ES483560A0 - Procedimiento para formar una capa de oxido sobre una super-ficie principal de un cuerpo de un compuesto de los grupos iii-v que no contienen a1 - Google Patents

Procedimiento para formar una capa de oxido sobre una super-ficie principal de un cuerpo de un compuesto de los grupos iii-v que no contienen a1

Info

Publication number
ES483560A0
ES483560A0 ES483560A ES483560A ES483560A0 ES 483560 A0 ES483560 A0 ES 483560A0 ES 483560 A ES483560 A ES 483560A ES 483560 A ES483560 A ES 483560A ES 483560 A0 ES483560 A0 ES 483560A0
Authority
ES
Spain
Prior art keywords
procedure
contain
compound
forming
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES483560A
Other languages
English (en)
Other versions
ES8101329A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES483560A0 publication Critical patent/ES483560A0/es
Publication of ES8101329A1 publication Critical patent/ES8101329A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28264—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31666—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of AIII BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)
ES483560A 1978-08-28 1979-08-22 Procedimiento para formar una capa de oxido sobre una super-ficie principal de un cuerpo de un compuesto de los grupos iii-v que no contienen a1 Expired ES8101329A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/937,318 US4216036A (en) 1978-08-28 1978-08-28 Self-terminating thermal oxidation of Al-containing group III-V compound layers

Publications (2)

Publication Number Publication Date
ES483560A0 true ES483560A0 (es) 1980-12-16
ES8101329A1 ES8101329A1 (es) 1980-12-16

Family

ID=25469771

Family Applications (1)

Application Number Title Priority Date Filing Date
ES483560A Expired ES8101329A1 (es) 1978-08-28 1979-08-22 Procedimiento para formar una capa de oxido sobre una super-ficie principal de un cuerpo de un compuesto de los grupos iii-v que no contienen a1

Country Status (7)

Country Link
US (1) US4216036A (es)
EP (1) EP0008898B1 (es)
JP (1) JPS6214094B2 (es)
CA (1) CA1121520A (es)
DE (1) DE2965439D1 (es)
ES (1) ES8101329A1 (es)
WO (1) WO1980000521A1 (es)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5021365A (en) * 1986-06-16 1991-06-04 International Business Machines Corporation Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
EP0305144A3 (en) * 1987-08-24 1989-03-08 Canon Kabushiki Kaisha Method of forming crystalline compound semiconductor film
WO1991006976A2 (en) * 1989-11-07 1991-05-16 Department Of The Navy Process for producing an aluminum oxide layer on various substrates
US5098857A (en) * 1989-12-22 1992-03-24 International Business Machines Corp. Method of making semi-insulating gallium arsenide by oxygen doping in metal-organic vapor phase epitaxy
US5262360A (en) * 1990-12-31 1993-11-16 The Board Of Trustees Of The University Of Illinois AlGaAs native oxide
US5400354A (en) * 1994-02-08 1995-03-21 Ludowise; Michael Laminated upper cladding structure for a light-emitting device
KR0148599B1 (ko) * 1994-11-15 1998-12-01 양승택 유전체 박막상의 무결함 화합물 반도체 박막의 제조방법
US5719891A (en) 1995-12-18 1998-02-17 Picolight Incorporated Conductive element with lateral oxidation barrier
DE19640005A1 (de) * 1996-09-27 1998-04-02 Siemens Ag Halbleitervorrichtung und Verfahren zu dessen Herstellung
US5872031A (en) * 1996-11-27 1999-02-16 The Regents Of The University Of California Enhancement-depletion logic based on gaas mosfets
US5978408A (en) * 1997-02-07 1999-11-02 Xerox Corporation Highly compact vertical cavity surface emitting lasers
US6304588B1 (en) * 1997-02-07 2001-10-16 Xerox Corporation Method and structure for eliminating polarization instability in laterally-oxidized VCSELs
US6297538B1 (en) 1998-03-23 2001-10-02 The University Of Delaware Metal-insulator-semiconductor field effect transistor having an oxidized aluminum nitride gate insulator formed on a gallium nitride or silicon substrate
US6599564B1 (en) * 2000-08-09 2003-07-29 The Board Of Trustees Of The University Of Illinois Substrate independent distributed bragg reflector and formation method
WO2019066921A1 (en) 2017-09-29 2019-04-04 Intel Corporation GROUP III NITRIDE ELECTROLUMINESCENT DEVICES COMPRISING POLARIZATION JUNCTION
WO2019066908A1 (en) * 2017-09-29 2019-04-04 Intel Corporation GROUP III NITRIDE POLARIZATION JUNCTION DIODE
US11295992B2 (en) 2017-09-29 2022-04-05 Intel Corporation Tunnel polarization junction III-N transistors
US11437504B2 (en) 2017-09-29 2022-09-06 Intel Corporation Complementary group III-nitride transistors with complementary polarization junctions

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890169A (en) * 1973-03-26 1975-06-17 Bell Telephone Labor Inc Method of forming stable native oxide on gallium arsenide based compound semiconductors by combined drying and annealing
US3914465A (en) * 1972-09-25 1975-10-21 Bell Telephone Labor Inc Surface passivation of GaAs junction laser devices
FR2217068B1 (es) * 1973-02-13 1978-10-20 Labo Electronique Physique
US3974002A (en) * 1974-06-10 1976-08-10 Bell Telephone Laboratories, Incorporated MBE growth: gettering contaminants and fabricating heterostructure junction lasers
JPS50159288A (es) * 1974-06-11 1975-12-23
US3928092A (en) * 1974-08-28 1975-12-23 Bell Telephone Labor Inc Simultaneous molecular beam deposition of monocrystalline and polycrystalline III(a)-V(a) compounds to produce semiconductor devices
US4070205A (en) * 1976-12-08 1978-01-24 The United States Of America As Represented By The Secretary Of The Air Force Aluminum arsenide eutectic gallium arsenide solar cell
JPS53105177A (en) * 1977-02-24 1978-09-13 Toshiba Corp Manufacture of semiconductor device
US4144634A (en) * 1977-06-28 1979-03-20 Bell Telephone Laboratories, Incorporated Fabrication of gallium arsenide MOS devices

Also Published As

Publication number Publication date
WO1980000521A1 (en) 1980-03-20
DE2965439D1 (en) 1983-07-07
EP0008898B1 (en) 1983-05-18
JPS55500604A (es) 1980-09-04
CA1121520A (en) 1982-04-06
ES8101329A1 (es) 1980-12-16
EP0008898A1 (en) 1980-03-19
JPS6214094B2 (es) 1987-03-31
US4216036A (en) 1980-08-05

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