ES8101329A1 - Procedimiento para formar una capa de oxido sobre una super-ficie principal de un cuerpo de un compuesto de los grupos iii-v que no contienen a1 - Google Patents
Procedimiento para formar una capa de oxido sobre una super-ficie principal de un cuerpo de un compuesto de los grupos iii-v que no contienen a1Info
- Publication number
- ES8101329A1 ES8101329A1 ES483560A ES483560A ES8101329A1 ES 8101329 A1 ES8101329 A1 ES 8101329A1 ES 483560 A ES483560 A ES 483560A ES 483560 A ES483560 A ES 483560A ES 8101329 A1 ES8101329 A1 ES 8101329A1
- Authority
- ES
- Spain
- Prior art keywords
- oxide layer
- compound
- forming
- group iii
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 3
- 150000001875 compounds Chemical class 0.000 title 1
- 230000001590 oxidative effect Effects 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02241—III-V semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28264—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31666—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of AIII BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/936—Graded energy gap
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PROCEDIMIENTO DE FABRICACION DE CAPAS DE OXIDO A PARTIR DE CAPAS DE COMPUESTOS DE LOS GRUPOS III-V QUE CONTIENEN A1. CONSTA DE LAS SIGUIENTES ETAPAS: 1) FORMACION DE UNA CAPA DE COMPUESTOS DE LOS GRUPOS III-V QUE CONTIENEN A1 SOBRE LA SUPERFICIE PRINCIPAL; EL CONTENIDO DE A1 CERCA DE LA SUPERFICIE PRINCIPAL ES MENOR QUE EN LA PARTE MAS ALEJADA. DICHA CAPA ES DE ALXGA1-XAS OSCILANDO X DE 0,35-0,40. 2) OXIDACION TERMICA DE LA CAPA DE CONTIENE A1 TERMINANDOSE LA OPERACION DE FORMA AUTOMATICA; ESTA OPERACION TIENE LUGAR EN PRESENCIA DE VAPOR DE AGUA Y EN UNA MEZCLA GASEOSA FLUIDA DE NITROGENO Y OXIGENO. OBTENCION DE CIRCUITOS INTEGRADOS.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/937,318 US4216036A (en) | 1978-08-28 | 1978-08-28 | Self-terminating thermal oxidation of Al-containing group III-V compound layers |
Publications (2)
Publication Number | Publication Date |
---|---|
ES8101329A1 true ES8101329A1 (es) | 1980-12-16 |
ES483560A0 ES483560A0 (es) | 1980-12-16 |
Family
ID=25469771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES483560A Granted ES483560A0 (es) | 1978-08-28 | 1979-08-22 | Procedimiento para formar una capa de oxido sobre una super-ficie principal de un cuerpo de un compuesto de los grupos iii-v que no contienen a1 |
Country Status (7)
Country | Link |
---|---|
US (1) | US4216036A (es) |
EP (1) | EP0008898B1 (es) |
JP (1) | JPS6214094B2 (es) |
CA (1) | CA1121520A (es) |
DE (1) | DE2965439D1 (es) |
ES (1) | ES483560A0 (es) |
WO (1) | WO1980000521A1 (es) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4843450A (en) * | 1986-06-16 | 1989-06-27 | International Business Machines Corporation | Compound semiconductor interface control |
US5021365A (en) * | 1986-06-16 | 1991-06-04 | International Business Machines Corporation | Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning |
EP0305144A3 (en) * | 1987-08-24 | 1989-03-08 | Canon Kabushiki Kaisha | Method of forming crystalline compound semiconductor film |
WO1991006976A2 (en) * | 1989-11-07 | 1991-05-16 | Department Of The Navy | Process for producing an aluminum oxide layer on various substrates |
US5098857A (en) * | 1989-12-22 | 1992-03-24 | International Business Machines Corp. | Method of making semi-insulating gallium arsenide by oxygen doping in metal-organic vapor phase epitaxy |
US5262360A (en) * | 1990-12-31 | 1993-11-16 | The Board Of Trustees Of The University Of Illinois | AlGaAs native oxide |
US5400354A (en) * | 1994-02-08 | 1995-03-21 | Ludowise; Michael | Laminated upper cladding structure for a light-emitting device |
KR0148599B1 (ko) * | 1994-11-15 | 1998-12-01 | 양승택 | 유전체 박막상의 무결함 화합물 반도체 박막의 제조방법 |
