elektrisk matningskrets enligt patentkrav 2, , [ kännetecknad av att nämnda impedans utgörs av en • « · ’· 1" halvledardiod (D) kopplad i framätriktningen. I I · • · · • « · • · « 1 • · · : : · • · · • · · • · · _ I « « · • « I • · · * « • « · « · • · I t t
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL9100476 | 1991-03-18 | ||
| NL9100476A NL9100476A (nl) | 1991-03-18 | 1991-03-18 | Electrische voedingsschakeling, in het bijzonder voor apds. |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI921161A0 FI921161A0 (fi) | 1992-03-18 |
| FI921161A FI921161A (fi) | 1992-09-19 |
| FI104451B true FI104451B (sv) | 2000-01-31 |
Family
ID=19859030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI921161A FI104451B (sv) | 1991-03-18 | 1992-03-18 | Elektrisk matningskrets speciellt för APD-dioder |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP0504974B1 (sv) |
| JP (1) | JP2821829B2 (sv) |
| AT (1) | ATE127619T1 (sv) |
| DE (1) | DE69204508T2 (sv) |
| FI (1) | FI104451B (sv) |
| NL (1) | NL9100476A (sv) |
| NO (1) | NO303609B1 (sv) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69739284D1 (de) | 1997-11-05 | 2009-04-16 | St Microelectronics Srl | Temperaturkorrelierter Spannungsgeneratorschaltkreis und zugehöriger Spannungsregler für die Speisung einer Speicherzelle mit einer einzigen Stromversorgung, insbesondere vom FLASH-Typ |
| US7405552B2 (en) | 2006-01-04 | 2008-07-29 | Micron Technology, Inc. | Semiconductor temperature sensor with high sensitivity |
| JP2006303524A (ja) * | 2006-06-08 | 2006-11-02 | Oki Comtec Ltd | アバランシェフォトダイオード用バイアス電圧制御回路およびその調整方法 |
| CN115542229B (zh) * | 2022-11-25 | 2023-03-24 | 中国兵器装备集团自动化研究所有限公司 | 一种复杂温度环境下恒流源校准系统 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61163737A (ja) * | 1985-01-14 | 1986-07-24 | Matsushita Electric Ind Co Ltd | 光伝送装置 |
| JPS639164A (ja) * | 1986-06-30 | 1988-01-14 | Fujitsu Ltd | Ａｐｄの増倍率制限回路 |
| DE3640242A1 (de) * | 1986-11-25 | 1988-05-26 | Vdo Schindling | Schaltungsanordnung fuer einen sensor |
| JP2733763B2 (ja) * | 1987-01-30 | 1998-03-30 | 日本電信電話株式会社 | Ａｐｄバイアス回路 |
| JPH02113640A (ja) * | 1988-10-21 | 1990-04-25 | Toshiba Corp | 自動利得制御装置 |
| JPH0314244A (ja) * | 1989-06-13 | 1991-01-22 | Toshiba Corp | 電界効果トランジスタ及びその製造方法 |
-
1991
- 1991-03-18 NL NL9100476A patent/NL9100476A/nl not_active Application Discontinuation
-
1992
- 1992-03-04 NO NO920844A patent/NO303609B1/no not_active IP Right Cessation
- 1992-03-11 EP EP92200678A patent/EP0504974B1/en not_active Expired - Lifetime
- 1992-03-11 DE DE69204508T patent/DE69204508T2/de not_active Expired - Fee Related
- 1992-03-11 JP JP4101535A patent/JP2821829B2/ja not_active Expired - Lifetime
- 1992-03-11 AT AT92200678T patent/ATE127619T1/de not_active IP Right Cessation
- 1992-03-18 FI FI921161A patent/FI104451B/sv active
Also Published As
| Publication number | Publication date |
|---|---|
| FI921161A0 (fi) | 1992-03-18 |
| NO303609B1 (no) | 1998-08-03 |
| EP0504974A1 (en) | 1992-09-23 |
| NO920844D0 (no) | 1992-03-04 |
| EP0504974B1 (en) | 1995-09-06 |
| DE69204508T2 (de) | 1996-03-14 |
| NL9100476A (nl) | 1992-10-16 |
| NO920844L (no) | 1992-09-21 |
| FI921161A (fi) | 1992-09-19 |
| DE69204508D1 (de) | 1995-10-12 |
| JP2821829B2 (ja) | 1998-11-05 |
| ATE127619T1 (de) | 1995-09-15 |
| JPH07183559A (ja) | 1995-07-21 |
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