US5719891A (en) * | 1995-12-18 | 1998-02-17 | Picolight Incorporated | Conductive element with lateral oxidation barrier |
DE19640005A1 (de) * | 1996-09-27 | 1998-04-02 | Siemens Ag | Halbleitervorrichtung und Verfahren zu dessen Herstellung |
US5872031A (en) * | 1996-11-27 | 1999-02-16 | The Regents Of The University Of California | Enhancement-depletion logic based on gaas mosfets |
US6304588B1 (en) * | 1997-02-07 | 2001-10-16 | Xerox Corporation | Method and structure for eliminating polarization instability in laterally-oxidized VCSELs |
US5978408A (en) * | 1997-02-07 | 1999-11-02 | Xerox Corporation | Highly compact vertical cavity surface emitting lasers |
US6297538B1 (en) | 1998-03-23 | 2001-10-02 | The University Of Delaware | Metal-insulator-semiconductor field effect transistor having an oxidized aluminum nitride gate insulator formed on a gallium nitride or silicon substrate |
US6599564B1 (en) | 2000-08-09 | 2003-07-29 | The Board Of Trustees Of The University Of Illinois | Substrate independent distributed bragg reflector and formation method |
US11355652B2 (en) | 2017-09-29 | 2022-06-07 | Intel Corporation | Group III-nitride polarization junction diodes |
US11295992B2 (en) | 2017-09-29 | 2022-04-05 | Intel Corporation | Tunnel polarization junction III-N transistors |
US11437504B2 (en) | 2017-09-29 | 2022-09-06 | Intel Corporation | Complementary group III-nitride transistors with complementary polarization junctions |
WO2019066921A1 (en) | 2017-09-29 | 2019-04-04 | Intel Corporation | GROUP III NITRIDE ELECTROLUMINESCENT DEVICES COMPRISING POLARIZATION JUNCTION |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3890169A (en) * | 1973-03-26 | 1975-06-17 | Bell Telephone Labor Inc | Method of forming stable native oxide on gallium arsenide based compound semiconductors by combined drying and annealing |
US3914465A (en) * | 1972-09-25 | 1975-10-21 | Bell Telephone Labor Inc | Surface passivation of GaAs junction laser devices |
FR2217068B1 (es) * | 1973-02-13 | 1978-10-20 | Labo Electronique Physique | |
US3974002A (en) * | 1974-06-10 | 1976-08-10 | Bell Telephone Laboratories, Incorporated | MBE growth: gettering contaminants and fabricating heterostructure junction lasers |
JPS50159288A (es) * | 1974-06-11 | 1975-12-23 | ||
US3928092A (en) * | 1974-08-28 | 1975-12-23 | Bell Telephone Labor Inc | Simultaneous molecular beam deposition of monocrystalline and polycrystalline III(a)-V(a) compounds to produce semiconductor devices |
US4070205A (en) * | 1976-12-08 | 1978-01-24 | The United States Of America As Represented By The Secretary Of The Air Force | Aluminum arsenide eutectic gallium arsenide solar cell |
JPS53105177A (en) * | 1977-02-24 | 1978-09-13 | Toshiba Corp | Manufacture of semiconductor device |
US4144634A (en) * | 1977-06-28 | 1979-03-20 | Bell Telephone Laboratories, Incorporated | Fabrication of gallium arsenide MOS devices |
-
1978
- 1978-08-28 US US05/937,318 patent/US4216036A/en not_active Expired - Lifetime
-
1979
- 1979-07-31 CA CA000332873A patent/CA1121520A/en not_active Expired
- 1979-08-17 DE DE7979301680T patent/DE2965439D1/de not_active Expired
- 1979-08-17 EP EP79301680A patent/EP0008898B1/en not_active Expired
- 1979-08-21 JP JP54501461A patent/JPS6214094B2/ja not_active Expired
- 1979-08-21 WO PCT/US1979/000631 patent/WO1980000521A1/en unknown
- 1979-08-22 ES ES483560A patent/ES483560A0/es active Granted
Also Published As
Publication number | Publication date |
---|---|
US4216036A (en) | 1980-08-05 |
JPS55500604A (es) | 1980-09-04 |
CA1121520A (en) | 1982-04-06 |
EP0008898A1 (en) | 1980-03-19 |
ES483560A0 (es) | 1980-12-16 |
JPS6214094B2 (es) | 1987-03-31 |
DE2965439D1 (en) | 1983-07-07 |
WO1980000521A1 (en) | 1980-03-20 |
EP0008898B1 (en) | 1983-05-18 |
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